Inventor
Eng Fong Chor
Inventor
Singapore, SG
Overview
Patents· 6 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Dprimary
H10DInorganic electric semiconductor devices36%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1021%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1014%
G01QScanning-probe techniques or apparatus7%
G01RMeasuring electric variables7%
H10BElectronic memory devices7%
Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests7%
PatentTitleYear
7,400,018'End of range (EOR) secondary defect engineering using chemical vapor deposition (CVD) substitutional carbon doping'20087,109,099'End of range (EOR) secondary defect engineering using substitutional carbon doping'20067,071,069'Shallow amorphizing implant for gettering of deep secondary end of range defects'20066,252,277'Embedded polysilicon gate MOSFET'20016,096,604'Production of reversed flash memory device'20006,064,201'Method and apparatus to image metallic patches embedded in a non-metal surface'2000Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2000–2008Patents assigned to CHARTERED SEMICONDUCTOR MFG (6)· patent assignee history
2000–2001Patents assigned to UNIV SINGAPORE (2)· patent assignee history
2000Patents assigned to INST OF MICROELECTRONICS (1)· patent assignee history
2000Patents assigned to UNIV NANYANG (1)· patent assignee history
2000–2008Based in Singapore, SG· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| CHARTERED SEMICONDUCTOR MFG | 6 | 2000–2008 |
| UNIV SINGAPORE | 2 | 2000–2001 |
| INST OF MICROELECTRONICS | 1 | 2000 |
| UNIV NANYANG | 1 | 2000 |
Locations
| Location | Patents | Span |
|---|---|---|
| Singapore, SG | 6 | 2000–2008 |