Inventor
Jonathan D. Reid
Inventor
Sherwood, OR, US
Overview
Patents· 98 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
C25Dprimary
C25DProcesses for the electrolytic or electrophoretic production of coatings31%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1020%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1016%
Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests7%
C23CCoating metallic material6%
H05KPrinted circuits5%
H01LSemiconductor devices4%
C25FProcesses for the electrolytic removal of materials from objects3%
Y10TTechnical subjects covered by former us classification2%
H10DInorganic electric semiconductor devices1%
PatentTitleYear
11,078,591Process for optimizing cobalt electrofill using sacrificial oxidants202110,745,817Configuration and method of operation of an electrodeposition system for improved process stability and performance202010,711,366Removal of electroplating bath additives202010,472,730Electrolyte concentration control system for high rate electroplating201910,443,146Monitoring surface oxide on seed layers during electroplating201910,358,738Gap fill process stability monitoring of an electroplating process using a potential-controlled exit step201910,329,683Process for optimizing cobalt electrofill using sacrificial oxidants201910,023,970Dynamic current distribution control apparatus and method for wafer electroplating201810,006,144Method and apparatus for filling interconnect structures20189,865,501'Method and apparatus for remote plasma treatment for reducing metal oxides on a metal seed layer'20189,822,461'Dynamic current distribution control apparatus and method for wafer electroplating'20179,816,194'Control of electrolyte flow dynamics for uniform electroplating'20179,816,193'Configuration and method of operation of an electrodeposition system for improved process stability and performance'20179,816,196'Method and apparatus for electroplating semiconductor wafer when controlling cations in electrolyte'20179,777,386'Chemistry additives and process for cobalt film electrodeposition'20179,481,942'Geometry and process optimization for ultra-high RPM plating'20169,472,377'Method and apparatus for characterizing metal oxide reduction'20169,385,035'Current ramping and current pulsing entry of substrates for electroplating'20169,309,604'Method and apparatus for electroplating'20169,109,295'Electrolyte concentration control system for high rate electroplating'20159,045,841'Control of electrolyte composition in a copper electroplating apparatus'20159,045,840'Dynamic current distribution control apparatus and method for wafer electroplating'20158,722,539'Process for through silicon via filling'20148,709,948'Tungsten barrier and seed for copper filled TSV'20148,703,615'Copper electroplating process for uniform across wafer deposition and void free filling on ruthenium coated wafers'20148,623,193'Method of electroplating using a high resistance ionic current source'20148,575,028'Method and apparatus for filling interconnect structures'20138,513,124'Copper electroplating process for uniform across wafer deposition and void free filling on semi-noble metal coated wafers'20138,475,636'Method and apparatus for electroplating'20138,475,644'Method and apparatus for electroplating'20138,415,261'Capping before barrier-removal IC fabrication method'20138,377,824'Methods and apparatus for depositing copper on tungsten'20138,308,931'Method and apparatus for electroplating'20128,268,155'Copper electroplating solutions with halides'20128,197,662'Deposit morphology of electroplated copper'20128,172,992'Wafer electroplating apparatus for reducing edge defects'20128,168,540'Methods and apparatus for depositing copper on tungsten'20128,147,660'Semiconductive counter electrode for electrolytic current distribution control'20128,128,791'Control of electrolyte composition in a copper electroplating apparatus'20128,076,241'Methods for multi-step copper plating on a continuous ruthenium film in recessed features'20118,048,280'Process for electroplating metals into microscopic recessed features'20118,043,958'Capping before barrier-removal IC fabrication method'20118,043,967'Process for through silicon via filling'20117,967,969'Method of electroplating using a high resistance ionic current source'20117,964,506'Two step copper electroplating process with anneal for uniform across wafer deposition and void free filling on ruthenium coated wafers'20117,897,198'Electroless layer plating process and apparatus'20117,854,828'Method and apparatus for electroplating including remotely positioned second cathode'20107,811,925'Capping before barrier-removal IC fabrication method'20107,799,684'Two step process for uniform across wafer deposition and void free filling on ruthenium coated wafers'20107,776,741'Process for through silicon via filing'20107,727,863'Sonic irradiation during wafer immersion'20107,686,927'Methods and apparatus for controlled-angle wafer positioning'20107,622,024'High resistance ionic current source'20097,605,082'Capping before barrier-removal IC fabrication method'20097,449,098'Method for planar electroplating'20087,442,267'Anneal of ruthenium seed layer to improve copper plating'20087,341,946'Methods for the electrochemical deposition of copper onto a barrier layer of a work piece'20087,232,513'Electroplating bath containing wetting agent for defect reduction'20077,211,175'Method and apparatus for potential controlled electroplating of fine patterns on semiconductor wafers'20077,097,410'Methods and apparatus for controlled-angle wafer positioning'20067,033,465'Clamshell apparatus with crystal shielding and in-situ rinse-dry'20066,946,065'Process for electroplating metal into microscopic recessed features'20056,890,416'Copper electroplating method and apparatus'20056,884,335'Electroplating using DC current interruption and variable rotation rate'20056,821,407'Anode and anode chamber for copper electroplating'20046,800,187'Clamshell apparatus for electrochemically treating wafers'20046,793,796'Electroplating process for avoiding defects in metal features of integrated circuit devices'20046,773,571'Method and apparatus for uniform electroplating of thin metal seeded wafers using multiple segmented virtual anode sources'20046,755,946'Clamshell apparatus with dynamic uniformity control'20046,716,334'Electroplating process chamber and method with pre-wetting and rinsing capability'20046,664,122'Electroless copper deposition method for preparing copper seed layers'20036,653,226'Method for electrochemical planarization of metal surfaces'20036,569,299'Membrane partition system for plating of wafers'20036,562,204'Apparatus for potential controlled electroplating of fine patterns on semiconductor wafers'20036,554,914'Passivation of copper in dual damascene metalization'20036,551,487'Methods and apparatus for controlled-angle wafer immersion'20036,551,483'Method for potential controlled electroplating of fine patterns on semiconductor wafers'20036,527,920'Copper electroplating apparatus'20036,471,845'Method of controlling chemical bath composition in a manufacturing environment'20026,458,262'Electroplating chemistry on-line monitoring and control system'20026,284,121'Electroplating system including additive for filling sub-micron features'20016,214,193'Electroplating process including pre-wetting and rinsing'20016,193,859'Electric potential shaping apparatus for holding a semiconductor wafer during electroplating'20016,179,983'Method and apparatus for treating surface including virtual anode'20016,162,344'Method of electroplating semiconductor wafer using variable currents and mass transfer to obtain uniform plated layer'20006,159,354'Electric potential shaping method for electroplating'20006,126,798'Electroplating anode including membrane partition system and method of preventing passivation of same'20006,110,346'Method of electroplating semicoductor wafer using variable currents and mass transfer to obtain uniform plated layer'20006,099,702'Electroplating chamber with rotatable wafer holder and pre-wetting and rinsing capability'20006,074,544'Method of electroplating semiconductor wafer using variable currents and mass transfer to obtain uniform plated layer'20006,024,857'Electroplating additive for filling sub-micron features'20005,766,499'Method of making a circuitized substrate'19985,731,547'Circuitized substrate with material containment means and method of making same'19985,421,507'Au-Sn transient liquid bonding in high performance laminates'19955,280,414'Au-Sn transient liquid bonding in high performance laminates'19945,153,986'Method for fabricating metal core layers for a multi-layer circuit board'19924,969,979'Direct electroplating of through holes'19904,904,350'Submersible contact cell-electroplating films'1990Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
1990–2003Patents assigned to IBM (12)· patent assignee history
1990–1998Based in Johnson City, NY, US· patent location history
2000–2020Patents assigned to NOVELLUS SYSTEMS INC (81)· patent assignee history
2000–2021Based in Sherwood, OR, US· patent location history
2012–2017Patents assigned to REID JONATHAN D (13)· patent assignee history
2012–2015Patents assigned to MAYER STEVEN T (9)· patent assignee history
2016–2021Patents assigned to LAM RES CORP (10)· patent assignee history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| NOVELLUS SYSTEMS INC | 81 | 2000–2020 |
| REID JONATHAN Dself | 13 | 2012–2017 |
| IBM | 12 | 1990–2003 |
| LAM RES CORP | 10 | 2016–2021 |
| MAYER STEVEN T | 9 | 2012–2015 |
Locations
| Location | Patents | Span |
|---|---|---|
| Sherwood, OR, US | 91 | 2000–2021 |
| Johnson City, New York, US | 7 | 1990–1998 |