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Inventor

Chiu Ng

Inventor
El Segundo, CA, US

Overview

35→
Patents
1991–2018
Patent span
Electricity
Primary field (CPC H)

Patents· 35 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H10Dprimary
H10DInorganic electric semiconductor devices56%
H01LSemiconductor devices19%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1011%
Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests7%
F42BExplosive charges, e.g. for blasting, fireworks, ammunition4%
B05CApparatus for applying fluent materials to surfaces, in general2%
G01FMeasuring volume, volume flow, mass flow or liquid level2%
PatentTitleYear
10,164,078Bipolar semiconductor device with multi-trench enhancement regions201810,115,812Semiconductor device having a superjunction structure20189,871,128'Bipolar semiconductor device with sub-cathode enhancement regions'20189,859,407'IGBT having deep gate trench'20189,831,330Bipolar semiconductor device having a deep charge-balanced structure20179,799,725'IGBT having a deep superjunction structure'20179,768,284'Bipolar semiconductor device having a charge-balanced inter-trench structure'20179,685,506'IGBT having an inter-trench superjunction structure'20179,656,288'Dispensing device for conveniently dispensing material'20179,496,378'IGBT with buried emitter electrode'20169,299,819'Deep gate trench IGBT'20169,245,985'IGBT with buried emitter electrode'20168,314,002'Semiconductor device having increased switching speed'20128,067,797'Variable threshold trench IGBT with offset emitter contacts'20117,956,419'Trench IGBT with depletion stop layer'20117,655,977'Trench IGBT for highly capacitive loads'20107,534,666'High voltage non punch through IGBT for switch mode power supplies'20097,507,608'IGBT with amorphous silicon transparent collector'20097,485,920'Process to create buried heavy metal at selected depth'20097,335,947'Angled implant for shorter trench emitter'20087,005,702'IGBT with amorphous silicon transparent collector'20066,919,248'Angled implant for shorter trench emitter'20056,753,580'Diode with weak anode'20046,707,111'Hydrogen implant for buffer zone of punch-through non EPI IGBT'20046,683,331'Trench IGBT'20046,627,961'Hybrid IGBT and MOSFET for zero current at zero voltage'20036,603,153'Fast recovery diode and method for its manufacture'20036,482,681'Hydrogen implant for buffer zone of punch-through non epi IGBT'20026,426,248'Process for forming power MOSFET device in float zone, non-epitaxial silicon'20026,261,874'Fast recovery diode and method for its manufacture'20016,242,288'Anneal-free process for forming weak collector'20016,197,649'Process for manufacturing planar fast recovery diode using reduced number of masking steps'20015,766,966'Power transistor device having ultra deep increased concentration region'1998H0001412'Sabot stiffener for kinetic energy projectile'1995H0000932'Projectile fin'1991

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

1991–1995Based in Wharton, NJ, US· patent location history
1998–2016Patents assigned to INT RECTIFIER CORP (23)· patent assignee history
1998–2018Based in El Segundo, CA, US· patent location history
2011–2012Patents assigned to NG CHIU (2)· patent assignee history
2011Patents assigned to CHAO YUAN-HENG (1)· patent assignee history
2012Patents assigned to FRANCIS RICHARD (1)· patent assignee history
2016–2018Patents assigned to INFINEON TECHNOLOGIES AMERICAS CORP (11)· patent assignee history
2017Based in Hong Kong, CN· patent location history

Inventor activity

Assignee and location history derived from the patent record.

Assignees
AssigneePatentsSpan
INT RECTIFIER CORP231998–2016
INFINEON TECHNOLOGIES AMERICAS CORP112016–2018
NG CHIUself22011–2012
CHAO YUAN-HENG12011
FRANCIS RICHARD12012
Locations
LocationPatentsSpan
El Segundo, California, US321998–2018
Wharton, New Jersey, US21991–1995
Hong Kong, CN12017