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Inventor

Nobuyuki Ishiwata

Inventor
Tokyo, JP

Overview

92→
Patents
1990–2017
Patent span
Physics
Primary field (CPC G)

Patents· 92 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

G11Bprimary
G11BInformation storage based on relative movement between record carrier and transducer20%
B82YSpecific uses or applications of nanostructures15%
H10NElectric solid-state devices not otherwise provided for12%
G11CStatic stores11%
H10BElectronic memory devices10%
H01FMagnets9%
G01RMeasuring electric variables7%
Y10TTechnical subjects covered by former us classification6%
Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests3%
H01LSemiconductor devices2%
PatentTitleYear
9,799,822'Magnetic memory element and magnetic memory'20179,379,312'Magnetoresistive effect element and magnetic random access memory using the same'20169,083,336'Non-volatile logic operation device'20158,994,130'Magnetic memory element and magnetic memory'20158,923,042'Magnetic random access memory'20148,791,534'Magnetic memory device and magnetic memory'20148,787,076'Magnetic memory and method of manufacturing the same'20148,687,414'Magnetic memory element and magnetic random access memory'20148,625,327'Magnetic random access memory and initializing method for the same'20148,592,930'Magnetic memory element, magnetic memory and initializing method'20138,565,011'Method of initializing magnetic memory element'20138,559,214'Magnetic memory device and magnetic random access memory'20138,547,733'Magnetic random access memory'20138,537,604'Magnetoresistance element, MRAM, and initialization method for magnetoresistance element'20138,526,222'Magnetic random access memory'20138,514,616'Magnetic memory element and magnetic memory'20138,503,222'Non-volatile logic circuit'20138,416,611'Magnetoresistance effect element and magnetic random access memory'20138,379,429'Domain wall motion element and magnetic random access memory'20138,363,461'Magnetic random access memory, method of initializing magnetic random access memory and method of writing magnetic random access memory'20138,351,249'Magnetic random access memory'20138,194,436'Magnetic random access memory, write method therefor, and magnetoresistance effect element'20128,174,873'Magnetic random access memory and initializing method for the same'20128,174,086'Magnetoresistive element, and magnetic random access memory'20128,159,872'Magnetic random access memory'20128,154,913'Magnetoresistance effect element and magnetic random access memory'20128,149,615'Magnetic random access memory'20128,120,950'Semiconductor device'20128,120,127'Magnetic random access memory and method of manufacturing the same'20128,040,724'Magnetic domain wall random access memory'20117,948,783'MRAM'20117,929,342'Magnetic memory cell, magnetic random access memory, and data read/write method for magnetic random access memory'20117,855,860'Magnetoresistance element magnetic random access memory, magnetic head and magnetic storage device'20107,372,673'Magnetoresistive effect transducer having longitudinal bias layer and control layer directly connected to free layer'20087,369,375'Magneto-resistance effect element and magneto-resistance effect head'20087,298,596'Magneto-resistance effect element, magneto-resistance effect head, magneto-resistance transducer system, and magnetic storage system'20077,277,261'Magneto-resistance effect element, magneto-resistance effect head, magneto-resistance transducer system, and magnetic storage system'20077,265,949'Magneto-resistance effect element, magneto-resistance effect head, magneto-resistance transducer system, and magnetic storage system'20077,239,482'Thin-film magnetic head and nonmagnetic body filled concave portion formed on a pole layer and magnetic storage apparatus using the same'20077,230,794'Thin-film magnetic head with nonmagnetic body filled concave portion formed on a pole layer and magnetic storage apparatus using the same'20077,173,793'Recording head, recording head manufacturing method, combined head and magnetic recording/reproduction apparatus'20077,161,774'Magneto-resistance effect element, magneto-resistance effect head, magneto-resistance transducer system, and magnetic storage system'20077,158,355'Magneto-resistance effect element, magneto-resistance effect head, magneto-resistance transducer system, and magnetic storage system'20077,085,109'Spin valve type transducer capable of reducing reproducing gap'20067,079,360'Spin valve transducer having partly patterned magnetoresistance element'20067,054,107'Thin-film magnetic head with nonmagnetic body filled concave portion formed on a pole layer and magnetic storage apparatus using the same'20067,042,319'Thin film electromagnet and switching device comprising it'20067,023,659'Magnetic head having an antistripping layer for preventing a magnetic layer from stripping'20066,999,287'Magneto-resistance effect element, magneto-resistance effect head, magneto-resistance transducer system, and magnetic storage system'20066,950,290'Magnetoresistive effect transducer having longitudinal bias layer directly connected to free layer'20056,934,132'Magneto-resistance effect element, magneto-resistance effect head, magneto-resistance transducer system, and magnetic storage system'20056,903,908'Magnetoresistive effect sensor with barrier layer smoothed by composition of lower shield layer'20056,804,088'Thin film magnetic head, manufacturing method thereof and magnetic storage'20046,798,626'Magnetoresistive effect element having a ferromagnetic tunnel junction film with an oxide or nitride of a metallic material'20046,795,271'Recording head, recording head manufacturing method, combined head and magnetic recording/reproduction apparatus'20046,791,794'Magnetic head having an antistripping layer for preventing a magnetic layer from stripping'20046,780,530'Magnetic material having a high saturation magnetic flux density and a low coercive force'20046,754,051'Spin valve transducer having partly patterned magnetoresistance element'20046,747,853'Magneto-resistance effect element, magneto-resistance effect head, magneto-resistance transducer system, and magnetic storage system'20046,718,621'Magnetoresistive head production method'20046,687,082'Magnetic head and manufacturing method thereof and magnetic recording and reproducing apparatus'20046,671,140'Magnetic head using a magnetoresistance effect based on ferromagnetic junction, and magnetic recording/reproducing apparatus using the same'20036,624,987'Magnetic head with a tunnel junction including metallic material sandwiched between one of an oxide and a nitride of the metallic material'20036,597,543'Thin-film magnetic head and magnetic storage apparatus using the same'20036,592,811'Magnetic material having a high saturation magnetic flux density and a low coercive force'20036,542,342'Magnetoresistive effect transducer having longitudinal bias layer directly connected to free layer'20036,493,195'Magnetoresistance element, with lower electrode anti-erosion/flaking layer'20026,490,139'Magneto-resistive element and magnetic head for data writing/reading'20026,466,416'Magnetic head, method for making the same and magnetic recording/reproducing device using the same'20026,452,204'Tunneling magnetoresistance transducer and method for manufacturing the same'20026,392,851'Magnetoresistance effect type complex head and method for manufacturing the same'20026,341,053'Magnetic tunnel junction elements and their fabrication method'20026,267,824'Method for manufacturing a magnetoresistive effect composite having a pole containing Co-M'20016,174,736'Method of fabricating ferromagnetic tunnel junction device'20016,154,345'Magnetoresistive effect composite head'20006,141,859'Method for making a merged head device'20006,125,009'Magnetoresistive effect composite head having a pole containing Co-M'20006,057,991'Thin film magnetic head with an improved surface to reduce the occurrence of head crash'20006,055,137'Magnetoresistive effect composite head with configured pole tip'20006,026,559'Method for fabricating a complex magnetic head including a reproducing magneto-resistance head'20005,938,941'Magnetoresistance effect composite head and method of forming the same'19995,910,870'Magnetoresistive effect composite head with laminated magnetic layer isolated from magnetic pole layer'19995,892,641'Magnetoresistive effect head with individual layers satisfying a basic inequality involving layer thickness and ion milling rates'19995,876,843'Magnetoresistive element'19995,736,264'Magnetic core and magnetic head using the same'19985,641,557'Magnetoresistive element'19975,572,391'Magnetic head'19965,475,554'Magnetic head using specified Fe Ta N Cu or Fe Ta N Ag alloy film'19955,454,920'Sputtering method and apparatus for optimum saturation magnetostriction'19955,404,259'Magnetic head having high wear resistance and non-magnetic substrate used in the magnetic head'19955,304,258'Magnetic alloy consisting of a specified FeTaN Ag or FeTaNCu composition'19944,980,875'Magneto-optical disk with perpendicular magnetic anisotropy film and high corrosion-resistant film'1990

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

1990Based in Osaka, JP· patent location history
1994–2017Patents assigned to NEC CORP (83)· patent assignee history
1994–2017Based in Tokyo, JP· patent location history
2012–2017Patents assigned to ISHIWATA NOBUYUKI (28)· patent assignee history
2012–2017Patents assigned to FUKAMI SHUNSUKE (25)· patent assignee history
2012–2016Patents assigned to OHSHIMA NORIKAZU (23)· patent assignee history
2012–2016Patents assigned to SUZUKI TETSUHIRO (22)· patent assignee history

Inventor activity

Assignee and location history derived from the patent record.

Assignees
AssigneePatentsSpan
NEC CORP831994–2017
ISHIWATA NOBUYUKIself282012–2017
FUKAMI SHUNSUKE252012–2017
OHSHIMA NORIKAZU232012–2016
SUZUKI TETSUHIRO222012–2016
Locations
LocationPatentsSpan
Tokyo, JP911994–2017
Osaka, JP11990