Inventor
Nadim F. Haddad
Inventor
Oakton, VA, US
Overview
Patents· 15 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Dprimary
H10DInorganic electric semiconductor devices20%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1020%
G11CStatic stores16%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1012%
Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests12%
G06QInformation and communication technology [ict] specially adapted for administrative, commercial, financial, managerial or supervisory purposes4%
H01GCapacitors4%
H01LSemiconductor devices4%
H03KPulse technique4%
Y10TTechnical subjects covered by former us classification4%
PatentTitleYear
9,027,226'Method for implementing prompt dose mitigating capacitor'20158,389,370'Radiation-tolerant integrated circuit device and method for fabricating'20138,036,023'Single-event upset immune static random access memory cell circuit'20117,965,541'Non-volatile single-event upset tolerant latch circuit'20117,876,602'Single-event upset immune static random access memory cell circuit, system, and method'20117,269,057'Method for connecting circuit elements within an integrated circuit for reducing single-event upsets'20076,762,128'Apparatus and method for manufacturing a semiconductor circuit'20046,717,233'Method for fabricating resistors within semiconductor integrated circuit devices'20046,716,728'Radiation hardened silicon-on-insulator (SOI) transistor having a body contact'20046,448,862'Single event upset immune oscillator circuit'20026,441,440'Semiconductor device and circuit having low tolerance to ionizing radiation'20026,399,989'Radiation hardened silicon-on-insulator (SOI) transistor having a body contact'20025,527,724'Method to prevent latch-up and improve breakdown volatge in SOI mosfets'19965,360,752'Method to radiation harden the buried oxide in silicon-on-insulator structures'19945,314,841'Method of forming a frontside contact to the silicon substrate of a SOI wafer'1994Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
1994–1996Patents assigned to LORAL FEDERAL SYSTEMS COMPANY (2)· patent assignee history
1994–2015Based in Oakton, VA, US· patent location history
2002–2011Patents assigned to BAE SYSTEMS INFORMATION (9)· patent assignee history
2011–2015Patents assigned to BAE SYS INF & ELECT SYS INTEG (2)· patent assignee history
2013Patents assigned to BRADY FREDERICK (1)· patent assignee history
2013Patents assigned to HADDAD NADIM (1)· patent assignee history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| BAE SYSTEMS INFORMATION | 9 | 2002–2011 |
| BAE SYS INF & ELECT SYS INTEG | 2 | 2011–2015 |
| LORAL FEDERAL SYSTEMS COMPANY | 2 | 1994–1996 |
| BRADY FREDERICK | 1 | 2013 |
| HADDAD NADIMself | 1 | 2013 |
Locations
| Location | Patents | Span |
|---|---|---|
| Oakton, Virginia, US | 15 | 1994–2015 |