Inventor
Hiroaki Ohta
Inventor
Kyoto, JP
Overview
Patents· 29 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H01Sprimary
H01SDevices using the process of light amplification by stimulated emission of radiation [laser] to amplify or generate light16%
B82YSpecific uses or applications of nanostructures15%
H10HInorganic light-emitting semiconductor devices having potential barriers11%
Y02EReduction of greenhouse gas [ghg] emissions, related to energy generation, transmission or distribution11%
H01MProcesses or means, e.g. batteries, for the direct conversion of chemical energy into electrical energy8%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h108%
H10DInorganic electric semiconductor devices7%
H01LSemiconductor devices5%
C03BManufacture, shaping, or supplementary processes4%
G11BInformation storage based on relative movement between record carrier and transducer3%
PatentTitleYear
10,115,981Fuel cell stack20189,917,422'Semi-polar III-nitride optoelectronic devices on M-plane substrates with miscuts less than +/− 15 degrees in the C-direction'20189,905,880'Fuel cell stack'20189,368,826'Fuel cell stack'20169,269,969'Fuel cell stack'20169,159,553'Semipolar or nonpolar nitride-based devices on partially or fully relaxed alloys with misfit dislocations at the heterointerface'20159,077,151'Semi-polar III-nitride optoelectronic devices on M-plane substrates with miscuts less than +/-15 degrees in the C-direction'20158,968,950'Method of starting operation of solid polymer electrolyte fuel cell'20158,866,126'Anisotropic strain control in semipolar nitride quantum wells by partially or fully relaxed aluminum indium gallium nitride layers with misfit dislocations'20148,761,218'Aluminum gallium nitride barriers and separate confinement heterostructure (SCH) layers for semipolar plane III-nitride semiconductor-based light emitting diodes and laser diodes'20148,692,105'III-V nitride-based thermoelectric device'20148,481,991'Anisotropic strain control in semipolar nitride quantum wells by partially or fully relaxed aluminum indium gallium nitride layers with misfit dislocations'20138,189,640'Laser light emitting device'20128,124,982'Semiconductor light-emitting element and method for fabrication the same'20128,044,434'Semiconductor device employing group III-V nitride semiconductors and method for manufacturing the same'20118,035,131'Method for forming a nitride semiconductor laminated structure and method for manufacturing a nitride semiconductor element'20118,017,932'Light-emitting device'20117,999,286'MIS field effect transistor and method for manufacturing the same'20117,843,980'Semiconductor laser diode'20107,750,369'Nitride semiconductor device'20107,736,785'Fuel cell'20107,550,757'Semiconductor laser and method for manufacturing semiconductor laser'20097,488,970'Semiconductor device'20096,546,760'Optical fiber drawing furnace with a zig zag heating element'20035,737,150'Magnetic disk unit with an impact force applying mechanism'19985,637,130'Method and furnace for drawing optical fibers'19975,624,474'Optical fiber preform manufacturing apparatus which measures a vertical load with three cells'19975,109,368'Optical device using a resilient member'19924,394,340'Method of producing thin-walled endless belt'1983Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
1983–2003Based in Yokohama, JP· patent location history
2009–2012Patents assigned to ROHM CO LTD (10)· patent assignee history
2009–2012Based in Kyoto, JP· patent location history
2010–2018Patents assigned to HONDA MOTOR CO LTD (6)· patent assignee history
2010–2018Based in Utsunomiya, JP· patent location history
2012–2015Patents assigned to OHTA HIROAKI (8)· patent assignee history
2013–2018Patents assigned to UNIV CALIFORNIA (7)· patent assignee history
2013–2015Patents assigned to DENBAARS STEVEN P (5)· patent assignee history
2014–2018Based in Tokyo, JP· patent location history
2016–2018Based in Wako, JP· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| ROHM CO LTD | 10 | 2009–2012 |
| OHTA HIROAKIself | 8 | 2012–2015 |
| UNIV CALIFORNIA | 7 | 2013–2018 |
| HONDA MOTOR CO LTD | 6 | 2010–2018 |
| DENBAARS STEVEN P | 5 | 2013–2015 |
Locations
| Location | Patents | Span |
|---|---|---|
| Kyoto, JP | 10 | 2009–2012 |
| Tokyo, JP | 5 | 2014–2018 |
| Utsunomiya, JP | 4 | 2010–2018 |
| Yokohama, JP | 3 | 1983–2003 |
| Wako, JP | 2 | 2016–2018 |