Inventor
CHI-CHUNG JEN
Inventor
TW
Overview
Patents· 35 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H01Lprimary
H01LSemiconductor devices29%
H10BElectronic memory devices25%
H10DInorganic electric semiconductor devices25%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h109%
G11CStatic stores6%
H10FInorganic semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation4%
B25JManipulators2%
H05FStatic electricity2%
PatentTitleYear
12,543,348Transistor and method for manufacturing the same202612,532,678Method for manufacturing semiconductor structure and semiconductor structure thereof202612,402,362Flash memory device with three-dimensional half structure and methods for forming the same202512,317,545Memory device and manufacturing method thereof202512,308,271Semiconductor wafer processing system and method202512,272,756Semiconductor device202512,261,228Semiconductor device202512,261,188Image sensor device and methods of forming the same202512,249,657Semiconductor device202512,218,253Flash memory device with three dimensional half flash structure and methods for forming the same202512,199,159Flash memory device including a buried floating gate and a buried erase gate and methods of forming the same202512,191,338Image sensor device and methods of forming the same202512,148,808Memory device202412,113,135Transistor and method for manufacturing the same202412,051,755Transistor and method for manufacturing the same202411,901,207Semiconductor wafer processing system and method202411,903,193Two dimensional structure to control flash operation and methods for forming the same202411,888,074Flash memory device with three-dimensional half flash structure and methods for forming the same202411,830,918Memory device202311,804,529Memory device and manufacturing method thereof202311,792,981Two dimensional structure to control flash operation and methods for forming the same202311,769,837Semiconductor device202311,728,399Flash memory device including a buried floating gate and a buried erase gate and methods of forming the same202311,682,736Semiconductor device202311,658,248Flash memory device with three-dimensional half flash structure and methods for forming the same202311,652,127Image sensor device and methods of forming the same202311,594,645Transistor and method for manufacturing the same202311,563,127Semiconductor device202311,502,123Methods for forming image sensor devices202211,387,124Wafer container and method for holding wafer202211,362,185Memory device and method for manufacturing the same202211,282,931Memory device and manufacturing method thereof202211,257,963Semiconductor device202211,195,841Integrated circuit and method for manufacturing the same202111,183,572Flash memory device including a buried floating gate and a buried erase gate and methods of forming the same2021Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2021–2026Patents assigned to TAIWAN SEMICONDUCTOR MFG CO LTD (35)· patent assignee history
2021–2026Based in TW· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| TAIWAN SEMICONDUCTOR MFG CO LTD | 35 | 2021–2026 |
Locations
| Location | Patents | Span |
|---|---|---|
| TW | 35 | 2021–2026 |