Inventor

Carl F. Wheatley, Jr.

Inventor
Somerset, NJ, US

Overview

32→
Patents
1976–2003
Patent span
Electricity
Primary field (CPC H)

Patents· 32 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H10Dprimary
H10DInorganic electric semiconductor devices39%
H03FAmplifiers22%
G05FSystems for regulating electric or magnetic variables17%
H03KPulse technique7%
Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests7%
H03GControl of amplification5%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h102%
PatentTitleYear
6,552,391'Low voltage dual-well trench MOS device'20036,137,139'Low voltage dual-well MOS device having high ruggedness, low on-resistance, and improved body diode reverse recovery'20006,121,089'Methods of forming power semiconductor devices having merged split-well body regions therein'20005,468,668'Method of forming MOS-gated semiconductor devices having mesh geometry pattern'19955,422,288'Method of doping a JFET region in a MOS-gated semiconductor device'19955,399,892'Mesh geometry for MOS-gated semiconductor devices'19955,095,343'Power MOSFET'19925,023,692'Power MOSFET transistor circuit'19914,677,324'Fast switch-off circuit for conductivity modulated field effect transistor'19874,639,754'Vertical MOSFET with diminished bipolar effects'19874,631,564'Gate shield structure for power MOS device'19864,532,534'MOSFET with perimeter channel'19854,429,284'Operational amplifier'19844,388,634'Transistor with improved second breakdown capability'19834,364,073'Power MOSFET with an anode region'19824,313,971'Method of fabricating a Schottky barrier contact'19824,260,946'Reference voltage circuit using nested diode means'19814,254,381'Balanced-to-single-ended signal converters'19814,246,551'Multivibrator circuit'19814,216,442'Control circuit for multivibrator'19804,103,219'Shunt voltage regulator'19784,091,409'Semiconductor device having symmetrical current distribution'19784,088,941'Voltage reference circuits'19784,057,763'Current amplifiers'19774,055,811'Transistor amplifiers'19774,051,441'Transistor amplifiers'19774,045,746'Adjustable gain current amplifiers'19774,035,827'Thermally ballasted semiconductor device'19774,004,242'Apparatus for supplying symmetrically limited bidirectional signal currents'19773,983,502'Bridge-output amplifier with direct-coupled differential-mode feedback'19763,967,207'Amplifier with over-current protection'19763,936,731'Amplifier with fast recovery after input signal overswing'1976

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

1976–1987Patents assigned to RCA CORP (24)· patent assignee history
1976–1982Based in Somerset, NJ, US· patent location history
1983–2003Based in Drums, PA, US· patent location history
1986–1987Based in Dallas Township, Luzerne County, PA, US· patent location history
1987Based in Luzerne, PA, US· patent location history
1991Patents assigned to HARRIS SEMICONDUCTOR PATENTS (1)· patent assignee history
1992–1995Patents assigned to HARRIS CORP (4)· patent assignee history
2000Patents assigned to INTERSIL CORP (2)· patent assignee history
2003Patents assigned to FAIRCHILD SEMICONDUCTOR (1)· patent assignee history

Inventor activity

Assignee and location history derived from the patent record.

Assignees
AssigneePatentsSpan
RCA CORP241976–1987
HARRIS CORP41992–1995
INTERSIL CORP22000
FAIRCHILD SEMICONDUCTOR12003
HARRIS SEMICONDUCTOR PATENTS11991
Locations
LocationPatentsSpan
Somerset, New Jersey, US181976–1982
Drums, Pennsylvania, US111983–2003
Dallas Township, Luzerne County, Pennsylvania, US21986–1987
Luzerne, Pennsylvania, US11987