Inventor
Sun Jin Yun
Inventor
Daejeon, KR
Overview
Patents· 36 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Dprimary
H10DInorganic electric semiconductor devices11%
H10NElectric solid-state devices not otherwise provided for9%
H01LSemiconductor devices8%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h107%
C23CCoating metallic material5%
H10FInorganic semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation5%
H05BElectric heating4%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h104%
Y02EReduction of greenhouse gas [ghg] emissions, related to energy generation, transmission or distribution4%
H10KOrganic electric solid-state devices3%
PatentTitleYear
10,811,254Method for fabricating metal chalcogenide thin films202010,580,714Nano flake defect passivation method and electronic device manufactured using the same202010,545,114Chemical sensor and a method for manufacturing the same202010,483,300Optically restorable semiconductor device, method for fabricating the same, and flash memory device using the same201910,361,313Electronic device and methods of fabricating the same201910,240,256Electro spinning apparatus201910,153,141Apparatus for monitoring gas and plasma process equipment including the same20189,825,226'Method for controlling an increase in conductivity of a polymer thin-film to provide a conductive film'20179,397,248'Silicon solar cell'20169,257,579'Electronic devices and method of fabricating the same'20168,890,574'Circuit for preventing self-heating of metal-insulator-transition (MIT) device and method of fabricating integrated-device for the same circuit'20148,563,903'Method and circuit for controlling radiant heat of transistor using metal-insulator transition device'20138,536,554'Three-terminal metal-insulator transition switch, switching system including the same, and method of controlling metal-insulator transition of the same'20138,305,221'Programmable MIT sensor using the abrupt MIT device, and alarm apparatus and secondary battery anti-explosion circuit including the MIT sensor'20128,242,875'Thin film type varistor and a method of manufacturing the same'20128,207,750'Circuit for continuously measuring discontinuous metal insulator transition of MIT element and MIT sensor using the same'20128,174,188'Electro-luminescent device including metal-insulator transition layer'20128,031,022'Oscillation circuit including MIT device and method of adjusting oscillation frequency of the oscillation circuit'20118,031,021'Oscillation circuit based on metal-insulator transition device and method of driving the oscillation circuit'20118,017,268'Lithium secondary battery including discharge unit'20118,003,431'Method for antireflection treatment of a zinc oxide film and method for manufacturing solar cell using the same'20117,989,792'Abrupt metal-insulator transition device with parallel MIT material layers'20117,944,360'Temperature sensor using abrupt metal-insulator transition (MIT) and alarm comprising the temperature sensor'20117,911,756'Low-voltage noise preventing circuit using abrupt metal-insulator transition device'20117,791,924'Memory device using abrupt metal-insulator transition and method of operating the same'20107,791,376'Logic circuit using metal-insulator transition (MIT) device'20107,662,683'Method for forming gate dielectric layer'20107,498,053'Inorganic thin film electroluminescent device and method for manufacturing the same'20097,489,492'Abrupt metal-insulator transition device, circuit for removing high-voltage noise using the abrupt metal-insulator transition device, and electrical and/or electronic system comprising the circuit'20096,926,572'Flat panel display device and method of forming passivation film in the flat panel display device'20056,819,043'Electroluminescent device and method of manufacturing the same'20046,730,614'Method of forming a thin film in a semiconductor device'20046,723,642'Method for forming nitrogen-containing oxide thin film using plasma enhanced atomic layer deposition'20046,674,234'Thin film electroluminescent device having thin-film current control layer'20046,447,908'Method for manufacturing phosphor-coated particles and method for forming cathodoluminescent screen using the same for field emission display'20025,500,389'Process for formation for hetero junction structured film utilizing V grooves'1996Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
1996–2016Patents assigned to KOREA ELECTRONICS TELECOMM (28)· patent assignee history
1996–2020Based in Daejeon, KR· patent location history
2004–2005Based in Kumi-shi, KR· patent location history
2004Based in Taejon, KR· patent location history
2012–2014Patents assigned to KIM HYUN-TAK (6)· patent assignee history
2012–2014Patents assigned to YUN SUN-JIN (6)· patent assignee history
2012–2014Patents assigned to KIM BONG-JUN (5)· patent assignee history
2017–2020Patents assigned to ELECTRONICS & TELECOMMUNICATIONS RES INST (8)· patent assignee history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| KOREA ELECTRONICS TELECOMM | 28 | 1996–2016 |
| ELECTRONICS & TELECOMMUNICATIONS RES INST | 8 | 2017–2020 |
| KIM HYUN-TAK | 6 | 2012–2014 |
| YUN SUN-JINself | 6 | 2012–2014 |
| KIM BONG-JUN | 5 | 2012–2014 |
Locations
| Location | Patents | Span |
|---|---|---|
| Daejeon, KR | 32 | 1996–2020 |
| Kumi-shi, KR | 3 | 2004–2005 |
| Taejon, KR | 1 | 2004 |