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Inventor

GuoHao Cao

Inventor
Shanghai, CN

Overview

3→
Patents
2016–2017
Patent span
Electricity
Primary field (CPC H)

Patents· 3 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

H01Lprimary
H01LSemiconductor devices30%
H10DInorganic electric semiconductor devices30%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1030%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1010%
PatentTitleYear
9,653,600'Semiconductor device and method of fabricating same'20179,536,742'Lateral double-diffused MOSFET and fabrication method thereof'20179,287,397'Semiconductor device and method of fabricating same'2016

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

2016Patents assigned to SEMICONDUCTOR MFG INT CORP (1)· patent assignee history
2016Patents assigned to SEMICONDUCTOR MFG INT SHANGHAI (1)· patent assignee history
2016–2017Based in Shanghai, CN· patent location history
2017Patents assigned to SEMICONDUCTOR MFG INT SHANGHAI CORP (2)· patent assignee history

Inventor activity

Assignee and location history derived from the patent record.

Assignees
AssigneePatentsSpan
SEMICONDUCTOR MFG INT SHANGHAI CORP22017
SEMICONDUCTOR MFG INT CORP12016
SEMICONDUCTOR MFG INT SHANGHAI12016
Locations
LocationPatentsSpan
Shanghai, CN32016–2017