Inventor
Tetsufumi Tanamoto
Inventor
Kawasaki, JP
Overview
Patents· 50 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
G06Fprimary
G06FElectric digital data processing15%
G11CStatic stores13%
H10DInorganic electric semiconductor devices13%
B82YSpecific uses or applications of nanostructures10%
H03KPulse technique9%
H04LTransmission of digital information, e.g. telegraphic communication8%
H10BElectronic memory devices7%
H10NElectric solid-state devices not otherwise provided for7%
H01LSemiconductor devices6%
G06NComputing arrangements based on specific computational models2%
PatentTitleYear
10,942,705Quantum annealing apparatus202110,853,721Multiplier accumulator, network unit, and network apparatus202010,496,546Cache memory and processor system201910,459,692Random number generator201910,298,407Data generation apparatus, electronic device, and authentication system201910,218,518Authentication server, authentication system, and authentication method20199,983,818Individual identification device, storage device, individual identification system, method of individual identification, and program product20189,852,281Authentication system, authentication device, and authentication method20179,794,073'Information processing system and semiconductor device'20179,712,166'Data generating device and authentication system'20179,570,137'Magnetic memory and semiconductor-integrated-circuit'20179,547,475'Random number generating circuit'20179,536,583'Magnetic memory, spin element, and spin MOS transistor'20179,520,171'Resistive change memory'20169,460,316'Authentication device, authentication method, and computer program product'20169,424,927'Memory system, control system and method of predicting lifetime'20169,230,625'Magnetic memory, spin element, and spin MOS transistor'20169,171,888'Magnetic memory device and driving method for the same'20159,112,139'Spin transistor and memory'20158,981,436'Stacked structure, spin transistor, and reconfigurable logic circuit'20158,874,631'Random number generation apparatus'20148,856,199'Random number generator circuit and cryptographic circuit'20148,681,033'Analog-to-digital converter including differential pair circuit'20148,681,034'Analog-to-digital converter for dividing reference voltage using plural variable resistors'20148,611,143'Memory circuit using spin MOSFETs, path transistor circuit with memory function, switching box circuit, switching block circuit, and field programmable gate array'20138,610,196'Memory including transistors with double floating gate structures'20138,578,318'Method for implementing circuit design for integrated circuit and computer readable medium'20138,553,464'Nonvolatile programmable logic switch'20138,405,443'Pass transistor circuit with memory function, and switching box circuit including the pass transistor circuit'20138,385,114'Nonvolatile memory circuit using spin MOS transistors'20138,373,437'Look-up table circuits and field programmable gate array'20138,330,160'Random number generating device'20128,294,489'Programmable logic circuit'20128,154,916'Nonvolatile memory circuit using spin MOS transistors'20127,949,984'Method and apparatus for designing a three-dimensional integrated circuit'20117,917,560'Random number test circuit'20117,796,423'Reconfigurable logic circuit'20107,653,855'Random number test circuit, random number generation circuit, semiconductor integrated circuit, IC card and information terminal device'20107,629,609'Random number generating device'20097,558,813'Random number generating device'20097,405,423'Random number generating device'20087,001,787'Electrode manufacturing method'20066,800,837'Method for quantum information processing and quantum information processor'20046,333,516'Quantum effect device'20016,208,000'Semiconductor element having charge accumulating layer under gate electrode and using single electron phenomenon'20016,060,743'Semiconductor memory device having multilayer group IV nanocrystal quantum dot floating gate and method of manufacturing the same'20005,877,511'Single-electron controlling magnetoresistance element'19995,844,279'Single-electron semiconductor device'19985,710,436'Quantum effect device'19985,670,790'Electronic device'1997Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
1997–2021Based in Kawasaki, JP· patent location history
1998–2021Patents assigned to TOSHIBA KK (48)· patent assignee history
2006–2019Based in Kanagawa, JP· patent location history
2010–2011Based in Yokohama, JP· patent location history
2012–2015Patents assigned to TANAMOTO TETSUFUMI (15)· patent assignee history
2012–2015Patents assigned to SAITO YOSHIAKI (9)· patent assignee history
2012–2015Patents assigned to INOKUCHI TOMOAKI (8)· patent assignee history
2012–2015Patents assigned to MARUKAME TAKAO (8)· patent assignee history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| TOSHIBA KK | 48 | 1998–2021 |
| TANAMOTO TETSUFUMIself | 15 | 2012–2015 |
| SAITO YOSHIAKI | 9 | 2012–2015 |
| INOKUCHI TOMOAKI | 8 | 2012–2015 |
| MARUKAME TAKAO | 8 | 2012–2015 |
Locations
| Location | Patents | Span |
|---|---|---|
| Kawasaki, JP | 37 | 1997–2021 |
| Kanagawa, JP | 11 | 2006–2019 |
| Yokohama, JP | 2 | 2010–2011 |