Inventor
Hong-Hsiang Tsai
Inventor
Hsinchu, TW
Overview
Patents· 6 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Bprimary
H10BElectronic memory devices50%
G11CStatic stores17%
H10DInorganic electric semiconductor devices17%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1017%
PatentTitleYear
8,072,067'Semiconductor structure'20116,423,594'Method of fabricating deep trench capacitor'20026,352,896'Method of manufacturing DRAM capacitor'20025,917,748'Multi-level DRAM sensing scheme'19995,763,306'Method of fabricating capacitor over bit line COB structure for a very high density DRAM applications'19985,691,213'Low capacitance input/output integrated circuit'1997Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
1997–1999Patents assigned to VANGUARD INT SEMICONDUCT CORP (3)· patent assignee history
1997–2011Based in Hsinchu, TW· patent location history
2002–2011Patents assigned to WINBOND ELECTRONICS CORP (3)· patent assignee history
2011Patents assigned to CHENG TSAN-YAO (1)· patent assignee history
2011Patents assigned to CHIAN MING-CHUNG (1)· patent assignee history
2011Patents assigned to LIN LI-CHENG (1)· patent assignee history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| VANGUARD INT SEMICONDUCT CORP | 3 | 1997–1999 |
| WINBOND ELECTRONICS CORP | 3 | 2002–2011 |
| CHENG TSAN-YAO | 1 | 2011 |
| CHIAN MING-CHUNG | 1 | 2011 |
| LIN LI-CHENG | 1 | 2011 |
Locations
| Location | Patents | Span |
|---|---|---|
| Hsinchu, TW | 6 | 1997–2011 |