Inventor
Seiji Sarayama
Inventor
Miyagi, JP
Overview
Patents· 37 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
C30Bprimary
C30BSingle-crystal growth34%
Y10TTechnical subjects covered by former us classification26%
H10DInorganic electric semiconductor devices10%
H10HInorganic light-emitting semiconductor devices having potential barriers6%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h106%
C09KMaterials for miscellaneous applications, not provided for elsewhere5%
H01LSemiconductor devices4%
H01SDevices using the process of light amplification by stimulated emission of radiation [laser] to amplify or generate light3%
Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests3%
C01BNon-metallic elements2%
PatentTitleYear
10,538,858Method for manufacturing group 13 nitride crystal and group 13 nitride crystal202010,100,426Method for producing gallium nitride crystal20189,869,033'Production of a GaN bulk crystal substrate and a semiconductor device formed on a GaN bulk crystal substrate'20189,863,058'Gallium nitride crystal, group 13 nitride crystal, group 13 nitride crystal substrate, and manufacturing method'20189,856,575'Crystal growth apparatus and manufacturing method of group III nitride crystal'20189,732,435'Group 13 nitride crystal and group 13 nitride crystal substrate'20179,404,196'Manufacturing method of group 13 nitride crystal'20169,376,763'Manufacturing method and manufacturing apparatus of a group III nitride crystal, utilizing a melt containing a group III metal, an alkali metal, and nitrogen'20169,365,948'Group III nitride crystal and manufacturing method thereof'20169,222,199'Crystal manufacturing apparatus'20159,163,325'Crystal growth apparatus and manufacturing method of group III nitride crystal'20159,123,863'Group 13 nitride crystal and substrate thereof'20159,096,950'Nitride crystal and method for producing the same'20158,888,912'Method of producing group III nitride crystal, apparatus for producing group III nitride crystal, and group III nitride crystal'20148,829,530'Crystal producing apparatus, crystal producing method, substrate producing method, gallium nitride crystal, and gallium nitride substrate'20148,623,138'Crystal growth apparatus'20148,591,647'Production of a GaN bulk crystal substrate and a semiconductor device formed thereon'20138,562,737'Crystal growth method, crystal growth apparatus, group-III nitride crystal and group III nitride semiconductor device'20138,475,593'Crystal preparing device, crystal preparing method, and crystal'20138,337,798'Crystal producing apparatus, crystal producing method, substrate producing method, gallium nitride crystal, and gallium nitride substrate'20128,337,617'Manufacturing method and manufacturing apparatus of a group III nitride crystal'20128,323,404'Group III nitride crystal and manufacturing method thereof'20128,129,082'Electrophotographic photoreceptor, image forming method using electrophotographic photoreceptor, image forming apparatus, and process cartridge for image forming apparatus'20128,101,020'Crystal growth apparatus and manufacturing method of group III nitride crystal'20127,981,213'Group III nitride crystal, crystal growth process and crystal growth apparatus of group III nitride'20117,828,896'Methods of growing a group III nitride crystal'20107,718,002'Crystal manufacturing apparatus'20107,531,038'Crystal growth method'20097,508,003'Production of a GaN bulk crystal substrate and a semiconductor device formed thereon'20097,462,238'Crystal growth apparatus and method of producing a crystal'20087,261,775'Methods of growing a group III nitride crystal'20077,250,640'Production of a GaN bulk crystal substrate and a semiconductor device formed on a GaN bulk crystal substrate'20077,220,311'Group III nitride crystal, crystal growth process and crystal growth apparatus of group III nitride'20077,001,457'Crystal growth method, crystal growth apparatus, group-III nitride crystal and group-III nitride semiconductor device'20066,949,140'Crystal growth method, crystal growth apparatus, group-III nitride crystal and group-III nitride semiconductor device'20056,780,239'Crystal growth method, crystal growth apparatus, group-III nitride crystal and group-III nitride semiconductor device'20046,592,663'Production of a GaN bulk crystal substrate and a semiconductor device formed on a GaN bulk crystal substrate'2003Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2003–2010Patents assigned to RICOH KK (12)· patent assignee history
2003–2020Based in Miyagi, JP· patent location history
2011–2018Patents assigned to RICOH CO LTD (24)· patent assignee history
2012–2018Patents assigned to SARAYAMA SEIJI (22)· patent assignee history
2012–2018Patents assigned to IWATA HIROKAZU (15)· patent assignee history
2012–2018Patents assigned to FUSE AKIHIRO (7)· patent assignee history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| RICOH CO LTD | 24 | 2011–2018 |
| SARAYAMA SEIJIself | 22 | 2012–2018 |
| IWATA HIROKAZU | 15 | 2012–2018 |
| RICOH KK | 12 | 2003–2010 |
| FUSE AKIHIRO | 7 | 2012–2018 |
Locations
| Location | Patents | Span |
|---|---|---|
| Miyagi, JP | 37 | 2003–2020 |