LexDanaLexDanabeta
Inventor

Takao Nakamura

Inventor
Osaka, JP

Overview

168→
Patents
1976–2020
Patent span
Electricity
Primary field (CPC H)

Patents· 168 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H10Nprimary
H10NElectric solid-state devices not otherwise provided for15%
Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests15%
H10HInorganic light-emitting semiconductor devices having potential barriers8%
B82YSpecific uses or applications of nanostructures8%
H01SDevices using the process of light amplification by stimulated emission of radiation [laser] to amplify or generate light7%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h106%
H04NPictorial communication, e.g. television5%
G06TImage data processing or generation, in general4%
G11BInformation storage based on relative movement between record carrier and transducer3%
Y10TTechnical subjects covered by former us classification3%
PatentTitleYear
10,837,544Axle assembly202010,333,270Optical module and method for manufacturing the optical module201910,199,795Optical module and method for manufacturing the optical module20199,806,494'Optical module and method for manufacturing the optical module'20179,568,795'Liquid crystal display device'2017D0765612'Light source module'20169,379,523'Group III nitride semiconductor device, p-type contact structure, and method for fabricating group III nitride semiconductor device'20169,266,692'Conveying apparatus and recording apparatus with movable drive roller and movable pinch roller'2016D0744670'Light source module'2015D0744671'Light source module'20159,170,463'Liquid crystal display device'20159,004,673'Conveyance controller, printing apparatus, method of conveying printing medium, and printing medium conveyance apparatus'20158,917,750'III-nitride semiconductor laser diode'20148,908,732'Group-III nitride semiconductor laser device'20148,815,621'Method of forming p-type gallium nitride based semiconductor, method of forming nitride semiconductor device, and method of forming epitaxial wafer'20148,741,674'Group-III nitride semiconductor laser device, and method for fabricating group-III nitride semiconductor laser device'20148,693,515'Group-III nitride semiconductor laser device, and method for fabricating group-III nitride semiconductor laser device'20148,620,018'Electronic watermark embedding method, device, and program, and electronic watermark detecting method, device, and program'20138,605,939'Electronic watermark embedding method, device, and program, and electronic watermark detecting method, device, and program'20138,561,400'Hydraulic circuit of injection cylinder in die-casting apparatus'20138,563,982'Liquid crystal display device'20138,546,163'Group-III nitride semiconductor laser device, and method for fabricating group-III nitride semiconductor laser device'20138,541,253'III-nitride semiconductor laser device, and method of fabricating the III-nitride semiconductor laser device'20138,513,645'Gallium nitride-based epitaxial wafer and method of producing gallium nitride-based semiconductor light-emitting device'20138,487,327'Group-III nitride semiconductor device, epitaxial substrate, and method of fabricating group-III nitride semiconductor device'20138,483,251'Group III nitride semiconductor laser diode, and method for producing group III nitride semiconductor laser diode'20138,476,615'GaN-based semiconductor light emitting device and the method for making the same'20138,420,426'Method of manufacturing a light-emitting device'20138,362,521'III nitride semiconductor crystal, III nitride semiconductor device, and light emitting device'20138,351,440'Relay device, communication system, communication method, and computer program'20138,304,269'Method of fabricating group III nitride semiconductor device'20128,306,082'Group-III nitride semiconductor laser device, and method of fabricating group-III nitride semiconductor laser device'20128,304,793'III-nitride semiconductor optical device and epitaxial substrate'20128,227,277'Group-III nitride semiconductor laser device, and method of fabricating group-III nitride semiconductor laser device'20128,207,544'Group-III nitride semiconductor device, epitaxial substrate, and method of fabricating group-III nitride semiconductor device'20128,208,683'Digital watermark embedding method, apparatus and storage medium for reducing image quality deterioration and increasing detection reliability'20128,207,556'Group III nitride semiconductor device and epitaxial substrate'20128,183,071'Method for producing nitride semiconductor optical device and epitaxial wafer'20128,126,202'Digital watermark padding method, digital watermark padding device, digital watermark detecting method, digital watermark detecting device, and program'20128,067,257'Nitride based semiconductor optical device, epitaxial wafer for nitride based semiconductor optical device, and method of fabricating semiconductor light-emitting device'20118,053,806'Group III nitride semiconductor device and epitaxial substrate'20118,018,029'Gallium nitride-based epitaxial wafer and method of fabricating epitaxial wafer'20117,978,877'Digital watermark embedding method, digital watermark embedding apparatus, and storage medium storing a digital watermark embedding program'20117,970,164'Digital watermark padding method, digital watermark padding device, digital watermark detecting method, digital watermark detecting device, and program'20117,943,943'Light-emitting device and manufacturing method thereof'20117,933,303'Group-III nitride semiconductor laser device, and method for fabricating group-III nitride semiconductor laser device'20117,879,636'Method of forming p-type gallium nitride based semiconductor, method of forming nitride semiconductor device, and method of forming epitaxial wafer'20117,860,270'Digital watermark embedding method, digital watermark embedding apparatus, and storage medium storing a digital watermark embedding program'20107,858,963'Nitride based semiconductor optical device, epitaxial wafer for nitride based semiconductor optical device, and method of fabricating semiconductor light-emitting device'20107,859,007'Light-emitting device and manufacturing method thereof'20107,851,821'Group III nitride semiconductor device, epitaxial substrate, and method of fabricating group III nitride semiconductor device'20107,851,243'Nitride based semiconductor optical device, epitaxial wafer for nitride based semiconductor optical device, and method of fabricating semiconductor light-emitting device'20107,817,818'Digital watermark embedding method, digital watermark embedding apparatus, and storage medium storing a digital watermark embedding program'20107,792,323'Digital watermark embedding method, digital watermark embedding apparatus, and storage medium storing a digital watermark embedding program'20107,732,236'III nitride semiconductor crystal and manufacturing method thereof, III nitride semiconductor device manufacturing method thereof, and light emitting device'20107,687,822'Light emitting apparatus'20107,672,474'Electronic watermark embedding device, electronic watermark detection device, method thereof, and program'20107,640,431'Method and apparatus for digital watermarking'20097,555,195'Content combination reproducer, content combination reproduction method, program executing the method, and recording medium recording therein the program'20097,508,011'Semiconductor light generating device'20097,489,796'Electronic watermark embedding device, electronic watermark detection device, method thereof, and program'20097,482,934'Communication device and communication method'20097,388,228'Display device and method of manufacturing the same'20087,294,867'Semiconductor light generating device'20077,202,509'Light emitting apparatus'20077,190,004'Light emitting device'20077,164,778'Digital watermark embedding method, digital watermark embedding apparatus, and storage medium storing a digital watermark embedding program'20077,147,289'Wheel cover for automotive vehicles'20067,072,492'Method and apparatus for digital watermarking'20067,042,016'Semiconductor optical device, method of forming contact in semiconductor optical device'20066,956,251'On-p-GaAs substrate Zn1−xMgxSySe1−y pin photodiode and on-p-GaAs substrate Zn1−xMgxSySe1−y avalanche photodiode'20056,945,528'Sheet feeding apparatus and image forming apparatus'20056,936,847'Display device with an improved contact hole arrangement for contacting a semiconductor layer through an insulation film'20056,876,003'Semiconductor light-emitting device, method of manufacturing transparent conductor film and method of manufacturing compound semiconductor light-emitting device'20056,872,649'Method of manufacturing transparent conductor film and compound semiconductor light-emitting device with the film'20056,871,946'Recording apparatus'20056,861,681'On-p-GaAs substrate Zn1-xMgxSySe1-y pin photodiode and on-p-GaAs substrate Zn1-xMgxSySe1-y avalanche photodiode'20056,815,316'Apparatus for fabricating compound semiconductor device'20046,793,216'Sheet material conveying device and image forming apparatus provided with such device'20046,724,018'Zn1-xMgxSySe1-y pin-photodiode and Zn1-xMgxSySe1-y avalanche-photodiode'20046,704,431'Method and apparatus for digital watermarking'20046,693,728'Recording apparatus'20046,624,443'Display device with an improved contact hole arrangement for contacting a semiconductor layer through an insulation film'20036,605,890'Color cathode ray tube having an improved shadow mask'20036,528,395'Method of fabricating compound semiconductor device and apparatus for fabricating compound semiconductor device'20036,524,643'Method for preparing layered structure including oxide superconductor thin film'20036,222,311'Narrow-neck CRT having a large stem pin circle'20016,194,353'Process for preparing superconducting thin film formed of oxide superconductor material'20016,185,312'Method for embedding and reading watermark-information in digital form, and apparatus thereof'20016,172,008'Process for preparing high crystallinity oxide thin film'20016,078,134'Narrow-neck CRT having a large stem pin circle'20006,020,596'Superconducting device including an isolation layer'20005,994,830'Narrow-neck CRT having a large stem pin circle'19995,985,402'Magnetic disk and its manufacturing method'19995,898,264'Narrow-neck CRT having a large stem pin circle'19995,861,361'Superconducting field effect device having a superconducting channel and method for manufacturing the same'19995,856,275'Superconducting wiring lines and process for fabricating the same'19995,854,493'Superconduting device having an extremely short superconducting channel formed of oxide superconductor material and method for manufacturing the same'19985,825,591'Frictionally sliding head magnet disk apparatus'19985,817,531'Superconducting device having a superconducting channel formed of oxide superconductor material and method for manufacturing the same'19985,811,375'Superconducting multilayer interconnection formed of oxide superconductor material and method for manufacturing the same'19985,789,346'Method for manufacturing an oxide superconductor device'19985,773,843'Metal electrode for superconducting current path formed of oxide superconductor material and superconducting device utilizing thereof'19985,739,084'Method for manufacturing a superconducting device having a reduced thickness of oxide superconducting layer'19985,737,159'Magnetic disk and its manufacturing method'19985,721,196'Stacked tunneling and stepped grain boundary Josephson junction'19985,717,222'Superconducting device having an extremely thin superconducting channel formed of oxide superconductor material and method for manufacturing the same'19985,714,767'Method for manufacturing superconducting device having a reduced thickness of oxide superconducting layer and superconducting device manufactured thereby'19985,683,968'Method for manufacturing a superconducting device'19975,680,285'Magnetic disk having improved surface configuration and magnetic disk unit including same'19975,678,744'Method for cutting a hard to cut wafer'19975,674,813'Process for preparing layered structure including oxide super conductor thin film'19975,672,569'Process for fabricating a superconducting circuit'19975,646,096'Process for fabrication superconducting wiring lines'19975,642,114'Variable length code decoder using a content addressable memory with match inhibiting gate'19975,637,555'Method for manufacturing a three-terminal superconducting device having an extremely short superconducting channel'19975,632,042'Data flow processor and data flow process changing system'19975,629,268'Process for preparing a layered superconducting structure'19975,622,918'Process and apparatus for preparing YBaCuO superconducting films'19975,621,223'Superconducting device having a reduced thickness of oxide superconducting layer and method for manufacturing the same'19975,607,900'Process for cleaning a surface of thin film of oxide superconductor'19975,594,257'Superconducting device having a superconducting channel formed of oxide superconductor material and method for manufacturing the same'19975,556,472'Film deposition apparatus'19965,549,211'Method of producing magnetic disk'19965,547,923'Method for manufacturing superconducting device having a reduced thickness of oxide superconducting layer'19965,545,611'Oxide superconductor thin film prepared by MBE'19965,543,386'Joint device including superconductive probe-heads for capacitive microwave coupling'19965,539,215'Superconducting device having an extremely thin superconducting channel formed of oxide superconductor material'19965,534,491'Process for preparing a layered structure containing at least one thin film of oxide superconductor'19965,514,877'Superconducting device and a method for manufacturing the same'19965,511,215'Debugging system for the loading and execution of data flow programs'19965,510,324'Method for manufacturing a superconducting device having an extremely thin superconducting channel'19965,509,183'Method for manufacturing a superconducting device having an extremely thin superconducting channel formed of oxide superconductor material'19965,506,197'Superconducting device having an extremely thin superconducting channel formed of oxide superconductor material'19965,499,347'System having multiple data flow processors and switching unit for selectively supplying packets containing data from packet transmitter to any selected data flow processor'19965,494,891'Method for manufacturing three-terminal oxide superconducting devices'19965,473,194'Chip carrier having through hole conductors'19955,471,069'Superconducting device having an extremely short superconducting channel formed of extremely thin oxide superconductor film'19955,466,664'Method for manufacturing a superconducting device having a thin superconducting channel formed of oxide superconductor material'19955,462,918'Superconducting field effect device with vertical channel formed of oxide superconductor material'19955,452,464'Data driven type information processing apparatus capable of processing untagged data having no tag information'19955,447,907'Superconducting device with c-axis channel and a-axis source and drain having a continuous crystal structure'19955,446,016'Method for forming a patterned oxide superconductor thin film'19955,446,015'Superconducting device having a reduced thickness of oxide superconducting layer'19955,434,127'Method for manufacturing superconducting device having a reduced thickness of oxide superconducting layer'19955,430,012'Superconducting multilayer interconnection formed of a-axis and c-axis oriented oxide superconductor materials'19955,423,914'Film depositing apparatus and process for preparing layered structure including oxide superconductor thin film'19955,422,490'Focused ion beam implantation apparatus'19955,416,072'Superconducting device having an thin superconducting channel formed of oxide superconducting material'19955,408,108'Superconducting device having an extremely thin superconducting channel formed of oxide superconductor material'19955,407,903'Superconducting device having a reduced thickness of oxide superconducting layer'19955,403,819'MBE method for preparing high Tc superconducting thin films'19955,399,546'Superconducting device having an extremely thin superconducting channel formed of oxide superconductor material'19955,388,020'Magnetic disk having improved surface configuration and magnetic disk unit including same'19955,364,655'Simultaneous double sides polishing method'19945,353,182'Magnetic disk unit having magnetic disks and a magnetic head with a head slider which is in contact with surfaces of the magnetic disk'19945,322,526'Method for manufacturing a superconducting device having an extremely thin superconducting channel formed of oxide superconductor material'19945,321,177'Process for the vapor-phase thermal cracking of dicyclopentadiene and a process for the manufacture of high purity dicyclopentadiene'19945,236,896'Superconducting device having an extremely thin superconducting channel formed of oxide superconductor material'19935,202,810'Magnetic disk having an improved surface configuration'19935,011,717'Explosion preventing porcelain hollow insulator'19915,010,510'Multiplying unit circuit'19914,982,355'Low-power parallel multiplier'19914,943,122'Center hub cap for vehicle wheels'19904,842,917'Magnetic recording medium and process for producing the same'19894,430,387'Base plate for magnetic recording disc'19844,177,307'Thermal shock resistant ceramic honeycomb structures'19793,938,724'Method of making butt welded tubes'1976

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

1976–2012Based in Yokohama, JP· patent location history
1984–2008Patents assigned to HITACHI LTD (20)· patent assignee history
1991–2020Based in Tokyo, JP· patent location history
1993–2019Patents assigned to SUMITOMO ELECTRIC INDUSTRIES (104)· patent assignee history
1993–2013Based in Osaka, JP· patent location history
1999–2017Based in Mobara, JP· patent location history
2001–2013Patents assigned to NIPPON TELEGRAPH & TELEPHONE (17)· patent assignee history
2007–2019Based in Itami, JP· patent location history
2011–2016Patents assigned to NAKAMURA TAKAO (29)· patent assignee history
2011–2014Patents assigned to UENO MASAKI (18)· patent assignee history

Inventor activity

Assignee and location history derived from the patent record.

Assignees
AssigneePatentsSpan
SUMITOMO ELECTRIC INDUSTRIES1041993–2019
NAKAMURA TAKAOself292011–2016
HITACHI LTD201984–2008
UENO MASAKI182011–2014
NIPPON TELEGRAPH & TELEPHONE172001–2013
Locations
LocationPatentsSpan
Osaka, JP631993–2013
Itami, JP432007–2019
Yokohama, JP281976–2012
Mobara, JP101999–2017
Tokyo, JP51991–2020