Inventor

Kazuo Miwada

Inventor

Tokyo, JP

Overview

1985–2003

Patent span

Electricity

Primary field (CPC H)

Patents· 19 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

G11Cprimary

G11CStatic stores36%

H10FInorganic semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation29%

H10DInorganic electric semiconductor devices21%

H04NPictorial communication, e.g. television7%

H03KPulse technique4%

H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h104%

PatentTitleYear

6,618,088'Charge transfer device having three pixel rows arranged adjacently to each other'2003 5,703,640'Color linear image sensor having a reduced distance between photosensor arrays'1997 5,631,702'Color linear image sensor having a reduced distance between photosensor arrays'1997 5,524,036'Charge transfer device having charge injection source for reset drain region'1996 5,309,240'CCD linear image sensor including a CCD shift register on both sides of linearly arranged photosensor cells'1994 5,306,932'Charge transfer device provided with improved output structure'1994 5,287,393'Charge transfer device equipped with charge signal detector improved in sensitivity as well as in voltage amplification'1994 5,276,723'Floating diffusion type charge detection circuit for use in charge transfer device'1994 5,224,134'Charge transfer device having circuit for adjusting the high level of the reset pulse'1993 5,223,725'Charge transfer device equipped with junction type output transistor improved in sensitivity to charge packet'1993 5,220,210'Linear image sensor'1993 5,196,719'Solid-state image pick-up device having electric field for accelerating electric charges from photoelectric converting region to shift register'1993 5,173,757'Charge detection circuit for use in charge transfer device'1992 5,103,278'Charge transfer device achieving a high charge transfer efficiency by forming a potential well gradient under an output-gate area'1992 5,049,960'Charge coupled device free from after image due to residual electric charges'1991 4,993,053'Charge transfer device provided with an improved output stage'1991 4,974,239'Output circuit of a charge transfer device'1990 4,700,085'Circuit for detecting signal charges transferred in a charge transfer device'1987 4,554,675'Charge transfer device operative at high speed'1985

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

1985Patents assigned to NIPPON ELECTRIC CO (1)· patent assignee history

1985–2003Based in Tokyo, JP· patent location history

1987–1997Patents assigned to NEC CORP (17)· patent assignee history

2003Patents assigned to NEC ELECTRONICS CORP (1)· patent assignee history

Inventor activity

Assignee and location history derived from the patent record.

Assignees

Assignee	Patents	Span
NEC CORP	17	1987–1997
NEC ELECTRONICS CORP	1	2003
NIPPON ELECTRIC CO	1	1985

Locations

Location	Patents	Span
Tokyo, JP	19	1985–2003