Inventor
Cory Wajda
Inventor
Sand Lake, NY, US
Overview
Patents· 25 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Pprimary
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1025%
C23CCoating metallic material16%
H10DInorganic electric semiconductor devices15%
H01LSemiconductor devices13%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1013%
H01JElectric discharge tubes or discharge lamps4%
H10BElectronic memory devices3%
B01JChemical or physical processes, e.g. catalysis or colloid chemistry1%
B32BLayered products, i.e. products built-up of strata of flat or non-flat, e.g. cellular or honeycomb, form1%
B81CProcesses or apparatus specially adapted for the manufacture or treatment of microstructural devices or systems1%
PatentTitleYear
11,024,535Method for filling recessed features in semiconductor devices with a low-resistivity metal202110,991,881Method for controlling the forming voltage in resistive random access memory devices202110,950,460Method utilizing using post etch pattern encapsulation202110,700,009Ruthenium metal feature fill for interconnects202010,157,784Integration of a self-forming barrier layer and a ruthenium metal liner in copper metallization201810,068,764Selective metal oxide deposition using a self-assembled monolayer surface pretreatment201810,056,328Ruthenium metal feature fill for interconnects201810,008,564Method of corner rounding and trimming of nanowires by microwave plasma20189,711,449'Ruthenium metal feature fill for interconnects'20179,607,888'Integration of ALD barrier layer and CVD Ru liner for void-free Cu filling'20178,722,548'Structures and techniques for atomic layer deposition'20148,460,945'Method for monitoring status of system components'20137,964,515'Method of forming high-dielectric constant films for semiconductor devices'20117,517,814'Method and system for forming an oxynitride layer by performing oxidation and nitridation concurrently'20097,501,352'Method and system for forming an oxynitride layer'20097,479,454'Method and processing system for monitoring status of system components'20097,470,591'Method of forming a gate stack containing a gate dielectric layer having reduced metal content'20087,419,702'Method for processing a substrate'20087,393,761'Method for fabricating a semiconductor device'20087,300,891'Method and system for increasing tensile stress in a thin film using multi-frequency electromagnetic radiation'20077,235,440'Formation of ultra-thin oxide layers by self-limiting interfacial oxidation'20077,202,186'Method of forming uniform ultra-thin oxynitride layers'20076,974,779'Interfacial oxidation process for high-k gate dielectric process integration'20056,500,761'Method for improving the adhesion and durability of CVD tantalum and tantalum nitride modulated films by plasma treatment'20026,455,414'Method for improving the adhesion of sputtered copper films to CVD transition metal based underlayers'2002Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2002–2021Patents assigned to TOKYO ELECTRON LTD (21)· patent assignee history
2002–2009Based in Mesa, AZ, US· patent location history
2005–2021Patents assigned to IBM (8)· patent assignee history
2007–2020Based in Sand Lake, NY, US· patent location history
2008–2013Based in Hopewell Junction, NY, US· patent location history
2013–2014Patents assigned to LEUSINK GERT (2)· patent assignee history
2013–2014Patents assigned to WAJDA CORY (2)· patent assignee history
2014Patents assigned to AOYAMA SHINTARO (1)· patent assignee history
2017–2021Based in Albany, NY, US· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| TOKYO ELECTRON LTD | 21 | 2002–2021 |
| IBM | 8 | 2005–2021 |
| LEUSINK GERT | 2 | 2013–2014 |
| WAJDA CORYself | 2 | 2013–2014 |
| AOYAMA SHINTARO | 1 | 2014 |
Locations
| Location | Patents | Span |
|---|---|---|
| Sand Lake, New York, US | 13 | 2007–2020 |
| Mesa, AZ, US | 6 | 2002–2009 |
| Albany, New York, US | 4 | 2017–2021 |
| Hopewell Junction, New York, US | 2 | 2008–2013 |