Inventor
Miho Jomen
Inventor
Watervliet, NY, US
Overview
Patents· 6 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Pprimary
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1040%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1040%
C23CCoating metallic material13%
H10DInorganic electric semiconductor devices7%
PatentTitleYear
8,247,030'Void-free copper filling of recessed features using a smooth non-agglomerated copper seed layer'20127,884,012'Void-free copper filling of recessed features for semiconductor devices'20117,846,841'Method for forming cobalt nitride cap layers'20107,799,681'Method for forming a ruthenium metal cap layer'20107,776,740'Method for integrating selective low-temperature ruthenium deposition into copper metallization of a semiconductor device'20107,718,527'Method for forming cobalt tungsten cap layers'2010Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2010–2012Patents assigned to TOKYO ELECTRON LTD (6)· patent assignee history
2010–2011Based in Watervliet, NY, US· patent location history
2010–2012Based in Albany, NY, US· patent location history
2012Patents assigned to GOMI ATSUSHI (1)· patent assignee history
2012Patents assigned to JOMEN MIHO (1)· patent assignee history
2012Patents assigned to SUZUKI KENJI (1)· patent assignee history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| TOKYO ELECTRON LTD | 6 | 2010–2012 |
| GOMI ATSUSHI | 1 | 2012 |
| JOMEN MIHOself | 1 | 2012 |
| SUZUKI KENJI | 1 | 2012 |
Locations
| Location | Patents | Span |
|---|---|---|
| Watervliet, New York, US | 4 | 2010–2011 |
| Albany, New York, US | 2 | 2010–2012 |