Inventor
YU-XUAN HUANG
Inventor
TW
Overview
Patents· 56 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Dprimary
H10DInorganic electric semiconductor devices26%
H01LSemiconductor devices22%
B82YSpecific uses or applications of nanostructures20%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1018%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h106%
H10BElectronic memory devices2%
G06FElectric digital data processing2%
G11CStatic stores1%
H10FInorganic semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation1%
Y02PClimate change mitigation technologies in the production or processing of goods1%
PatentTitleYear
12,593,504Transistors with varying width nanosheet202612,568,648Backside source/drain contacts and methods of forming the same202612,519,009Replacement material for backside gate cut feature202612,506,078—202512,471,353Gate-all around transistor with isolating feature under source/drain202512,453,114Semiconductor transistor devices having double-sided interconnect structures202512,446,283Semiconductor device and method for forming the same202512,446,303Stacking CMOS structure202512,432,975Semiconductor device with backside power rail202512,402,376High-voltage nano-sheet transistor202512,389,641Field effect transistor with air spacer and method202512,374,624Semiconductor devices202512,341,103Integrated circuit and method of manufacturing same202512,307,183Variable width nano-sheet field-effect transistor cell structure202512,287,070LED filament light bulb202512,266,657Hybrid cell-based device, layout, and method202512,249,575Integrated circuit structure with backside via202512,243,780Semiconductor device structure and method for forming the same202512,230,572Backside signal interconnection202512,199,030Semiconductor devices including decoupling capacitors202512,191,371Field effect transistor with disabled channels and method202512,183,736Backside PN junction diode202412,148,837Semiconductor devices202412,125,850Buried metal track and methods forming same202412,094,938Semiconductor device with low resistances and methods of forming such202412,080,713Self-aligned etch in semiconductor devices202412,040,403Semiconductor structure with isolating feature202411,996,409Stacking CMOS structure202411,984,402Semiconductor device and method202411,973,075Dual substrate side ESD diode for high speed circuit202411,948,972High-voltage nano-sheet transistor202411,894,260Replacement material for backside gate cut feature202411,855,224Leakage prevention structure and method202311,837,535Semiconductor devices including decoupling capacitors202311,810,917Self-aligned etch in semiconductor devices202311,757,042Semiconductor device and method202311,756,959Structure and method of integrated circuit having decouple capacitance202311,735,587Backside PN junction diode202311,705,488Nano-sheet-based devices with asymmetric source and drain configurations202311,658,119Backside signal interconnection202311,652,043Integrated circuit structure with backside via202311,610,805Replacement material for backside gate cut feature202311,532,627Source/drain contact structure202211,532,556Structure and method for transistors having backside power rails202211,532,715Source/drain contacts for semiconductor devices and methods of forming202211,508,661Integrated circuit and method of manufacturing same202211,450,600Semiconductor devices including decoupling capacitors202211,444,200Semiconductor structure with isolating feature and method for forming the same202211,429,774Variable width nano-sheet field-effect transistor cell structure202211,410,930Semiconductor device and method202211,393,815Transistors with varying width nanosheet202211,342,326Self-aligned etch in semiconductor devices202211,264,508Leakage prevention structure and method202211,251,308Semiconductor device and method202211,227,917Nano-sheet-based devices with asymmetric source and drain configurations202211,158,634Backside PN junction diode2021Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2021–2026Patents assigned to TAIWAN SEMICONDUCTOR MFG CO LTD (55)· patent assignee history
2021–2026Based in TW· patent location history
2025Patents assigned to MUSTAR LIGHTING CORP (1)· patent assignee history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| TAIWAN SEMICONDUCTOR MFG CO LTD | 55 | 2021–2026 |
| MUSTAR LIGHTING CORP | 1 | 2025 |
Locations
| Location | Patents | Span |
|---|---|---|
| TW | 56 | 2021–2026 |