LexDanaLexDanabeta
Inventor

John W. Palmour

Inventor
Cary, NC, US

Overview

80→
Patents
1989–2021
Patent span
Electricity
Primary field (CPC H)

Patents· 80 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H10Dprimary
H10DInorganic electric semiconductor devices37%
H01LSemiconductor devices15%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1013%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1010%
Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests10%
H02MApparatus for conversion between ac and ac, between ac and dc, or between dc and dc, and for use with mains or similar power supply systems3%
H02PControl or regulation of electric motors, electric generators or dynamo-electric converters3%
H05KPrinted circuits1%
H10BElectronic memory devices1%
H10FInorganic semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation1%
PatentTitleYear
11,024,731Power module for supporting high current densities202110,950,719Seminconductor device with spreading layer202110,910,481Semiconductor device with improved insulated gate2021RE048380Vertical power transistor device202110,868,169Monolithically integrated vertical power transistor and bypass diode202010,784,338Field effect transistor devices with buried well protection regions202010,153,364Power module having a switch module for supporting high current densities201810,141,302High current, low switching loss SiC power module201810,134,834Field effect transistor devices with buried well protection regions20189,991,399Passivation structure for semiconductor devices20189,865,750'Schottky diode'20189,741,842'Vertical power transistor device'20179,673,283'Power module for supporting high current densities'20179,640,617'High performance power module'20179,570,585'Field effect transistor devices with buried well protection regions'20179,570,570'Enhanced gate dielectric for a field effect device with a trenched gate'20179,396,946'Wet chemistry processes for fabricating a semiconductor device with increased channel mobility'20169,373,617'High current, low switching loss SiC power module'20169,349,797'SiC devices with high blocking voltage terminated by a negative bevel'20169,331,197'Vertical power transistor device'20169,318,597'Layout configurations for integrating schottky contacts into a power transistor device'20169,306,061'Field effect transistor devices with protective regions'20169,269,580'Semiconductor device with increased channel mobility and dry chemistry processes for fabrication thereof'20169,240,476'Field effect transistor devices with buried well regions and epitaxial layers'20169,236,433'Semiconductor devices in SiC using vias through N-type substrate for backside contact to P-type layer'20169,231,122'Schottky diode'20169,142,662'Field effect transistor devices with low source resistance'20159,142,668'Field effect transistor devices with buried well protection regions'20159,111,919'Field effect device with enhanced gate dielectric structure'20159,029,945'Field effect transistor devices with low source resistance'20159,012,984'Field effect transistor devices with regrown p-layers'20158,680,587'Schottky diode'20148,664,665'Schottky diode employing recesses for elements of junction barrier array'20148,618,582'Edge termination structure employing recesses for edge termination elements'20138,119,539'Methods of fabricating oxide layers on silicon carbide layers utilizing atomic oxygen'20127,615,801'High voltage silicon carbide devices having bi-directional blocking capabilities'20097,572,741'Methods of fabricating oxide layers on silicon carbide layers utilizing atomic oxygen'20097,414,268'High voltage silicon carbide MOS-bipolar devices having bi-directional blocking capabilities'20087,391,057'High voltage silicon carbide devices having bi-directional blocking capabilities'20087,332,795'Dielectric passivation for semiconductor devices'20087,135,359'Manufacturing methods for large area silicon carbide devices'20067,067,361'Methods of fabricating silicon carbide metal-semiconductor field effect transistors'20066,998,322'Methods of fabricating high voltage, high temperature capacitor and interconnection structures'20066,972,436'High voltage, high temperature capacitor and interconnection structures'20056,956,238'SILICON CARBIDE POWER METAL-OXIDE SEMICONDUCTOR FIELD EFFECT TRANSISTORS HAVING A SHORTING CHANNEL AND METHODS OF FABRICATING SILICON CARBIDE METAL-OXIDE SEMICONDUCTOR FIELD EFFECT TRANSISTORS HAVING A SHORTING CHANNEL'20056,770,911'Large area silicon carbide devices'20046,767,843'Method of N2O growth of an oxide layer on a silicon carbide layer'20046,686,616'Silicon carbide metal-semiconductor field effect transistors'20046,583,454'Nitride based transistors on semi-insulating silicon carbide substrates'20036,514,779'Large area silicon carbide devices and manufacturing methods therefor'20036,486,502'Nitride based transistors on semi-insulating silicon carbide substrates'20026,344,663'Silicon carbide CMOS devices'20026,316,793'Nitride based transistors on semi-insulating silicon carbide substrates'20016,303,475'Methods of fabricating silicon carbide power devices by controlled annealing'20016,246,076'Layered dielectric on silicon carbide semiconductor structures'20016,121,633'Latch-up free power MOS-bipolar transistor'20006,107,142'Self-aligned methods of fabricating silicon carbide power devices by implantation and lateral diffusion'20006,100,169'Methods of fabricating silicon carbide power devices by controlled annealing'20006,011,279'Silicon carbide field controlled bipolar switch'20005,972,801'Process for reducing defects in oxide layers on silicon carbide'19995,963,791'Silicon carbide MOSFET having self-aligned gate structure and method of fabrication'19995,831,288'Silicon carbide metal-insulator semiconductor field effect transistor'19985,776,837'Method of obtaining high quality silicon dioxide passivation on silicon carbide and resulting passivated structures'19985,726,463'Silicon carbide MOSFET having self-aligned gate structure'19985,719,409'Silicon carbide metal-insulator semiconductor field effect transistor'19985,629,531'Method of obtaining high quality silicon dioxide passivation on silicon carbide and resulting passivated structures'19975,612,260'Method of obtaining high quality silicon dioxide passivation on silicon carbide and resulting passivated structures'19975,539,217'Silicon carbide thyristor'19965,506,421'Power MOSFET in silicon carbide'19965,465,249'Nonvolatile random access memory device having transistor and capacitor made in silicon carbide substrate'19955,459,107'Method of obtaining high quality silicon dioxide passivation on silicon carbide and resulting passivated structures'19955,409,859'Method of forming platinum ohmic contact to p-type silicon carbide'19955,323,022'Platinum ohmic contact to p-type silicon carbide'19945,270,554'High power high frequency metal-semiconductor field-effect transistor formed in silicon carbide'19935,264,713'Junction field-effect transistor formed in silicon carbide'19934,981,551'Dry etching of silicon carbide'19914,946,547'Method of preparing silicon carbide surfaces for crystal growth'19904,945,394'Bipolar junction transistor on silicon carbide'19904,875,083'Metal-insulator-semiconductor capacitor formed on silicon carbide'19894,865,685'Dry etching of silicon carbide'1989

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

1989–2006Based in Raleigh, NC, US· patent location history
1990–2000Patents assigned to CREE RESEARCH INC (17)· patent assignee history
1993–2021Based in Cary, NC, US· patent location history
2000–2021Patents assigned to CREE INC (56)· patent assignee history
2013–2017Patents assigned to RYU SEI-HYUNG (8)· patent assignee history
2013–2016Patents assigned to AGARWAL ANANT (7)· patent assignee history
2013–2017Patents assigned to PALMOUR JOHN WILLIAMS (7)· patent assignee history

Inventor activity

Assignee and location history derived from the patent record.

Assignees
AssigneePatentsSpan
CREE INC562000–2021
CREE RESEARCH INC171990–2000
RYU SEI-HYUNG82013–2017
AGARWAL ANANT72013–2016
PALMOUR JOHN WILLIAMSself72013–2017
Locations
LocationPatentsSpan
Cary, NC, US531993–2021
Raleigh, NC, US271989–2006