Inventor
Woong Lim Choi
Inventor
Chungcheongbuk-do, KR
Overview
Patents· 27 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
G11Cprimary
G11CStatic stores48%
H10BElectronic memory devices23%
H10DInorganic electric semiconductor devices11%
G06FElectric digital data processing7%
G06NComputing arrangements based on specific computational models2%
H03MCoding2%
H04LTransmission of digital information, e.g. telegraphic communication2%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h102%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h102%
PatentTitleYear
10,811,117Method for SRAM yield estimation202010,528,640Bi-directional FIFO memory and convolution processing device using the same20209,779,787'Systems and methods for processing data'20179,466,359'Static random access memory and driving method thereof'20167,928,504'Semiconductor memory device and method for manufacturing the same'20116,788,573'Non-volatile semiconductor memory and method of operating the same'20046,566,197'Method for fabricating connection structure between segment transistor and memory cell region of flash memory device'20036,411,547'Nonvolatile memory cell and method for programming and/or verifying the same'20026,335,243'Method of fabricating nonvolatile memory device'20026,212,100'Nonvolatile memory cell and method for programming and/or verifying the same'20016,198,661'Sensing circuit for semiconductor device and sensing method using the same'20016,146,943'Method for fabricating nonvolatile memory device'20006,121,072'Method of fabricating nonvolatile memory device'20006,097,639'System and method for programming nonvolatile memory'20006,069,821'Device for sensing data in a multi-bit memory cell using a multistep current source'20006,034,892'Nonvolatile memory cell and method for programming and/or verifying the same'20005,998,829'Non-volatile memory device incorporating a dual channel structure'19995,943,259'Data sensing device and method for multibit memory cell'19995,936,889'Array of nonvolatile memory device and method for fabricating the same'19995,905,674'Nonvolatile memory and method of programming the same'19995,892,714'Method of programming and/or verifying a threshold voltage level of a nonvolatile memory cell'19995,859,454'Nonvolatile memory device'19995,801,993'Nonvolatile memory device'19985,790,454'Data sensing apparatus and method of multi-bit memory cell'19985,751,632'Device for and method of sensing data of multi-bit memory cell'19985,745,412'Programmable nonvolatile memory and method of programming the same'19985,566,111'Method for programming a nonvolatile memory'1996Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
1996–2002Patents assigned to LG SEMICON CO LTD (15)· patent assignee history
1996–1999Based in Kyungki-do, KR· patent location history
1998–2004Based in Chungcheongbuk-do, KR· patent location history
1998Based in Yongin-si, KR· patent location history
1999–2002Based in Cheongju-si, KR· patent location history
2000–2002Patents assigned to HYUNDAI ELECTRONICS IND (5)· patent assignee history
2003–2011Patents assigned to HYNIX SEMICONDUCTOR INC (2)· patent assignee history
2016–2020Patents assigned to UNIV KOREA RES & BUS FOUND (4)· patent assignee history
2016–2020Based in Bucheon-si, KR· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| LG SEMICON CO LTD | 15 | 1996–2002 |
| HYUNDAI ELECTRONICS IND | 5 | 2000–2002 |
| UNIV KOREA RES & BUS FOUND | 4 | 2016–2020 |
| HYNIX SEMICONDUCTOR INC | 2 | 2003–2011 |
Locations
| Location | Patents | Span |
|---|---|---|
| Chungcheongbuk-do, KR | 15 | 1998–2004 |
| Bucheon-si, KR | 4 | 2016–2020 |
| Cheongju-si, KR | 2 | 1999–2002 |
| Kyungki-do, KR | 2 | 1996–1999 |
| Yongin-si, KR | 2 | 1998 |