Inventor
Jean-Francois Damlencourt
Inventor
Laval, FR
Overview
Patents· 15 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Dprimary
H10DInorganic electric semiconductor devices27%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1024%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1014%
B82YSpecific uses or applications of nanostructures11%
H01MProcesses or means, e.g. batteries, for the direct conversion of chemical energy into electrical energy5%
Y02EReduction of greenhouse gas [ghg] emissions, related to energy generation, transmission or distribution5%
Y02PClimate change mitigation technologies in the production or processing of goods5%
C23CCoating metallic material3%
H01LSemiconductor devices3%
Y10TTechnical subjects covered by former us classification3%
PatentTitleYear
10,622,640Current collector with integrated leak-proofing means, bipolar battery comprising such a collector20209,991,548Bipolar li-ion battery with improved leaktightness and associated method of production20189,040,391'Process for producing localised GeOI structures, obtained by germanium condensation'20158,513,125'Manufacturing a microelectronic device comprising silicon and germanium nanowires integrated on a same substrate'20138,349,667'Method for stabilizing germanium nanowires obtained by condensation'20138,247,313'Method for preparing a germanium layer from a silicon-germanium-on-isolator substrate'20127,989,327'Manufacturing method for a semi-conductor on insulator substrate comprising a localised Ge enriched step'20117,972,971'Method for producing Si1-yGey based zones with different contents in Ge on a same substrate by condensation of germanium'20117,759,175'Fabrication method of a mixed substrate and use of the substrate for producing circuits'20107,648,893'Method for manufacturing a semiconductor-on-insulator substrate for microelectronics and optoelectronics'20107,601,570'Method for producing a device comprising a structure equipped with one or more microwires or nanowires based on a Si and Ge compound by germanium condensation'20097,598,145'Method for producing Si1-yGey based zones with different contents in Ge on a same substrate by condensation of germanium'20097,494,831'Process for making stacks of islands made of one semiconducting material encapsulated in another semiconducting material'20097,427,779'Microstructure for formation of a silicon and germanium on insulator substrate of Si1-XGeX type'20087,030,043'Process for deposition of a thin layer on an oxidized layer of a substrate'2006Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2006–2020Patents assigned to COMMISSARIAT ENERGIE ATOMIQUE (15)· patent assignee history
2006Based in Saint-Egreve, FR· patent location history
2008–2010Based in Saint Martin, FR· patent location history
2009–2011Patents assigned to ST MICROELECTRONICS SA (2)· patent assignee history
2009–2020Based in Laval, FR· patent location history
2009Based in Saint Egreve, FR· patent location history
2012–2013Patents assigned to DAMLENCOURT JEAN-FRANCOIS (3)· patent assignee history
2012–2015Patents assigned to VINCENT BENJAMIN (2)· patent assignee history
2013Patents assigned to SARACCO EMELINE (2)· patent assignee history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| COMMISSARIAT ENERGIE ATOMIQUE | 15 | 2006–2020 |
| DAMLENCOURT JEAN-FRANCOISself | 3 | 2012–2013 |
| SARACCO EMELINE | 2 | 2013 |
| ST MICROELECTRONICS SA | 2 | 2009–2011 |
| VINCENT BENJAMIN | 2 | 2012–2015 |
Locations
| Location | Patents | Span |
|---|---|---|
| Laval, FR | 11 | 2009–2020 |
| Saint Martin, FR | 2 | 2008–2010 |
| Saint Egreve, FR | 1 | 2009 |
| Saint-Egreve, FR | 1 | 2006 |