Inventor

Sang-Su Kim

Inventor

Yongin-si, KR

Overview

1997–2020

Patent span

Electricity

Primary field (CPC H)

Patents· 74 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H10Dprimary

H10DInorganic electric semiconductor devices32%

H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1015%

H01LSemiconductor devices14%

H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h107%

H10BElectronic memory devices6%

Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests5%

C23CCoating metallic material2%

G11CStatic stores2%

H05BElectric heating2%

H10KOrganic electric solid-state devices2%

PatentTitleYear

10,663,851Stereoscopic image display device2020 10,622,444FinFET semiconductor device with a dummy gate, first gate spacer and second gate spacer2020 10,566,331Semiconductor devices2020 10,411,129Methods of fabricating semiconductor devices2019 10,165,415Method and apparatus for geomagnetic signal processing2018 10,137,533Multi-functional apparatus for testing and etching substrate and substrate processing apparatus including the same2018 10,074,717Semiconductor devices and methods of manufacturing the same2018 9,984,925Semiconductor device and method for fabricating the same2018 9,978,835Semiconductor device including nanowire transistor2018 9,893,186'Methods of fabricating semiconductor devices'2018 9,646,891'Metal-oxide semiconductor field effect transistor, method of fabricating the same, and semiconductor apparatus including the same'2017 9,627,273'Methods of manufacturing semiconductor devices having a nanowire channel structure'2017 9,576,955'Semiconductor device having strained channel layer and method of manufacturing the same'2017 9,567,471'Ink composition and method for forming embossed pattern using the same'2017 9,515,147'Semiconductor device including nanowire transistor'2016 9,450,049'Semiconductor device and method for fabricating the same'2016 9,431,537'Semiconductor devices and methods of fabricating the same'2016 9,425,198'Semiconductor device having strain-relaxed buffer layer and method of manufacturing the same'2016 9,412,816'Semiconductor device including multiple nanowire transistor'2016 9,391,134'Fin field effect transistor, semiconductor device including the same and method of forming the semiconductor device'2016 9,324,812'Semiconductor device including nanowire transistor'2016 9,236,435'Tunneling field effect transistor'2016 9,219,064'Semiconductor devices having a nanowire channel structure'2015 9,194,035'Non-adhesive sputtering structure including a sputtering target and backing plate'2015 9,129,815'Semiconductor device'2015 9,101,826'Display device for a slot machine'2015 9,106,756'Apparatus and method for detecting proximity by proximity sensor in portable terminal'2015 9,048,460'Deposition apparatus and method for manufacturing organic light emitting display apparatus by using the same'2015 9,001,487'Ionizer'2015 8,962,360'Organic layer deposition apparatus and method of manufacturing organic light-emitting display device by using the organic layer deposition apparatus'2015 8,772,095'Method of manufacturing semiconductor device using stress memorization technique'2014 7,932,154'Method of fabricating non-volatile flash memory device having at least two different channel concentrations'2011 7,718,504'Semiconductor device having align key and method of fabricating the same'2010 7,642,140'CMOS integrated circuit devices and substrates having buried silicon germanium layers therein and method of forming same'2010 7,586,137'Non-volatile memory device and method of fabricating the same'2009 7,566,928'Byte-operational nonvolatile semiconductor memory device'2009 7,473,961'Non-volatile memory device and method of fabricating the same'2009 7,446,371'Non-volatile memory cell structure with charge trapping layers and method of fabricating the same'2008 7,394,127'Non-volatile memory device having a charge storage oxide layer and operation thereof'2008 7,371,640'Semiconductor device with floating trap type nonvolatile memory cell and method for manufacturing the same'2008 7,320,920'Non-volatile flash memory device having at least two different channel concentrations and method of fabricating the same'2008 7,250,655'MOS transistor having a T-shaped gate electrode'2007 7,195,987'Methods of forming CMOS integrated circuit devices and substrates having buried silicon germanium layers therein'2007 7,183,172'Method of forming silicon-on-insulator (SOI) semiconductor substrate and SOI semiconductor substrate formed thereby'2007 7,184,316'Non-volatile memory cell array having common drain lines and method of operating the same'2007 7,179,709'Method of fabricating non-volatile memory device having local SONOS gate structure'2007 7,170,794'Programming method of a non-volatile memory device having a charge storage layer between a gate electrode and a semiconductor substrate'2007 7,129,591'Semiconductor device having align key and method of fabricating the same'2006 7,060,563'Local SONOS-type structure having two-piece gate and self-aligned ONO and method for manufacturing the same'2006 7,045,850'Semiconductor device with floating trap type nonvolatile memory cell and method for manufacturing the same'2006 6,998,309'Method of manufacturing a non-volatile semiconductor memory device'2006 6,917,085'Semiconductor transistor using L-shaped spacer'2005 6,914,301'CMOS integrated circuit devices and substrates having buried silicon germanium layers therein and methods of forming same'2005 6,884,705'Semiconductor device having hetero grain stack gate and method of forming the same'2005 6,881,650'Method for forming SOI substrate'2005 6,881,621'Method of fabricating SOI substrate having an etch stop layer, and method of fabricating SOI integrated circuit using the same'2005 6,878,580'Semiconductor device having gate with negative slope and method for manufacturing the same'2005 6,866,721'Apparatus and method for photo-induced process'2005 6,815,764'Local SONOS-type structure having two-piece gate and self-aligned ONO and method for manufacturing the same'2004 6,815,320'Method for fabricating semiconductor device including gate spacer'2004 6,806,517'Flash memory having local SONOS structure using notched gate and manufacturing method thereof'2004 6,794,306'Semiconductor device having gate all around type transistor and method of forming the same'2004 6,750,532'CMOS semiconductor device and method of manufacturing the same'2004 6,716,689'MOS transistor having a T-shaped gate electrode and method for fabricating the same'2004 6,696,328'CMOS gate electrode using selective growth and a fabrication method thereof'2004 6,693,013'Semiconductor transistor using L-shaped spacer and method of fabricating the same'2004 6,674,235'Photocathode having ultra-thin protective layer'2004 6,670,677'SOI substrate having an etch stop layer and an SOI integrated circuit fabricated thereon'2003 6,667,525'Semiconductor device having hetero grain stack gate'2003 6,633,066'CMOS integrated circuit devices and substrates having unstrained silicon active layers'2003 6,605,847'Semiconductor device having gate all around type transistor and method of forming the same'2003 6,524,902'Method of manufacturing CMOS semiconductor device'2003 6,518,645'SOI-type semiconductor device and method of forming the same'2003 5,696,868'Apparatus and method for recording/playing back broadcasting signal'1997

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

2003–2020Patents assigned to SAMSUNG ELECTRONICS CO LTD (61)· patent assignee history

2003–2015Based in Yongin, KR· patent location history

2003–2017Based in Kyungki-do, KR· patent location history

2003–2004Based in Kumi-shi, KR· patent location history

2004–2015Based in Suwon-si, KR· patent location history

2009–2020Based in Yongin-si, KR· patent location history

2014–2017Patents assigned to KIM SANG-SU (7)· patent assignee history

2015–2018Patents assigned to SAMSUNG DISPLAY CO LTD (5)· patent assignee history

2016–2017Patents assigned to KWON TAE-YONG (4)· patent assignee history

2016Patents assigned to CHOI JUNG-DAL (2)· patent assignee history

Inventor activity

Assignee and location history derived from the patent record.

Assignees

Assignee	Patents	Span
SAMSUNG ELECTRONICS CO LTD	61	2003–2020
KIM SANG-SUself	7	2014–2017
SAMSUNG DISPLAY CO LTD	5	2015–2018
KWON TAE-YONG	4	2016–2017
CHOI JUNG-DAL	2	2016

Locations

Location	Patents	Span
Yongin-si, KR	24	2009–2020
Suwon-si, KR	19	2004–2015
Yongin, KR	11	2003–2015
Kyungki-do, KR	7	2003–2017
Kumi-shi, KR	4	2003–2004