Inventor
John F. Kaeding
Inventor
Boise, ID, US
Overview
Patents· 19 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Pprimary
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1023%
H01LSemiconductor devices12%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1012%
C30BSingle-crystal growth11%
H10HInorganic light-emitting semiconductor devices having potential barriers11%
H10DInorganic electric semiconductor devices9%
H01SDevices using the process of light amplification by stimulated emission of radiation [laser] to amplify or generate light5%
H10FInorganic semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation5%
B82YSpecific uses or applications of nanostructures3%
H01QAntennas, i.e. radio aerials3%
PatentTitleYear
11,114,383Semiconductor devices having integrated optical components202111,018,098Fabricated two-sided millimeter wave antenna using through-silicon-vias202110,593,568Thrumold post package with reverse build up hybrid additive structure202010,586,780Semiconductor device modules including a die electrically connected to posts and related methods202010,566,686Stacked memory package incorporating millimeter wave antenna in die stack202010,325,874Device module having a plurality of dies electrically connected by posts201910,192,843Methods of making semiconductor device modules with increased yield201910,103,038Thrumold post package with reverse build up hybrid additive structure20188,709,925'Method for conductivity control of (Al,In,Ga,B)N'20148,643,036'Semiconductor light-emitting device'20148,405,128'Method for enhancing growth of semipolar (Al,In,Ga,B)N via metalorganic chemical vapor deposition'20138,368,179'Miscut semipolar optoelectronic device'20138,227,820'Semiconductor light-emitting device'20128,203,159'Method for growth of semipolar (Al,In,Ga,B)N optoelectronic devices'20128,193,079'Method for conductivity control of (Al,In,Ga,B)N'20128,110,482'Miscut semipolar optoelectronic device'20127,858,996'Method for growth of semipolar (Al,In,Ga,B)N optoelectronic devices'20107,691,658'Method for improved growth of semipolar (Al,In,Ga,B)N'20107,687,293'Method for enhancing growth of semipolar (Al,In,Ga,B)N via metalorganic chemical vapor deposition'2010Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2010–2014Patents assigned to UNIV CALIFORNIA (11)· patent assignee history
2010–2014Based in Mountain View, CA, US· patent location history
2010–2014Based in Goleta, CA, US· patent location history
2012–2014Patents assigned to NAKAMURA SHUJI (8)· patent assignee history
2012–2014Patents assigned to DENBAARS STEVEN P (6)· patent assignee history
2012–2014Patents assigned to KAEDING JOHN F (6)· patent assignee history
2018–2021Patents assigned to MICRON TECHNOLOGY INC (8)· patent assignee history
2018–2021Based in Boise, ID, US· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| UNIV CALIFORNIA | 11 | 2010–2014 |
| MICRON TECHNOLOGY INC | 8 | 2018–2021 |
| NAKAMURA SHUJI | 8 | 2012–2014 |
| DENBAARS STEVEN P | 6 | 2012–2014 |
| KAEDING JOHN Fself | 6 | 2012–2014 |
Locations
| Location | Patents | Span |
|---|---|---|
| Boise, ID, US | 8 | 2018–2021 |
| Mountain View, California, US | 8 | 2010–2014 |
| Goleta, California, US | 3 | 2010–2014 |