Inventor

Guo-Qiang Lo

Inventor
Singapore, SG

Overview

36→
Patents
1998–2018
Patent span
Electricity
Primary field (CPC H)

Patents· 36 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H10Dprimary
H10DInorganic electric semiconductor devices20%
G02BOptical elements, systems or apparatus14%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1012%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h109%
G01NInvestigating or analysing materials by determining their chemical or physical properties6%
G02FOptical devices or arrangements for the control of light by modification of the optical properties of the media of the elements involved therein6%
H01LSemiconductor devices6%
Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests5%
H10FInorganic semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation3%
H10NElectric solid-state devices not otherwise provided for3%
PatentTitleYear
10,048,453Optical alignment structure and method of determining alignment information20189,959,927Multi-step voltage for forming resistive access memory (RRAM) cell filament20189,880,404'Optical waveguide device and method of manufacturing the same'20189,666,736'Photodetector arrangement'20179,581,545'Optical sensing system and method of determining a change in a refractive index in an optical sensing system'20179,335,263'Optical circuit for sensing a biological entity in a fluid and method of configuring the same'20169,134,553'Optical modulator and method for manufacturing the same'20159,110,314'Optical modulator and a method of forming the same'20159,087,975'Resistive memory arrangement and a method of forming the same'20159,087,936'Semiconductor photomultiplier device'20159,046,494'Optical sensing system and a method of determining a change in an effective refractive index of a resonator of an optical sensing system'20159,002,163'Optical converter and method of manufacturing the same'20158,538,214'Optical resonator and optical sensing system comprising the same'20138,404,133'Manufacturing method of planar optical waveguide device with grating structure'20138,362,494'Electro-optic device with novel insulating structure and a method for manufacturing the same'20138,319,302'Wafer arrangement and a method for manufacturing the wafer arrangement'20128,227,178'Manufacturing method of planar optical waveguide device with grating structure'20127,400,026'Thin film resistor structure'20087,375,392'Gate structures having sidewall spacers formed using selective deposition'20087,214,990'Memory cell with reduced soft error rate'20077,176,104'Method for forming shallow trench isolation structure with deep oxide region'20077,163,881'Method for forming CMOS structure with void-free dielectric film'20077,129,149'Method for forming shallow trench isolation structure with anti-reflective liner'20067,125,783'Dielectric anti-reflective coating surface treatment to prevent defect generation in associated wet clean'20067,078,306'Method for forming a thin film resistor structure'20067,015,116'Stress-relieved shallow trench isolation (STI) structure and method for forming the same'20066,872,668'Multi-step tungsten etchback process to preserve barrier integrity in an integrated circuit structure'20056,806,154'Method for forming a salicided MOSFET structure with tunable oxynitride spacer'20046,791,155'Stress-relieved shallow trench isolation (STI) structure and method for forming the same'20046,740,549'Gate structures having sidewall spacers using selective deposition and method of forming the same'20046,627,543'Low-temperature sputtering system and method for salicide process'20036,566,236'Gate structures with increased etch margin for self-aligned contact and the method of forming the same'20036,407,008'Method of forming an oxide layer'20026,281,102'Cobalt silicide structure for improving gate oxide integrity and method for fabricating same'20016,093,589'Methods for preventing gate oxide degradation'20005,767,558'Structures for preventing gate oxide degradation'1998

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

1998–2008Patents assigned to INTEGRATED DEVICE TECH (19)· patent assignee history
1998–2004Based in San Jose, CA, US· patent location history
2001–2008Based in Portland, OR, US· patent location history
2007–2018Based in Singapore, SG· patent location history
2012–2018Patents assigned to AGENCY SCIENCE TECH & RES (17)· patent assignee history
2012–2015Patents assigned to YU MINGBIN (7)· patent assignee history
2015Patents assigned to LO GUO QIANG PATRICK (4)· patent assignee history
2015Patents assigned to FANG QING (3)· patent assignee history
2018Based in Park Mall, SG· patent location history

Inventor activity

Assignee and location history derived from the patent record.

Assignees
AssigneePatentsSpan
INTEGRATED DEVICE TECH191998–2008
AGENCY SCIENCE TECH & RES172012–2018
YU MINGBIN72012–2015
LO GUO QIANG PATRICKself42015
FANG QING32015
Locations
LocationPatentsSpan
Singapore, SG182007–2018
Portland, OR, US142001–2008
San Jose, California, US31998–2004
Park Mall, SG12018