LexDanaLexDanabeta
Inventor

Douglas J. Tweet

Inventor
Camas, WA, US

Overview

82→
Patents
2001–2020
Patent span
Electricity
Primary field (CPC H)

Patents· 82 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H10Pprimary
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1019%
H10FInorganic semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation16%
H10DInorganic electric semiconductor devices14%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h109%
Y02EReduction of greenhouse gas [ghg] emissions, related to energy generation, transmission or distribution9%
Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests8%
B82YSpecific uses or applications of nanostructures3%
Y02PClimate change mitigation technologies in the production or processing of goods3%
C30BSingle-crystal growth3%
F24SSolar heat collectors2%
PatentTitleYear
10,608,134Solar power system using hybrid trough and photovoltaic two-stage light concentration202010,505,496Asymmetric tracking-integrated optics for solar concentration20199,787,247'Solar concentrator with asymmetric tracking-integrated optics'20179,773,934'Hybrid Trough solar power system using photovoltaic two-stage light concentration'20179,348,068'Energy generating transparent film'20169,091,812'Energy-efficient transparent solar film'20159,063,353'Air stable, color tunable plasmonic structures for ultraviolet (UV) and visible wavelength applications'20158,896,907'Plasmonic reflective display fabricated using anodized aluminum oxide'20148,767,282'Plasmonic in-cell polarizer'20148,106,426'Full color CMOS imager filter'20127,999,995'Full color range interferometric modulation'20117,935,617'Method to stabilize carbon in Si1-x-yGexCy layers'20117,915,652'Integrated infrared and color CMOS imager sensor'20117,906,825'Ge imager for short wavelength infrared'20117,816,170'Dual-pixel full color CMOS imager with large capacity well'20107,811,913'Method of fabricating a low, dark-current germanium-on-silicon pin photo detector'20107,800,148'CMOS active pixel sensor'20107,786,469'Thermal sensor with a silicon/germanium superlattice structure'20107,675,056'Germanium phototransistor with floating body'20107,651,883'High energy implant photodiode stack'20107,651,880'Ge short wavelength infrared imager'20107,608,874'Fully isolated photodiode stack'20097,598,108'Gallium nitride-on-silicon interface using multiple aluminum compound buffer layers'20097,470,573'Method of making CMOS devices on strained silicon on glass'20087,459,375'Transfer method for forming a silicon-on-plastic wafer'20087,442,599'Silicon/germanium superlattice thermal sensor'20087,419,844'Real-time CMOS imager having stacked photodiodes fabricated on SOI wafer'20087,413,939'Method of growing a germanium epitaxial film on insulator for use in fabrication of CMOS integrated circuit'20087,405,098'Smooth surface liquid phase epitaxial germanium'20087,390,725'Strained silicon on insulator from film transfer and relaxation by hydrogen implantation'20087,384,837'Method for isolating silicon germanium dislocation regions in strained-silicon CMOS applications'20087,364,989'Strain control of epitaxial oxide films using virtual substrates'20087,361,526'Germanium photo detector having planar surface through germanium epitaxial overgrowth'20087,361,528'Germanium infrared sensor for CMOS imagers'20087,361,574'Single-crystal silicon-on-glass from film transfer'20087,358,107'Method of fabricating a germanium photo detector on a high quality germanium epitaxial overgrowth layer'20087,351,995'Floating body germanium phototransistor having a photo absorption threshold bias region'20087,323,349'Self-aligned cross point resistor memory array'20087,297,564'Fabrication of vertical sidewalls on (110) silicon substrates for use in Si/SiGe photodetectors'20077,279,400'Method of fabricating single-layer and multi-layer single crystalline silicon and silicon devices on plastic using sacrificial glass'20077,276,392'Floating body germanium phototransistor with photo absorption threshold bias region'20077,271,023'Floating body germanium phototransistor'20077,265,030'Method of fabricating silicon on glass via layer transfer'20077,247,545'Fabrication of a low defect germanium film by direct wafer bonding'20077,241,670'Method to form relaxed SiGe layer with high Ge content using co-implantation of silicon with boron or helium and hydrogen'20077,226,504'Method to form thick relaxed SiGe layer with trench structure'20077,186,611'High-density germanium-on-insulator photodiode array'20077,157,300'Fabrication of thin film germanium infrared sensor by bonding to silicon wafer'20077,138,309'Integration of biaxial tensile strained NMOS and uniaxial compressive strained PMOS on the same wafer'20067,129,488'Surface-normal optical path structure for infrared photodetection'20067,115,945'Strained silicon fin structure'20067,071,042'Method of fabricating silicon integrated circuit on glass'20067,067,430'Method of making relaxed silicon-germanium on insulator via layer transfer with stress reduction'20067,045,832'Vertical optical path structure for infrared photodetection'20067,045,401'Strained silicon finFET device'20067,037,856'Method of fabricating a low-defect strained epitaxial germanium film on silicon'20067,030,002'Low temperature anneal to reduce defects in hydrogen-implanted, relaxed SiGe layer'20067,018,882'Method to form local “silicon-on-nothing” or “silicon-on-insulator” wafers with tensile-strained silicon'20067,008,813'Epitaxial growth of germanium photodetector for CMOS imagers'20066,992,025'Strained silicon on insulator from film transfer and relaxation by hydrogen implantation'20066,967,112'Three-dimensional quantum dot structure for infrared photodetection'20056,903,384'System and method for isolating silicon germanium dislocation regions in strained-silicon CMOS applications'20056,852,652'Method of making relaxed silicon-germanium on glass via layer transfer'20056,793,731'Method for recrystallizing an amorphized silicon germanium film overlying silicon'20046,780,796'Method of forming relaxed SiGe layer'20046,767,802'Methods of making relaxed silicon-germanium on insulator via layer transfer'20046,759,695'Integrated circuit metal oxide semiconductor transistor'20046,746,902'Method to form relaxed sige layer with high ge content'20046,720,258'Method of fabricating a nickel silicide on a substrate'20046,716,691'Self-aligned shallow trench isolation process having improved polysilicon gate thickness control'20046,703,293'Implantation at elevated temperatures for amorphization re-crystallization of Si1-xGex films on silicon substrates'20046,699,764'Method for amorphization re-crystallization of Si1-xGex films on silicon substrates'20046,627,510'Method of making self-aligned shallow trench isolation'20036,627,919'Thermally stable nickel germanosilicide formed on SiGe'20036,620,664'Silicon-germanium MOSFET with deposited gate dielectric and metal gate electrode and method for making the same'20036,583,000'Process integration of Si1-xGex CMOS with Si1-xGex relaxation after STI formation'20036,562,703'Molecular hydrogen implantation method for forming a relaxed silicon germanium layer with high germanium content'20036,555,874'Method of fabricating high performance SiGe heterojunction bipolar transistor BiCMOS on a silicon-on-insulator substrate'20036,534,871'Device including an epitaxial nickel silicide on (100) Si or stable nickel silicide on amorphous Si and a method of fabricating the same'20036,506,637'Method to form thermally stable nickel germanosilicide on SiGe'20036,200,866'Use of silicon germanium and other alloys as the replacement gate for the fabrication of MOSFET'20016,194,310'Method of forming amorphous conducting diffusion barriers'2001

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

2001–2016Patents assigned to SHARP LAB OF AMERICA INC (78)· patent assignee history
2001–2020Based in Camas, WA, US· patent location history
2012–2014Patents assigned to TWEET DOUGLAS J (3)· patent assignee history
2014–2015Patents assigned to HASHIMURA AKINORI (3)· patent assignee history
2017Patents assigned to SHARP LABORATORIES AMERICA INC (2)· patent assignee history
2017Patents assigned to SHARP LABORATORIES OF AMERICA (SLA) INC (2)· patent assignee history

Inventor activity

Assignee and location history derived from the patent record.

Assignees
AssigneePatentsSpan
SHARP LAB OF AMERICA INC782001–2016
HASHIMURA AKINORI32014–2015
TWEET DOUGLAS Jself32012–2014
SHARP LABORATORIES AMERICA INC22017
SHARP LABORATORIES OF AMERICA (SLA) INC22017
Locations
LocationPatentsSpan
Camas, Washington, US822001–2020