Inventor

Cheng-Shang Lai

Inventor

Taichung, TW

Overview

3→

Patents

2000–2021

Patent span

Electricity

Primary field (CPC H)

Patents· 3 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H10Dprimary

H10DInorganic electric semiconductor devices50%

H01LSemiconductor devices17%

H10FInorganic semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation17%

H10HInorganic light-emitting semiconductor devices having potential barriers17%

PatentTitleYear

10,964,746Deep trench isolation shrinkage method for enhanced device performance2021 6,259,140'Silicide blocking process to form non-silicided regions on MOS devices'2001 6,121,092'Silicide blocking process to form non-silicided regions on MOS devices'2000

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

2000–2001Patents assigned to MACRONIX INT CO LTD (2)· patent assignee history

2000–2001Based in Taichung, TW· patent location history

2021Patents assigned to TAIWAN SEMICONDUCTOR MFG CO LTD (1)· patent assignee history

2021Based in Tainan, TW· patent location history

Inventor activity

Assignee and location history derived from the patent record.

Assignees

Assignee	Patents	Span
MACRONIX INT CO LTD	2	2000–2001
TAIWAN SEMICONDUCTOR MFG CO LTD	1	2021

Locations

Location	Patents	Span
Taichung, TW	2	2000–2001
Tainan, TW	1	2021