Inventor
HIROTAKA IKEDA
Inventor
JP
Overview
Patents· 4 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
C30Bprimary
C30BSingle-crystal growth22%
H01LSemiconductor devices22%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1022%
H10DInorganic electric semiconductor devices17%
H10HInorganic light-emitting semiconductor devices having potential barriers11%
B28DWorking stone or stone-like materials6%
PatentTitleYear
12,571,123Gallium nitride crystal, gallium nitride substrate, and method for producing gallium nitride substrate202612,107,129Self-standing GaN substrate, GaN crystal, method for producing GaN single crystal, and method for producing semiconductor device202411,670,687Gallium nitride substrate and manufacturing method of nitride semiconductor crystal202311,664,428Self-standing GaN substrate, GaN crystal, method for producing GaN single crystal, and method for producing semiconductor device2023Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2023–2026Patents assigned to MITSUBISHI CHEM CORP (4)· patent assignee history
2023–2026Based in JP· patent location history
2026Patents assigned to JAPAN STEEL WORKS LTD (1)· patent assignee history
2026Patents assigned to UNIV TOHOKU (1)· patent assignee history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| MITSUBISHI CHEM CORP | 4 | 2023–2026 |
| JAPAN STEEL WORKS LTD | 1 | 2026 |
| UNIV TOHOKU | 1 | 2026 |
Locations
| Location | Patents | Span |
|---|---|---|
| JP | 4 | 2023–2026 |