Inventor
Hisashi Abe
Inventor
Atsugi, JP
Overview
Patents· 20 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
C23Cprimary
C23CCoating metallic material19%
H10DInorganic electric semiconductor devices17%
Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests17%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1014%
H01JElectric discharge tubes or discharge lamps10%
G02FOptical devices or arrangements for the control of light by modification of the optical properties of the media of the elements involved therein5%
H05BElectric heating3%
H10KOrganic electric solid-state devices3%
C08BPolysaccharides2%
C12PFermentation or enzyme-using processes to synthesise a desired chemical compound or composition or to separate optical isomers from a racemic mixture2%
PatentTitleYear
10,893,188Imaging apparatus having autofocus function, and focus adjustment method therefor20218,392,643'Data processing device, semiconductor integrated circuit device, and abnormality detection method'20138,304,350'Method of manufacturing a semiconductor device'20128,278,195'Plasma CVD apparatus'20128,053,338'Plasma CVD apparatus'20117,723,218'Plasma CVD apparatus'20107,691,692'Substrate processing apparatus and a manufacturing method of a thin film semiconductor device'20107,497,755'Apparatus for testing electroluminescent display'20097,452,794'Manufacturing method of a thin film semiconductor device'20087,374,938'Process for producing non-cellulosic callose fiber by plant protoplast and callose fiber'20087,271,082'Method of manufacturing a semiconductor device'20077,150,669'Electroluminescent panel and a manufacturing method therefor'20066,499,427'Plasma CVD apparatus'20026,482,752'Substrate processing apparatus and method and a manufacturing method of a thin film semiconductor device'20026,288,412'Thin film transistors for display devices having two polysilicon active layers of different thicknesses'20016,283,060'Plasma CVD apparatus'20016,281,057'Method of manufacturing a semiconductor device'20015,721,601'Display units having two insolating films and a planarizing film and process for producing the same'19985,707,882'Semiconductor device for display device using thin film transistors and process of manufacturing the same'19985,330,578'Plasma treatment apparatus'1994Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
1994–2012Patents assigned to SEMICONDUCTOR ENERGY LAB (11)· patent assignee history
1994–2013Based in Kanagawa, JP· patent location history
1998–2009Patents assigned to SANYO ELECTRIC CO (6)· patent assignee history
1998–2001Based in Gifu, JP· patent location history
2001–2012Based in Chiba, JP· patent location history
2007–2012Based in Atsugi, JP· patent location history
2012–2013Patents assigned to ABE HISASHI (3)· patent assignee history
2012Patents assigned to SAKAMA MITSUNORI (2)· patent assignee history
2012Patents assigned to YAMAZAKI SHUNPEI (2)· patent assignee history
2021Based in Tokyo, JP· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| SEMICONDUCTOR ENERGY LAB | 11 | 1994–2012 |
| SANYO ELECTRIC CO | 6 | 1998–2009 |
| ABE HISASHIself | 3 | 2012–2013 |
| SAKAMA MITSUNORI | 2 | 2012 |
| YAMAZAKI SHUNPEI | 2 | 2012 |
Locations
| Location | Patents | Span |
|---|---|---|
| Atsugi, JP | 4 | 2007–2012 |
| Chiba, JP | 4 | 2001–2012 |
| Kanagawa, JP | 3 | 1994–2013 |
| Gifu, JP | 3 | 1998–2001 |
| Tokyo, JP | 1 | 2021 |