Inventor
HUAI LIN
Inventor
CN
Overview
Patents· 15 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
G11Cprimary
G11CStatic stores28%
H10NElectric solid-state devices not otherwise provided for21%
H10BElectronic memory devices16%
C07KPeptides7%
G01NInvestigating or analysing materials by determining their chemical or physical properties7%
G06FElectric digital data processing7%
H01FMagnets5%
G06NComputing arrangements based on specific computational models2%
G09CCiphering or deciphering apparatus for cryptographic or other purposes involving the need for secrecy2%
H03KPulse technique2%
PatentTitleYear
12,588,423Magnetoresistive device, method for changing resistance state thereof, and synapse learning module202612,524,659Neuron device based on spin orbit torque202612,525,271Multi-resistance-state spintronic device, read-write circuit, and in-memory Boolean logic operator202612,520,730Sot-driven field-free switching MRAM and array thereof202612,477,960Memristor, method of calculating hamming distance, and in-memory computing integration application202512,435,126Nanobody targeting influenza a virus nucleoprotein and application thereof, and nucleic acid encoding nanobody202512,431,175Self-reference storage structure and in-memory computing circuit202512,421,300Preparation method and application of single-chain antibody fragment targeting SARS-CoV-2 nucleocapsid protein202512,387,774Spintronic device, memory cell, memory array and read and write circuit202512,336,188Two-dimensional material-based selector with stack unit, memory unit, array, and method of operating the same202512,326,452Preparation method and application of nanobody targeting dengue virus NS1 protein202512,293,781Three-state spintronic device, memory cell, memory array and read-write circuit202512,160,529Reconfigurable PUF device based on fully electric field-controlled domain wall motion202412,154,609In-memory computing using SOT-MRAM202411,790,968Spintronic device, SOT-MRAM storage cell, storage array and in-memory computing circuit2023Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2023–2025Patents assigned to INST OF MICROELECTRONICS OF THE CHINESE ACADEMY OF SCIENCES (4)· patent assignee history
2023–2026Based in CN· patent location history
2025–2026Patents assigned to INST OF MICROELECTRONICS CAS (8)· patent assignee history
2025Patents assigned to NANJING UNIVERSITY (3)· patent assignee history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| INST OF MICROELECTRONICS CAS | 8 | 2025–2026 |
| INST OF MICROELECTRONICS OF THE CHINESE ACADEMY OF SCIENCES | 4 | 2023–2025 |
| NANJING UNIVERSITY | 3 | 2025 |
Locations
| Location | Patents | Span |
|---|---|---|
| CN | 15 | 2023–2026 |