Inventor

Hee-Seog Jeon

Inventor

Suwon-si, KR

Overview

1998–2016

Patent span

Electricity

Primary field (CPC H)

Patents· 54 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H10Bprimary

H10BElectronic memory devices35%

H10DInorganic electric semiconductor devices32%

G11CStatic stores19%

H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h106%

E05YIndexing scheme associated with subclasses e05d and e05f, relating to construction elements, electric control, power supply, power signal or transmission, user interfaces, mounting or coupling, details, accessories, auxiliary operations not otherwise provided for, application thereof2%

E06BFixed or movable closures for openings in buildings, vehicles, fences or like enclosures in general, e.g. doors, windows, blinds, gates2%

H01LSemiconductor devices2%

H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h102%

Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests1%

PatentTitleYear

9,330,745'Magnetic memory devices including magnetic memory cells having opposite magnetization directions'2016 9,318,181'Magnetic memory devices including shared lines'2016 9,082,865'Split-gate type nonvolatile memory device, semiconductor device having split-type nonvolatile memory device embedded therein, and methods of forming the same'2015 8,698,239'Semiconductor devices having asymmetric doped regions and methods of fabricating the same'2014 8,432,742'Non-volatile memory device, system, and cell array'2013 8,110,873'High voltage transistor'2012 8,111,553'Non-volatile semiconductor memory device in which program disturb is reduced and method of programming the same'2012 8,059,473'Non-volatile memory device'2011 8,053,342'Mask ROM device, semiconductor device including the mask ROM device, and methods of fabricating mask ROM device and semiconductor device'2011 7,944,753'Electrically erasable programmable read-only memory (EEPROM) cell and methods for forming and reading the same'2011 7,928,492'Non-volatile memory integrated circuit device and method of fabricating the same'2011 7,839,680'Electrically erasable programmable read-only memory (EEPROM) cell and methods for forming and reading the same'2010 7,799,635'Methods of forming nonvolatile memory devices'2010 7,800,158'Semiconductor device and method of forming the same'2010 7,791,951'Methods of operating non-volatile memory device'2010 7,777,256'Mask ROM device, semiconductor device including the mask ROM device, and methods of fabricating mask ROM device and semiconductor device'2010 7,768,061'Self aligned 1 bit local SONOS memory cell'2010 7,733,696'Non-volatile memory devices including local control gates on multiple isolated well regions and related methods and systems'2010 7,697,336'Non-volatile memory device and method of operating the same'2010 7,696,561'Non-volatile memory device, method of manufacturing the same and method of operating the same'2010 7,642,593'Nonvolatile memory device and method of fabricating the same'2010 7,638,387'Mask ROM and method of fabricating the same'2009 7,602,008'Split gate non-volatile memory devices and methods of forming the same'2009 7,602,004'Semiconductor device and methods for forming the same'2009 7,586,146'Non-volatile memory and method of fabricating same'2009 7,557,404'Nonvolatile memory devices and methods of forming the same'2009 7,553,725'Nonvolatile memory devices and methods of fabricating the same'2009 7,531,410'Semiconductor flash memory device and method of fabricating the same'2009 7,521,750'Semiconductor device having multi-bit nonvolatile memory cell and methods of fabricating the same'2009 7,515,468'Nonvolatile memory device'2009 7,512,003'Non-volatile memory device'2009 7,492,000'Self-aligned split-gate nonvolatile memory structure and a method of making the same'2009 7,492,002'Non-volatile memory device with a select gate electrode and a control gate electrode formed on a floating gate'2009 7,462,533'Memory cell and method for fabricating same'2008 7,429,766'Split gate type nonvolatile memory device'2008 7,422,949'High voltage transistor and method of manufacturing the same'2008 7,351,636'Methods of forming split-gate non-volatile memory cells including raised oxide layers on field oxide regions'2008 7,345,336'Semiconductor memory device having self-aligned charge trapping layer'2008 7,339,232'Semiconductor device having multi-bit nonvolatile memory cell and methods of fabricating the same'2008 7,320,913'Methods of forming split-gate non-volatile memory devices'2008 7,315,057'Split gate non-volatile memory devices and methods of forming same'2008 7,271,061'Method of fabricating non-volatile memory'2007 7,238,572'Method of manufacturing EEPROM cell'2007 7,221,028'High voltage transistor and method of manufacturing the same'2007 7,176,085'Method of manufacturing split gate type nonvolatile memory device'2007 7,148,110'Local-length nitride SONOS device having self-aligned ONO structure and method of manufacturing the same'2006 7,141,473'Self-aligned 1 bit local SONOS memory cell and method of fabricating the same'2006 7,078,295'Self-aligned split-gate nonvolatile memory structure and a method of making the same'2006 7,064,378'Local-length nitride SONOS device having self-aligned ONO structure and method of manufacturing the same'2006 7,037,783'Method of manufacturing split gate type nonvolatile memory device having self-aligned spacer type control gate'2006 7,015,541'Memory cell including stacked gate sidewall patterns and method for fabricating same'2006 6,255,716'Bipolar junction transistors having base electrode extensions'2001 6,048,773'Methods of forming bipolar junction transistors having preferred base electrode extensions and transistors formed thereby'2000 5,747,374'Methods of fabricating bipolar transistors having separately formed intrinsic base and link-up regions'1998

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

1998–2016Patents assigned to SAMSUNG ELECTRONICS CO LTD (54)· patent assignee history

2000–2010Based in Kyungki-do, KR· patent location history

2006–2011Based in Hwaseong-si, KR· patent location history

2006–2015Based in Gyeonggi-do, KR· patent location history

2006–2009Based in Hwasung, KR· patent location history

2009–2016Based in Suwon-si, KR· patent location history

2011–2016Patents assigned to JEON HEE-SEOG (7)· patent assignee history

2012–2016Patents assigned to SEO BO-YOUNG (3)· patent assignee history

2016Patents assigned to LEE CHOONG-JAE (2)· patent assignee history

2016Patents assigned to LEE YONG-KYU (2)· patent assignee history

Inventor activity

Assignee and location history derived from the patent record.

Assignees

Assignee	Patents	Span
SAMSUNG ELECTRONICS CO LTD	54	1998–2016
JEON HEE-SEOGself	7	2011–2016
SEO BO-YOUNG	3	2012–2016
LEE CHOONG-JAE	2	2016
LEE YONG-KYU	2	2016

Locations

Location	Patents	Span
Suwon-si, KR	18	2009–2016
Hwaseong-si, KR	15	2006–2011
Gyeonggi-do, KR	7	2006–2015
Hwasung, KR	7	2006–2009
Kyungki-do, KR	5	2000–2010