Inventor
HUNG-WEN SU
Inventor
TW
Overview
Patents· 32 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H01Lprimary
H01LSemiconductor devices30%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1030%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1019%
H10DInorganic electric semiconductor devices11%
A61FFilters implantable into blood vessels2%
A61MDevices for introducing media into, or onto, the body2%
B82YSpecific uses or applications of nanostructures2%
C23CCoating metallic material2%
H01JElectric discharge tubes or discharge lamps2%
C25DProcesses for the electrolytic or electrophoretic production of coatings1%
PatentTitleYear
12,581,925Selective metal cap in an interconnect structure202612,557,629Interconnect structure and methods of forming the same202612,469,745Conductive structures with bottom-less barriers and liners202512,334,397Interconnect structure including graphite and method forming same202512,322,649Interconnect structure of semiconductor device202512,315,809Via for semiconductor device and method202512,237,261Semiconductor device having a contact structure202512,166,128Multi-layer film device and method202412,165,975Method of forming interconnect structure having a barrier layer202412,159,837Chemical direct pattern plating method202412,159,838Method of forming an interconnect structure having an air gap and structure thereof202412,094,770Ruthenium-based liner for a copper interconnect202412,080,594Thermally stable copper-alloy adhesion layer for metal interconnect structures and methods for forming the same202411,996,361Method of making a contact structure202411,908,697Interconnect structure having a carbon-containing barrier layer202411,851,749Semiconductor device, method and machine of manufacture202311,830,742Selective capping processes and structures formed thereby202311,810,857Via for semiconductor device and method202311,777,035Multi-layer film device and method202311,742,290Interconnect structure and method of forming thereof202311,682,624Method of forming an interconnect structure having an air gap and structure thereof202311,676,898Diffusion barrier for semiconductor device and method202311,652,044Contact structure and method of making202311,552,018Chemical direct pattern plating method202311,535,950Electro-plating and apparatus for performing the same202211,527,411Interconnect structure having a carbon-containing barrier layer202211,527,476Interconnect structure of semiconductor device202211,430,692Thermally stable copper-alloy adhesion layer for metal interconnect structures and methods for forming the same202211,380,542Selective capping processes and structures formed thereby202211,374,127Multi-layer film device and method202211,345,991Semiconductor device, method and machine of manufacture202211,177,168Device and method for reducing contact resistance of a metal2021Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2021–2026Patents assigned to TAIWAN SEMICONDUCTOR MFG CO LTD (32)· patent assignee history
2021–2026Based in TW· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| TAIWAN SEMICONDUCTOR MFG CO LTD | 32 | 2021–2026 |
Locations
| Location | Patents | Span |
|---|---|---|
| TW | 32 | 2021–2026 |