Inventor

Yuzuru Ohji

Inventor

Hinode, JP

Overview

1986–2005

Patent span

Electricity

Primary field (CPC H)

Patents· 22 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H10Dprimary

H10DInorganic electric semiconductor devices33%

H10BElectronic memory devices32%

H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1020%

H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h103%

Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests3%

C23CCoating metallic material2%

F02BInternal-combustion piston engines2%

G01HMeasurement of mechanical vibrations or ultrasonic, sonic or infrasonic waves2%

G10KSound-producing devices2%

Y10TTechnical subjects covered by former us classification2%

PatentTitleYear

6,927,439'Semiconductor memory with strongly adhesive electrode'2005 6,881,597'Method of manufacturing a semiconductor device to provide a plurality of test element groups (TEGs) in a scribe region'2005 6,781,172'Semiconductor device with adhesion-improvement capacitor and process for producing the device'2004 6,756,262'Semiconductor integrated circuit device having spaced-apart electrodes and the method thereof'2004 6,720,603'CAPACITOR STRUCTURE AND A SEMICONDUCTOR DEVICE WITH A FIRST METAL LAYER, A SECOND METAL SILICIDE LAYER FORMED OVER THE FIRST METAL LAYER AND A SECOND METAL LAYER FORMED OVER THE SECOND METAL SILICIDE LAYER'2004 6,717,202'HSG semiconductor capacitor with migration inhibition layer'2004 6,627,497'Semiconductor integrated circuit device and method of manufacturing the same'2003 6,583,463'Semiconductor integrated circuit device with information storage capacitor having ruthenium dioxide lower electrode and crystallized TA2O5 capacitor insulator'2003 6,576,946'Semiconductor device comprising capacitor cells, bit lines, word lines, and MOS transistors in a memory cell area over a semiconductor substrate'2003 6,534,375'METHOD OF FORMING A CAPACITOR IN A SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE USING A METAL SILICON NITRIDE LAYER TO PROTECT AN UNDERLYING METAL SILICIDE LAYER FROM OXIDATION DURING SUBSEQUENT PROCESSING STEPS'2003 6,524,927'Semiconductor device and method of fabricating the same'2003 6,451,665'Method of manufacturing a semiconductor integrated circuit'2002 6,426,255'Process for making a semiconductor integrated circuit device having a dynamic random access memory'2002 6,423,992'Semiconductor integrated circuit device'2002 6,326,218'Semiconductor integrated circuit and its manufacturing method'2001 6,255,151'Semiconductor integrated circuit device and method of manufacturing same'2001 5,736,449'Semiconductor memory device having improved isolation between electrodes, and process for fabricating the same'1998 5,499,207'Semiconductor memory device having improved isolation between electrodes, and process for fabricating the same'1996 5,343,353'Semiconductor device and process of producing the same'1994 5,188,976'Manufacturing method of non-volatile semiconductor memory device'1993 4,907,046'Semiconductor device with multilayer silicon oxide silicon nitride dielectric'1990 4,563,900'Acoustic microscope'1986

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

1986–2005Patents assigned to HITACHI LTD (20)· patent assignee history

1986Based in Hachioji, JP· patent location history

1990–2002Based in Nishitama-gun, JP· patent location history

1993–2003Based in Tokyo, JP· patent location history

1996–2005Based in Hinode, JP· patent location history

2003–2004Patents assigned to HITACHI ULSI SYS CO LTD (2)· patent assignee history

2004–2005Patents assigned to RENESAS TECH CORP (2)· patent assignee history

Inventor activity

Assignee and location history derived from the patent record.

Assignees

Assignee	Patents	Span
HITACHI LTD	20	1986–2005
HITACHI ULSI SYS CO LTD	2	2003–2004
RENESAS TECH CORP	2	2004–2005

Locations

Location	Patents	Span
Hinode, JP	14	1996–2005
Tokyo, JP	4	1993–2003
Nishitama-gun, JP	3	1990–2002
Hachioji, JP	1	1986