Inventor
Thierry Coffi Herve Yao
Inventor
Portland, OR, US
Overview
Patents· 31 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Bprimary
H10BElectronic memory devices19%
H10DInorganic electric semiconductor devices18%
H01LSemiconductor devices16%
G11CStatic stores15%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1010%
H10NElectric solid-state devices not otherwise provided for6%
B82YSpecific uses or applications of nanostructures5%
H10KOrganic electric solid-state devices5%
Y10TTechnical subjects covered by former us classification5%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h102%
PatentTitleYear
10,505,053Electronic device including a tunnel structure201910,490,549Isolation structure for semiconductor device having self-biasing buried layer and method therefor201910,304,843Method of manufacturing and operating a non-volatile memory cell201910,224,323Isolation structure for semiconductor device having self-biasing buried layer and method therefor201910,181,569Two-terminal switching devices comprising coated nanotube elements201910,153,213Process of forming an electronic device including a drift region, a sinker region and a resurf region201810,043,899Laterally diffused MOSFET for embedded memory applications20189,923,092'Method of forming a semiconductor device'20189,755,170'Resistive materials comprising mixed nanoscopic particles and carbon nanotubes'20179,741,726'Non-volatile memory cell and method of manufacture'20179,478,607'Electronic device including an isolation structure'20169,356,158'Electronic device including a tunnel structure'20169,337,423'Two-terminal switching device using a composite material of nanoscopic particles and carbon nanotubes'20169,245,952'Method of forming a semiconductor device and structure therefor'20169,236,125'Process of forming an electronic device including a nonvolatile memory cell'20169,048,237'Electronic device including a nonvolatile memory structure having an antifuse component'20158,969,142'Switching materials comprising mixed nanoscopic particles and carbon nanotubes and methods of making and using the same'20158,921,175'Process of forming an electronic device including a nonvolatile memory cell'20148,896,050'Electronic device including a tunnel structure'20148,803,282'Electronic device including a nonvolatile memory structure having an antifuse component'20148,741,697'Electronic device including a nonvolatile memory structure having an antifuse component and a process of forming the same'20148,724,364'Electronic device including a nonvolatile memory structure having an antifuse component and a process of using the same'20148,669,604'Electronic device including a nonvolatile memory cell'20148,586,424'Switching materials comprising mixed nanoscopic particles and carbon nanotubes and method of making and using the same'20138,530,283'Process for forming an electronic device including a nonvolatile memory structure having an antifuse component'20138,409,944'Process of forming an electronic device including a nonvolatile memory cell having a floating gate electrode or a conductive member with different portions'20138,399,918'Electronic device including a tunnel structure'20138,394,700'Device including memory array and method thereof'20138,279,681'Method of using a nonvolatile memory cell'20127,915,637'Switching materials comprising mixed nanoscopic particles and carbon nanotubes and method of making and using the same'20117,102,188'High reliability electrically erasable and programmable read-only memory (EEPROM)'2006Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2006Based in Oudenaarde, BE· patent location history
2011–2019Patents assigned to NANTERO INC (6)· patent assignee history
2011–2019Based in Lake Oswego, OR, US· patent location history
2012–2016Patents assigned to SEMICONDUCTOR COMPONENTS IND (15)· patent assignee history
2012–2016Patents assigned to YAO THIERRY COFFI HERVE (12)· patent assignee history
2012–2016Patents assigned to SCOTT GREGORY JAMES (8)· patent assignee history
2012–2019Based in Portland, OR, US· patent location history
2016–2019Patents assigned to SEMICONDUCTOR COMPONENTS IND LLC (9)· patent assignee history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| SEMICONDUCTOR COMPONENTS IND | 15 | 2012–2016 |
| YAO THIERRY COFFI HERVEself | 12 | 2012–2016 |
| SEMICONDUCTOR COMPONENTS IND LLC | 9 | 2016–2019 |
| SCOTT GREGORY JAMES | 8 | 2012–2016 |
| NANTERO INC | 6 | 2011–2019 |
Locations
| Location | Patents | Span |
|---|---|---|
| Portland, OR, US | 26 | 2012–2019 |
| Lake Oswego, OR, US | 4 | 2011–2019 |
| Oudenaarde, BE | 1 | 2006 |