Inventor
Chan-Jin Park
Inventor
Yongin-si, KR
Overview
Patents· 14 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Bprimary
H10BElectronic memory devices26%
H10NElectric solid-state devices not otherwise provided for16%
H10DInorganic electric semiconductor devices13%
H01LSemiconductor devices11%
G11CStatic stores8%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h108%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h105%
B82YSpecific uses or applications of nanostructures3%
E04GScaffolding3%
G01NInvestigating or analysing materials by determining their chemical or physical properties3%
PatentTitleYear
9,786,764'Fin-FET semiconductor device with a source/drain contact having varying different widths'20179,343,672'Nonvolatile memory devices, nonvolatile memory cells and methods of manufacturing nonvolatile memory devices'20169,159,727'Nonvolatile memory device and method for fabricating the same'20159,153,577'Nonvolatile memory device and method of fabricating the same'20158,822,287'Methods of manufacturing semiconductor devices'20148,796,662'Semiconductor devices with vertical structure including data storage layer or pattern'20148,754,391'Nonvolatile memory devices and methods of fabricating the same'20148,525,247'Non-volatile memory device having variable resistance element'20138,426,304'Methods of manufacturing a vertical type semiconductor device'20138,379,456'Nonvolatile memory devices having dummy cell and bias methods thereof'20137,918,989'Gas sensor and method thereof'20117,858,464'Methods of manufacturing non-volatile memory devices having insulating layers treated using neutral beam irradiation'20107,751,265'Semiconductor device including a plurality of memory units and method of testing the same'20107,646,041'Non-volatile memory devices including vertical channels, methods of operating, and methods of fabricating the same'2010Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2010–2017Patents assigned to SAMSUNG ELECTRONICS CO LTD (14)· patent assignee history
2010–2017Based in Yongin-si, KR· patent location history
2010Based in Gyeonggi-do, KR· patent location history
2010Based in Seoul, KR· patent location history
2013–2016Patents assigned to PARK CHAN-JIN (8)· patent assignee history
2013–2014Patents assigned to BAEK IN-GYU (2)· patent assignee history
2013–2014Patents assigned to CHOI HAN-MEI (2)· patent assignee history
2013–2014Patents assigned to HWANG KI-HYUN (2)· patent assignee history
2013Based in Gwangju, KR· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| SAMSUNG ELECTRONICS CO LTD | 14 | 2010–2017 |
| PARK CHAN-JINself | 8 | 2013–2016 |
| BAEK IN-GYU | 2 | 2013–2014 |
| CHOI HAN-MEI | 2 | 2013–2014 |
| HWANG KI-HYUN | 2 | 2013–2014 |
Locations
| Location | Patents | Span |
|---|---|---|
| Yongin-si, KR | 11 | 2010–2017 |
| Gwangju, KR | 1 | 2013 |
| Gyeonggi-do, KR | 1 | 2010 |
| Seoul, KR | 1 | 2010 |