Inventor

Hisanao Tsuge

Inventor

Tokyo, JP

Overview

22→

Patents

1985–2009

Patent span

Electricity

Primary field (CPC H)

Patents· 22 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

B82Yprimary

B82YSpecific uses or applications of nanostructures22%

G11BInformation storage based on relative movement between record carrier and transducer21%

H01FMagnets13%

G01RMeasuring electric variables11%

H10NElectric solid-state devices not otherwise provided for11%

Y10TTechnical subjects covered by former us classification7%

H10KOrganic electric solid-state devices4%

H05BElectric heating3%

Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests3%

G11CStatic stores1%

PatentTitleYear

7,638,797'Substrate of emitting device and emitting device using the same'2009 7,391,048'Optical control portion with graded metal dopant to control refractive index'2008 7,372,673'Magnetoresistive effect transducer having longitudinal bias layer and control layer directly connected to free layer'2008 7,180,235'Light-emitting device substrate with light control layer and light-emitting device using the same'2007 6,950,290'Magnetoresistive effect transducer having longitudinal bias layer directly connected to free layer'2005 6,914,257'Magnetoresistive device and method of producing the same'2005 6,639,766'Magneto-resistance effect type composite head and production method thereof'2003 6,542,342'Magnetoresistive effect transducer having longitudinal bias layer directly connected to free layer'2003 6,538,861'MAGNETORESISTIVE HEAD HAVING FERROMAGNETIC TUNNEL JUNCTION FILM WITH A SMALLER RESISTANCE AT A TERMINAL PORTION THAN A CENTRAL PORTION, MAGNETIC RESISTANCE DETECTION SYSTEM WITH THE MAGNETORESISTIVE HEAD AND A MAGNETIC STORAGE SYSTEM USING IT'2003 6,493,195'Magnetoresistance element, with lower electrode anti-erosion/flaking layer'2002 6,490,139'Magneto-resistive element and magnetic head for data writing/reading'2002 6,452,204'Tunneling magnetoresistance transducer and method for manufacturing the same'2002 6,392,281'Ferromagnetic tunnel junction device and method of forming the same'2002 6,341,053'Magnetic tunnel junction elements and their fabrication method'2002 6,333,842'Magneto-resistance effect type composite head and production method thereof'2001 6,329,078'Magnetoresistive element and method of forming the same'2001 6,215,696'Ferromagnetic tunnel junction device and method of forming the same'2001 6,174,736'Method of fabricating ferromagnetic tunnel junction device'2001 5,681,500'Magnetic oxide having a large magnetoresistance effect at room temperature'1997 4,983,545'Planarization of dielectric films on integrated circuits'1991 4,953,283'Method of handling electronic component chips'1990 4,548,834'Method of producing a Josephson tunnel barrier'1985

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

1985–2008Patents assigned to NEC CORP (18)· patent assignee history

1985–2009Based in Tokyo, JP· patent location history

1990Patents assigned to MURATA MANUFACTURING CO (1)· patent assignee history

1990Based in Kyoto, JP· patent location history

1991Patents assigned to SANYO CHEMICAL IND LTD (1)· patent assignee history

2007–2008Patents assigned to SAMSUNG SDI CO LTD (2)· patent assignee history

2009Patents assigned to SAMSUNG MOBILE DISPLAY CO LTD (1)· patent assignee history

Inventor activity

Assignee and location history derived from the patent record.

Assignees

Assignee	Patents	Span
NEC CORP	18	1985–2008
SAMSUNG SDI CO LTD	2	2007–2008
MURATA MANUFACTURING CO	1	1990
SAMSUNG MOBILE DISPLAY CO LTD	1	2009
SANYO CHEMICAL IND LTD	1	1991

Locations

Location	Patents	Span
Tokyo, JP	21	1985–2009
Kyoto, JP	1	1990