Inventor
BRIAN R. YORK
Inventor
US
Overview
Patents· 35 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
G11Bprimary
G11BInformation storage based on relative movement between record carrier and transducer32%
H10NElectric solid-state devices not otherwise provided for17%
H10BElectronic memory devices15%
H01FMagnets13%
G11CStatic stores7%
G01RMeasuring electric variables5%
H01LSemiconductor devices3%
B82YSpecific uses or applications of nanostructures2%
C22CAlloys1%
C23CCoating metallic material1%
PatentTitleYear
12,567,438Magnetic heads having low magnetic coercivity (Hc) and high saturated magnetic flux density (Bs) in ferromagnetic (FM) layer(s) or shield(s) with minimized saturation202612,527,232BiSb topological insulator with seed layer or interlayer to prevent Sb diffusion and promote BiSb (012) orientation202612,505,856Highly textured buffer layer to grow YBiPt (110) for spintronic applications202512,487,296Spin orbit torque based thermal sensor for insitu monitoring of magnetic recording head202512,482,588Nitrogen doped oxides for lower bandgap202512,417,782Multilayer structures for magnetic recording devices to facilitate targeted magnetic switching and low coercivity202512,412,597Non-localized spin valve multi-free-layer reader hybridized with spin orbit torque layers202512,405,323Magnetic sensor half-bridge based on inverse spin hall effect with reduced thermal drift202512,408,560Buffer layers and interlayers that promote BiSbx (012) alloy orientation for sot and MRAM devices202512,394,432Non-localized spin valve reader hybridized with spin orbit torque layer202512,354,627Higher areal density non-local spin orbit torque (SOT) writer with topological insulator materials202512,354,629SOT reader with recessed SOT topological insulator material202512,334,123Spin-orbit torque SOT reader with recessed spin hall effect layer202512,207,563Magnetoresistive devices comprising a synthetic antiferromagnetic coupling layer of RuAl having a (110) texture202512,176,132Highly textured 001 BiSb and materials for making same202412,154,603Spin-orbit torque (SOT) writer with topological insulator materials202412,136,446TDMR SOT read heads having recessed topological insulator materials202412,125,512Doping process to refine grain size for smoother BiSb film surface202412,125,508Topological insulator based spin torque oscillator reader202412,106,791Doped BiSb (012) or undoped BiSb (001) topological insulator with GeNiFe buffer layer and/or interlayer for SOT based sensor, memory, and storage devices202412,106,784Read sensor with ordered heusler alloy free layer and semiconductor barrier layer202412,040,114Magnetoresistive device comprising a synthetic antiferromagnetic coupling layer of RuAl having a (001) texture202412,035,634Tunneling magnetoresistive (TMR) device with improved seed layer202412,033,675Cobalt-boron (CoB) layer for magnetic recording devices, memory devices, and storage devices202411,990,163Multilayer structures for magnetic recording devices to facilitate targeted magnetic switching and low coercivity202411,908,496BiSbX (012) layers having increased operating temperatures for SOT and MRAM devices202411,875,827SOT reader using BiSb topological insulator202411,783,853Topological insulator based spin torque oscillator reader202311,776,567SOT film stack for differential reader202311,763,973Buffer layers and interlayers that promote BiSbx (012) alloy orientation for SOT and MRAM devices202311,694,713BiSb topological insulator with novel buffer layer that promotes a BiSb (012) orientation202311,682,420Seed layer for spin torque oscillator in microwave assisted magnetic recording device202311,532,323BiSbX (012) layers having increased operating temperatures for SOT and MRAM devices202211,495,741Bismuth antimony alloys for use as topological insulators202211,489,108BiSb topological insulator with seed layer or interlayer to prevent sb diffusion and promote BiSb (012) orientation2022Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2022–2026Patents assigned to WESTERN DIGITAL TECH INC (35)· patent assignee history
2022–2026Based in US· patent location history
2023–2025Patents assigned to TOKYO INST TECH (7)· patent assignee history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| WESTERN DIGITAL TECH INC | 35 | 2022–2026 |
| TOKYO INST TECH | 7 | 2023–2025 |
Locations
| Location | Patents | Span |
|---|---|---|
| US | 35 | 2022–2026 |