Inventor
YUAN-YANG HSIAO
Inventor
TW
Overview
Patents· 25 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H01Lprimary
H01LSemiconductor devices30%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1030%
H10DInorganic electric semiconductor devices24%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h108%
H10BElectronic memory devices6%
H01GCapacitors3%
PatentTitleYear
12,575,118Semiconductor device and manufacturing method thereof202612,557,655Passive device structure stress reduction202612,477,756Metal-insulator-metal structure and methods of fabrication thereof202512,444,674Back-end-of-line passive device structure202512,417,973Semiconductor packaging structure and method for manufacturing the same202512,368,094Semiconductor structures and methods of forming the same202512,327,785High voltage passive device structure202512,300,640Semiconductor device and method of manufacturing thereof202512,266,592Through vias of semiconductor structure and method of forming thereof202512,230,566Metal-insulator-metal structure202512,218,186Back-end-of-line passive device structure having common connection to ground202512,107,041Metal plate corner structure on metal insulator metal202412,087,714Reduction of cracks in passivation layer202412,080,753Device structure with a redistribution layer and a buffer layer202411,990,401Back-end-of-line passive device structure202411,961,880Metal-insulator-metal structure202411,923,405Metal-insulator-metal structure and methods of fabrication thereof202411,842,959Metal-Insulator-Metal structure202311,728,262Metal plate corner structure on metal insulator metal202311,728,375Metal-insulator-metal (MIM) capacitor structure202311,728,295Semiconductor device and method of manufacturing thereof202311,715,756Device structure and methods of forming the same202311,705,384Through vias of semiconductor structure and method of forming thereof202311,362,170Metal-insulator-metal (MIM) capacitor structure and method for forming the same202211,342,408Metal-insulator-metal structure and methods of fabrication thereof2022Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2022–2026Patents assigned to TAIWAN SEMICONDUCTOR MFG CO LTD (25)· patent assignee history
2022–2026Based in TW· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| TAIWAN SEMICONDUCTOR MFG CO LTD | 25 | 2022–2026 |
Locations
| Location | Patents | Span |
|---|---|---|
| TW | 25 | 2022–2026 |