Inventor

Fusao Yamanaka

Inventor
Kanagawa, JP

Overview

24→
Patents
1988–2008
Patent span
Physics
Primary field (CPC G)

Patents· 24 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H01Sprimary
H01SDevices using the process of light amplification by stimulated emission of radiation [laser] to amplify or generate light28%
G11BInformation storage based on relative movement between record carrier and transducer19%
G02BOptical elements, systems or apparatus15%
Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests15%
Y10TTechnical subjects covered by former us classification11%
C23CCoating metallic material4%
B82YSpecific uses or applications of nanostructures2%
C25DProcesses for the electrolytic or electrophoretic production of coatings2%
F16BDevices for fastening or securing constructional elements or machine parts together, e.g. nails, bolts, circlips, clamps, clips or wedges2%
G03FPhotomechanical production of textured or patterned surfaces, e.g. for printing, for processing of semiconductor devices2%
PatentTitleYear
7,369,586'Laser module'20087,369,581'Laser module and method of manufacture thereof'20087,339,975'Apparatus for synthesizing laser beams'20087,301,975'Laser module'20077,245,804'Laser device and exposure device using the same'20077,120,177'Laser element, method of producing the laser element, and a laser module employing the laser element'20067,110,425'Laser module and production process thereof'20067,101,094'Laser apparatus having protection member at light-emission end of multimode optical fiber'20067,065,117'Semiconductor laser element having end-facet protection layer which includes unoxidized or unnitrided first sublayer formed on end facet and second sublayer produced by oxidizing or nitriding the surface of the first sublayer'20066,922,288'Laser multiplexing apparatus'20056,888,866'Semiconductor laser device with a current non-injection region near a resonator end face, and fabrication method thereof'20056,798,805'Semiconductor laser device containing controlled interface oxygen at both end facets'20046,678,303'Semiconductor laser device in which end of electric-to-optical conversion layer protrudes outward from shortest current path between end facets of cladding layers'20046,529,537'Semiconductor laser device having controlled oxygen concentration at boundary between semiconductor layers and reflectance control layer formed on end facet'20036,359,921'Semiconductor laser element having resonator surface coated with oxygen gettering layer and high thermal conductivity layer'20025,061,562'Method for preparing a magnetic recording medium and a magnetic disk using the same'19915,049,448'Magnetic recording medium containing an ester lubricant branched from the number 2 carbon position of the acid residue'19914,994,305'Method for producing magnetic recording medium'19914,994,321'Perpendicular magnetic recording medium and the method for preparing the same'19914,869,797'Method for preparing a magnetic recording medium'19894,867,101'Apparatus for producing magnetic recording medium'19894,868,070'Vertical magnetization type recording medium and manufacturing method therefor'19894,865,878'Method of manufacturing vertical magnetization type recording medium'19894,717,592'Vertical magnetization type recording medium and manufacturing method therefor'1988

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

1988–2006Patents assigned to FUJI PHOTO FILM CO LTD (19)· patent assignee history
1988–2008Based in Kanagawa, JP· patent location history
2002–2008Based in Kaisei-machi, JP· patent location history
2007–2008Patents assigned to FUJIFILM CORP (5)· patent assignee history

Inventor activity

Assignee and location history derived from the patent record.

Assignees
AssigneePatentsSpan
FUJI PHOTO FILM CO LTD191988–2006
FUJIFILM CORP52007–2008
Locations
LocationPatentsSpan
Kanagawa, JP141988–2008
Kaisei-machi, JP102002–2008