Inventor
JUNICHI TAKINO
Inventor
JP
Overview
Patents· 11 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
C30Bprimary
C30BSingle-crystal growth37%
C23CCoating metallic material17%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1013%
H01LSemiconductor devices10%
C01BNon-metallic elements7%
H10DInorganic electric semiconductor devices7%
H01SDevices using the process of light amplification by stimulated emission of radiation [laser] to amplify or generate light3%
H10HInorganic light-emitting semiconductor devices having potential barriers3%
Y10TTechnical subjects covered by former us classification3%
PatentTitleYear
12,049,710Group-III nitride substrate202411,879,184Manufacturing apparatus for a group-III nitride crystal comprising a raw material chamber and a nurturing chamber in which a group III-element oxide gas and a nitrogen element-containing gas react to produce a group-III nitride crystal on a seed substrate202411,859,311Manufacturing method for a group-III nitride crystal that requires a flow amount of a carrier gas supplied into a raw material chamber at a temperature increase step satisfies two relational equations (I) and (II)202411,795,573Method of manufacturing group III nitride crystal by reacting an oxidizing gas containing nitrogen with a group III element droplet and growing a group III nitride crystal on a seed substrate202311,753,739Method for manufacturing a group III-nitride crystal comprising supplying a group III-element oxide gas and a nitrogen element-containng gas at a supersation ratio of greater than 1 and equal to or less than 5202311,713,516Group III nitride crystal, group III nitride substrate, and method of manufacturing group III nitride crystal202311,713,517Group-III nitride substrate202311,624,128Group III nitride crystal, group III nitride substrate, and method of manufacturing group III nitride crystal202311,396,716Group-III nitride substrate containing carbon at a surface region thereof202211,186,922Apparatus for producing Group-III nitride semiconductor crystal including nitrogen source nozzles with different spray directions202111,155,931Method for manufacturing a group III-nitride crystal comprising supplying a group III-element oxide gas and a nitrogen element-containing gas at a supersaturation ratio of greater than 1 and equal to or less than 52021Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2021–2023Patents assigned to PANASONIC CORP (7)· patent assignee history
2021–2023Patents assigned to UNIV OSAKA (4)· patent assignee history
2021–2024Based in JP· patent location history
2022–2024Patents assigned to PANASONIC HOLDINGS CORP (9)· patent assignee history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| PANASONIC HOLDINGS CORP | 9 | 2022–2024 |
| PANASONIC CORP | 7 | 2021–2023 |
| UNIV OSAKA | 4 | 2021–2023 |
Locations
| Location | Patents | Span |
|---|---|---|
| JP | 11 | 2021–2024 |