Inventor
Alfred Grill
Inventor
White Plains, NY, US
Overview
Patents· 194 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Pprimary
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1021%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1019%
H10DInorganic electric semiconductor devices14%
Y10TTechnical subjects covered by former us classification8%
C23CCoating metallic material7%
H01LSemiconductor devices7%
B82YSpecific uses or applications of nanostructures4%
Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests4%
H10BElectronic memory devices3%
H10KOrganic electric solid-state devices2%
PatentTitleYear
11,066,748Microwave plasma and ultraviolet assisted deposition apparatus and method for material deposition using the same202110,727,114Interconnect structure including airgaps and substractively etched metal lines202010,643,890Ultrathin multilayer metal alloy liner for nano Cu interconnects202010,428,428Microwave plasma and ultraviolet assisted deposition apparatus and method for material deposition using the same20199,947,622Ultrathin superlattice of MnO/Mn/MnN and other metal oxide/metal/metal nitride liners and caps for copper low dielectric constant interconnects20189,768,288'Carbon nanostructure device fabrication utilizing protect layers'20179,698,043'Shallow trench isolation for semiconductor devices'20179,691,705'Ultrathin superlattice of MnO/Mn/MnN and other metal oxide/metal/metal nitride liners and caps for copper low dielectric constant interconnects'20179,607,825'Hydrogen-free silicon-based deposited dielectric films for nano device fabrication'20179,590,054'Low temperature spacer for advanced semiconductor devices'20179,558,935'Hydrogen-free silicon-based deposited dielectric films for nano device fabrication'20179,558,934'Hydrogen-free silicon-based deposited dielectric films for nano device fabrication'20179,536,733'Hydrogen-free silicon-based deposited dielectric films for nano device fabrication'20179,502,288'Method of forming an interconnect structure'20169,484,403'Boron rich nitride cap for total ionizing dose mitigation in SOI devices'20169,472,450'Graphene cap for copper interconnect structures'20169,472,503'Ultrathin superlattice of MnO/Mn/MnN and other metal oxide/metal/metal nitride liners and caps for copper low dielectric constant interconnects'20169,449,812'Hydrogen-free silicon-based deposited dielectric films for nano device fabrication'20169,435,031'Microwave plasma and ultraviolet assisted deposition apparatus and method for material deposition using the same'20169,431,520'Graphene nanoribbons and carbon nanotubes fabricated from SiC fins or nanowire templates'20169,397,195'Graphene nanoribbons and carbon nanotubes fabricated from SiC fins or nanowire templates'20169,337,026'Graphene growth on a carbon-containing semiconductor layer'20169,312,224'Interconnect structure containing a porous low k interconnect dielectric/dielectric cap'20169,293,557'Low temperature spacer for advanced semiconductor devices'20169,275,952'Ultrathin superlattice of MnO/Mn/MnN and other metal oxide/metal/metal nitride liners and caps for copper low dielectric constant interconnects'20169,236,250'Formation of a graphene layer on a large substrate'20169,231,063'Boron rich nitride cap for total ionizing dose mitigation in SOI devices'20169,219,037'Low k porous SiCOH dielectric and integration with post film formation treatment'20159,214,332'Composite dielectric materials with improved mechanical and electrical properties'20159,111,761'Multi component dielectric layer'20159,105,642'Interlevel dielectric stack for interconnect structures'20159,093,507'Graphene nanoribbons and carbon nanotubes fabricated from SiC fins or nanowire templates'20159,040,411'Advanced low k cap film formation process for nano electronic devices'20159,018,767'Interlevel dielectric stack for interconnect structures'20158,980,715'Multilayer dielectric structures for semiconductor nano-devices'20158,981,466'Multilayer dielectric structures for semiconductor nano-devices'20158,927,405'Accurate control of distance between suspended semiconductor nanowires and substrate surface'20158,927,968'Accurate control of distance between suspended semiconductor nanowires and substrate surface'20158,927,057'Graphene formation utilizing solid phase carbon sources'20158,895,433'Method of forming a graphene cap for copper interconnect structures'20148,877,340'Graphene growth on a non-hexagonal lattice'20148,852,342'Formation of a vicinal semiconductor-carbon alloy surface and a graphene layer thereupon'20148,841,652'Self aligned carbide source/drain FET'20148,828,762'Carbon nanostructure device fabrication utilizing protect layers'20148,779,600'Interlevel dielectric stack for interconnect structures'20148,759,824'Semiconductor structure and circuit including ordered arrangement of graphene nanoribbons, and methods of forming same'20148,680,511'Bilayer gate dielectric with low equivalent oxide thickness for graphene devices'20148,664,109'Advanced low k cap film formation process for nano electronic devices'20148,658,488'Method for forming semiconductor chip with graphene based devices in an interconnect structure of the chip'20148,659,093'Continuous metal semiconductor alloy via for interconnects'20148,658,461'Self aligned carbide source/drain FET'20148,652,950'C-rich carbon boron nitride dielectric films for use in electronic devices'20148,642,996'Graphene nanoribbons and carbon nanotubes fabricated from SiC fins or nanowire templates'20148,637,412'Process to form an adhesion layer and multiphase ultra-low k dielectric material using PECVD'20148,623,761'Method of forming a graphene cap for copper interconnect structures'20148,618,183'Materials containing voids with void size controlled on the nanometer scale'20138,541,769'Formation of a graphene layer on a large substrate'20138,536,069'Multilayered low k cap with conformal gap fill and UV stable compressive stress properties'20138,530,293'Continuous metal semiconductor alloy via for interconnects'20138,492,880'Multilayered low k cap with conformal gap fill and UV stable compressive stress properties'20138,481,423'Methods to mitigate plasma damage in organosilicate dielectrics'20138,476,743'C-rich carbon boron nitride dielectric films for use in electronic devices'20138,476,617'Graphene-containing semiconductor structures and devices on a silicon carbide substrate having a defined miscut angle'20138,470,706'Methods to mitigate plasma damage in organosilicate dielectrics'20138,440,999'Semiconductor chip with graphene based devices in an interconnect structure of the chip'20138,361,853'Graphene nanoribbons, method of fabrication and their use in electronic devices'20138,362,596'Engineered interconnect dielectric caps having compressive stress and interconnect structures containing same'20138,357,608'Multi component dielectric layer'20138,354,296'Semiconductor structure and circuit including ordered arrangement of graphene nanoribbons, and methods of forming same'20138,299,365'Self-aligned composite M-MOx/dielectric cap for Cu interconnect structures'20128,268,411'Materials containing voids with void size controlled on the nanometer scale'20128,212,337'Advanced low k cap film formation process for nano electronic devices'20128,187,955'Graphene growth on a carbon-containing semiconductor layer'20128,169,031'Continuous metal semiconductor alloy via for interconnects'20128,101,236'Method of fabricating a SiCOH dielectric material with improved toughness and improved Si-C bonding'20128,101,150'Control of carbon nanotube diameter using CVD or PECVD growth'20128,097,932'Ultra low κ plasma enhanced chemical vapor deposition processes using a single bifunctional precursor containing both a SiCOH matrix functionality and organic porogen functionality'20128,063,483'On-chip temperature gradient minimization using carbon nanotube cooling structures with variable cooling capacity'20117,915,180'SiCOH film preparation using precursors with built-in porogen functionality'20117,915,653'Structure for and method of fabricating a high-speed CMOS-compatible Ge-on-insulator photodetector'20117,892,648'SiCOH dielectric material with improved toughness and improved Si-C bonding'20117,888,741'Structures with improved interfacial strength of SiCOH dielectrics and method for preparing the same'20117,851,288'Field effect transistor using carbon based stress liner'20107,811,906'Carbon-on-insulator substrates by in-place bonding'20107,749,892'Embedded nano UV blocking and diffusion barrier for improved reliability of copper/ultra low K interlevel dielectric electronic devices'20107,745,863'Flip FERAM cell and method to form same'20107,737,052'Advanced multilayer dielectric cap with improved mechanical and electrical properties'20107,674,521'Materials containing voids with void size controlled on the nanometer scale'20107,652,288'Epitaxial and polycrystalline growth of Si1-X-YGEXCY and Si1-YCY alloy layers on Si by UHV-CVD'20107,628,974'Control of carbon nanotube diameter using CVD or PECVD growth'20097,615,482'Structure and method for porous SiCOH dielectric layers and adhesion promoting or etch stop layers having increased interfacial and mechanical strength'20097,521,377'SiCOH film preparation using precursors with built-in porogen functionality'20097,510,904'Structure for and method of fabricating a high-speed CMOS-compatible Ge-on-insulator photodetector'20097,491,658'Ultra low k plasma enhanced chemical vapor deposition processes using a single bifunctional precursor containing both a SiCOH matrix functionality and organic porogen functionality'20097,479,306'SiCOH dielectric material with improved toughness and improved Si-C bonding, semiconductor device containing the same, and method to make the same'20097,405,422'Epitaxial and polycrystalline growth of Si1-x-yGexCy and Si1-yCy alloy layers on Si by UHV-CVD'20087,402,857'Flip FERAM cell and method to form same'20087,357,977'Ultralow dielectric constant layer with controlled biaxial stress'20087,312,524'Method for fabricating an ultralow dielectric constant material as an intralevel or interlevel dielectric in a semiconductor device and electronic device made'20077,288,292'Ultra low k (ULK) SiCOH film and method'20077,282,458'Low K and ultra low K SiCOH dielectric films and methods to form the same'20077,252,875'Diffusion barrier with low dielectric constant and semiconductor device containing same'20077,217,969'Flip FERAM cell and method to form same'20077,186,573'Flip FERAM cell and method to form same'20077,183,576'Epitaxial and polycrystalline growth of Si1-x-yGexCy and Si1-yCy alloy layers on Si by UHV-CVD'20077,175,966'Water and aqueous base soluble antireflective coating/hardmask materials'20077,138,697'Structure for and method of fabricating a high-speed CMOS-compatible Ge-on-insulator photodetector'20067,098,476'Multilayer interconnect structure containing air gaps and method for making'20067,067,437'Structures with improved interfacial strength of SiCOH dielectrics and method for preparing the same'20067,049,247'Method for fabricating an ultralow dielectric constant material as an intralevel or interlevel dielectric in a semiconductor device and electronic device made'20067,038,277'Transferable device-containing layer for silicon-on-insulator applications'20067,030,468'Low k and ultra low k SiCOH dielectric films and methods to form the same'20066,972,440'Enhanced T-gate structure for modulation doped field effect transistors'20056,958,526'Electronic structures with reduced capacitance'20056,953,984'Hydrogenated oxidized silicon carbon material'20056,908,866'Epitaxial and polycrystalline growth of Si1-x-yGexCy and Si1-yCy alloy layers on Si by UHV-CVD'20056,855,649'Relaxed SiGe layers on Si or silicon-on-insulator substrates by ion implantation and thermal annealing'20056,833,332'Method for fabrication of relaxed SiGe buffer layers on silicon-on-insulators and structures containing the same'20046,815,329'Multilayer interconnect structure containing air gaps and method for making'20046,790,789'Ultralow dielectric constant material as an intralevel or interlevel dielectric in a semiconductor device and electronic device made'20046,773,982'Feram cell with internal oxygen source and method of oxygen release'20046,774,010'Transferable device-containing layer for silicon-on-insulator applications'20046,770,573'Method for fabricating an ultralow dielectric constant material'20046,768,200'Ultralow dielectric constant material as an intralevel or interlevel dielectric in a semiconductor device'20046,764,774'Structures with improved adhesion to Si and C containing dielectrics and method for preparing the same'20046,759,321'Stabilization of fluorine-containing low-k dielectrics in a metal/insulator wiring structure by ultraviolet irradiation'20046,756,323'Method for fabricating an ultralow dielectric constant material as an intralevel or interlevel dielectric in a semiconductor device'20046,750,119'Epitaxial and polycrystalline growth of Si1-x-yGexCy and Si1-yCy alloy layers on Si by UHV-CVD'20046,740,535'Enhanced T-gate structure for modulation doped field effect transistors'20046,737,725'Multilevel interconnect structure containing air gaps and method for making'20046,737,727'Electronic structures with reduced capacitance'20046,724,086'Hydrogenated oxidized silicon carbon material'20046,709,903'Relaxed SiGe layers on Si or silicon-on-insulator substrates by ion implantation and thermal annealing'20046,593,625'Relaxed SiGe layers on Si or silicon-on-insulator substrates by ion implantation and thermal annealing'20036,555,859'Flip FERAM cell and method to form same'20036,541,398'Ultralow dielectric constant material as an intralevel or interlevel dielectric in a semiconductor device and electronic device containing the same'20036,515,335'Method for fabrication of relaxed SiGe buffer layers on silicon-on-insulators and structures containing the same'20036,514,667'Tunable vapor deposited materials as antireflective coatings, hardmasks and as combined antireflective coating/hardmasks and methods of fabrication thereof and applications thereof'20036,497,963'Hydrogenated oxidized silicon carbon material'20026,479,110'Multiphase low dielectric constant material and method of deposition'20026,448,655'Stabilization of fluorine-containing low-k dielectrics in a metal/insulator wiring structure by ultraviolet irradiation'20026,448,176'Dual damascene processing for semiconductor chip interconnects'20026,441,491'Ultralow dielectric constant material as an intralevel or interlevel dielectric in a semiconductor device and electronic device containing the same'20026,437,443'Multiphase low dielectric constant material and method of deposition'20026,428,894'Tunable and removable plasma deposited antireflective coatings'20026,413,852'Method of forming multilevel interconnect structure containing air gaps including utilizing both sacrificial and placeholder material'20026,391,773'Method and materials for through-mask electroplating and selective base removal'20026,388,285'Feram cell with internal oxygen source and method of oxygen release'20026,346,747'Method for fabricating a thermally stable diamond-like carbon film as an intralevel or interlevel dielectric in a semiconductor device and device made'20026,337,518'Low dielectric constant amorphous fluorinated carbon and method of preparation'20026,333,202'Flip FERAM cell and method to form same'20016,316,167'Tunabale vapor deposited materials as antireflective coatings, hardmasks and as combined antireflective coating/hardmasks and methods of fabrication thereof and application thereof'20016,312,793'Multiphase low dielectric constant material'20016,265,779'Method and material for integration of fuorine-containing low-k dielectrics'20016,242,321'Structure and fabrication method for non-planar memory elements'20016,188,120'Method and materials for through-mask electroplating and selective base removal'20016,147,009'Hydrogenated oxidized silicon carbon material'20006,140,226'Dual damascene processing for semiconductor chip interconnects'20006,131,258'Sidewall capacitor with L-shaped dielectric'20006,049,443'Suspension bent by stressed patch'20006,030,904'Stabilization of low-k carbon-based dielectrics'20006,027,966'Isolated sidewall capacitor'20006,017,814'Structure and fabrication method for stackable, air-gap-containing low epsilon dielectric layers'20005,981,000'Method for fabricating a thermally stable diamond-like carbon film'19995,963,397'Ceramic suspension bent by stressed patch'19995,945,155'Low dielectric constant amorphous fluorinated carbon and method of preparation'19995,942,328'Low dielectric constant amorphous fluorinated carbon and method of preparation'19995,942,769'Low dielectric constant amorphous fluorinated carbon and method of preparation'19995,932,907'Method, materials, and structures for noble metal electrode contacts to silicon'19995,914,851'Isolated sidewall capacitor'19995,869,880'Structure and fabrication method for stackable, air-gap-containing low epsilon dielectric layers'19995,796,166'Tasin oxygen diffusion barrier in multilayer structures'19985,789,320'Plating of noble metal electrodes for DRAM and FRAM'19985,776,823'Tasin oxygen diffusion barrier in multilayer structures'19985,757,612'Structure and fabrication method for non-planar memory elements'19985,712,759'Sidewall capacitor with L-shaped dielectric'19985,679,269'Diamond-like carbon for use in VLSI and ULSI interconnect systems'19975,674,638'Fluorinated diamond-like carbon protective coating for magnetic recording media devices'19975,674,355'Diamond-like carbon for use in VLSI and ULSI interconnect systems'19975,663,854'Prebent ceramic suspension'19975,639,316'Thin film multi-layer oxygen diffusion barrier consisting of aluminum on refractory metal'19975,625,233'Thin film multi-layer oxygen diffusion barrier consisting of refractory metal, refractory metal aluminide, and aluminum oxide'19975,576,579'Tasin oxygen diffusion barrier in multilayer structures'19965,559,367'Diamond-like carbon for use in VLSI and ULSI interconnect systems'19965,462,784'Fluorinated diamond-like carbon protective coating for magnetic recording media devices'19955,461,536'Storage capacitors using high dielectric constant materials'19955,440,507'Diamond-like carbon write-read optical storage memory'19955,416,042'Method of fabricating storage capacitors using high dielectric constant materials'19955,302,266'Method and apparatus for filing high aspect patterns with metal'19945,294,518'Amorphous write-read optical storage memory'19945,241,131'Erosion/corrosion resistant diaphragm'19935,159,508'Magnetic head slider having a protective coating thereon'19925,155,657'High area capacitor formation using material dependent etching'19925,031,029'Copper device and use thereof with semiconductor devices'1991Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
1991–2021Patents assigned to IBM (185)· patent assignee history
1991Based in Ossining, NY, US· patent location history
1992–2021Based in White Plains, NY, US· patent location history
2010–2016Based in Yorktown Heights, NY, US· patent location history
2011–2016Patents assigned to GRILL ALFRED (39)· patent assignee history
2012–2016Patents assigned to DIMITRAKOPOULOS CHRISTOS D (15)· patent assignee history
2012–2016Patents assigned to GLOBALFOUNDRIES INC (8)· patent assignee history
2012–2016Patents assigned to NGUYEN SON VAN (8)· patent assignee history
2020Based in Armonk, NY, US· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| IBM | 185 | 1991–2021 |
| GRILL ALFREDself | 39 | 2011–2016 |
| DIMITRAKOPOULOS CHRISTOS D | 15 | 2012–2016 |
| GLOBALFOUNDRIES INC | 8 | 2012–2016 |
| NGUYEN SON VAN | 8 | 2012–2016 |
Locations
| Location | Patents | Span |
|---|---|---|
| White Plains, New York, US | 184 | 1992–2021 |
| Yorktown Heights, New York, US | 8 | 2010–2016 |
| Armonk, New York, US | 1 | 2020 |
| Ossining, New York, US | 1 | 1991 |