Inventor
CHANG SOO SUH
Inventor
US
Overview
Patents· 6 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Dprimary
H10DInorganic electric semiconductor devices33%
H01LSemiconductor devices28%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1017%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1011%
B82YSpecific uses or applications of nanostructures6%
G01RMeasuring electric variables6%
PatentTitleYear
12,520,547Monolithic integration of high and low-side GaN FETS with screening back gating effect202612,046,666Gallium nitride (GaN) based transistor with multiple p-GaN blocks202411,978,790Normally-on gallium nitride based transistor with p-type gate202411,888,027Monolithic integration of high and low-side GaN FETs with screening back gating effect202411,302,785Method for testing a high voltage transistor with a field plate202211,177,378HEMT having conduction barrier between drain fingertip and source2021Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2021–2026Patents assigned to TEXAS INSTRUMENTS INC (6)· patent assignee history
2021–2026Based in US· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| TEXAS INSTRUMENTS INC | 6 | 2021–2026 |
Locations
| Location | Patents | Span |
|---|---|---|
| US | 6 | 2021–2026 |