Inventor
Yoshishige Matsumoto
Inventor
Tokyo, JP
Overview
Patents· 7 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Pprimary
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1040%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1027%
H01SDevices using the process of light amplification by stimulated emission of radiation [laser] to amplify or generate light13%
H10DInorganic electric semiconductor devices13%
B82YSpecific uses or applications of nanostructures7%
PatentTitleYear
6,372,628'Insulating film comprising amorphous carbon fluoride, a semiconductor device comprising such an insulating film, and a method for manufacturing the semiconductor device'20026,252,261'GaN crystal film, a group III element nitride semiconductor wafer and a manufacturing process therefor'20016,180,531'Semiconductor manufacturing method'20016,091,081'Insulating film comprising amorphous carbon fluoride, a semiconductor device comprising such an insulating film'20005,866,920'Semiconductor device and manufacturing method of the same'19994,689,646'Depletion mode two-dimensional electron gas field effect transistor and the method for manufacturing the same'19874,434,491'Semiconductor laser'1984Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
1984Patents assigned to NIPPON ELECTRIC CO (1)· patent assignee history
1984–2002Based in Tokyo, JP· patent location history
1987–2002Patents assigned to NEC CORP (6)· patent assignee history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| NEC CORP | 6 | 1987–2002 |
| NIPPON ELECTRIC CO | 1 | 1984 |
Locations
| Location | Patents | Span |
|---|---|---|
| Tokyo, JP | 7 | 1984–2002 |