Inventor

Ichirota Nagahama

Inventor
Ibaraki, JP

Overview

30→
Patents
2003–2016
Patent span
Electricity
Primary field (CPC H)

Patents· 30 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H01Jprimary
H01JElectric discharge tubes or discharge lamps44%
G01NInvestigating or analysing materials by determining their chemical or physical properties22%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1017%
G01RMeasuring electric variables5%
G03FPhotomechanical production of textured or patterned surfaces, e.g. for printing, for processing of semiconductor devices5%
G01BMeasuring length, thickness or similar linear dimensions2%
G06TImage data processing or generation, in general2%
H01LSemiconductor devices2%
H04NPictorial communication, e.g. television2%
PatentTitleYear
9,368,314'Inspection system by charged particle beam and method of manufacturing devices using the system'20168,803,103'Inspection system by charged particle beam and method of manufacturing devices using the system'20148,611,638'Pattern inspection method and pattern inspection apparatus'20138,368,031'Inspection system by charged particle beam and method of manufacturing devices using the system'20138,124,933'Mapping-projection-type electron beam apparatus for inspecting sample by using electrons emitted from the sample'20128,067,732'Electron beam apparatus'20118,053,726'Inspection system by charged particle beam and method of manufacturing devices using the system'20118,035,082'Projection electron beam apparatus and defect inspection system using the apparatus'20117,863,580'Electron beam apparatus and an aberration correction optical apparatus'20117,847,250'Substrate inspection apparatus, substrate inspection method and method of manufacturing semiconductor device'20107,838,831'Substrate inspection apparatus, substrate inspection method and semiconductor device manufacturing method'20107,674,570'Mask pattern inspection method, exposure condition verification method, and manufacturing method of semiconductor device'20107,645,988'Substrate inspection method, method of manufacturing semiconductor device, and substrate inspection apparatus'20107,608,821'Substrate inspection apparatus, substrate inspection method and semiconductor device manufacturing method'20097,592,586'Mapping-projection-type electron beam apparatus for inspecting sample by using electrons reflected from the sample'20097,569,838'Electron beam inspection system and inspection method and method of manufacturing devices using the system'20097,462,829'Substrate inspection apparatus, substrate inspection method and method of manufacturing semiconductor device'20087,449,691'Detecting apparatus and device manufacturing method'20087,411,191'Inspection system by charged particle beam and method of manufacturing devices using the system'20087,352,195'Electron beam apparatus with detailed observation function and sample inspecting and observing method using electron beam apparatus'20087,351,969'Electron beam inspection system and inspection method and method of manufacturing devices using the system'20087,241,993'Inspection system by charged particle beam and method of manufacturing devices using the system'20077,211,796'Substrate inspection apparatus, substrate inspection method and method of manufacturing semiconductor device'20077,212,017'Electron beam apparatus with detailed observation function and sample inspecting and observing method using electron beam apparatus'20077,148,479'Defect inspection apparatus, program, and manufacturing method of semiconductor device'20067,098,457'Electron beam apparatus and device manufacturing method using same'20067,075,072'Detecting apparatus and device manufacturing method'20066,992,290'Electron beam inspection system and inspection method and method of manufacturing devices using the system'20066,909,092'Electron beam apparatus and device manufacturing method using same'20056,563,114'Substrate inspecting system using electron beam and substrate inspecting method using electron beam'2003

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

2003–2014Patents assigned to TOSHIBA KK (29)· patent assignee history
2003–2016Based in Yokohama, JP· patent location history
2005–2010Based in Ibaraki, JP· patent location history
2007–2014Based in Kanagawa, JP· patent location history
2008–2016Patents assigned to EBARA CORP (13)· patent assignee history
2008–2013Based in Koga, JP· patent location history
2011–2013Patents assigned to NAGAHAMA ICHIROTA (4)· patent assignee history
2011–2013Patents assigned to MURAKAMI TAKESHI (3)· patent assignee history
2011–2013Patents assigned to SATAKE TOHRU (3)· patent assignee history
2011Based in Tokyo, JP· patent location history

Inventor activity

Assignee and location history derived from the patent record.

Assignees
AssigneePatentsSpan
TOSHIBA KK292003–2014
EBARA CORP132008–2016
NAGAHAMA ICHIROTAself42011–2013
MURAKAMI TAKESHI32011–2013
SATAKE TOHRU32011–2013
Locations
LocationPatentsSpan
Ibaraki, JP132005–2010
Koga, JP72008–2013
Kanagawa, JP42007–2014
Yokohama, JP32003–2016
Tokyo, JP32011