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Inventor

Yuefei Yang

Inventor
Torrance, CA, US

Overview

2→
Patents
2014–2016
Patent span
Electricity
Primary field (CPC H)

Patents· 2 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H10Dprimary
H10DInorganic electric semiconductor devices50%
H01LSemiconductor devices25%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1025%
PatentTitleYear
9,269,784'Gallium arsenide based device having a narrow band-gap semiconductor contact layer'20168,716,757'Monolithic HBT with wide-tuning range varactor'2014

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

2014–2016Patents assigned to GLOBAL COMM SEMICONDUCTORS INC (2)· patent assignee history
2014Patents assigned to WANG SHING-KUO (1)· patent assignee history
2014Patents assigned to YANG YUEFEI (1)· patent assignee history
2014–2016Based in Torrance, CA, US· patent location history

Inventor activity

Assignee and location history derived from the patent record.

Assignees
AssigneePatentsSpan
GLOBAL COMM SEMICONDUCTORS INC22014–2016
WANG SHING-KUO12014
YANG YUEFEIself12014
Locations
LocationPatentsSpan
Torrance, California, US22014–2016