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Inventor

Ming Xi

Inventor
Milpitas, CA, US

Overview

74→
Patents
1998–2019
Patent span
Electricity
Primary field (CPC H)

Patents· 74 as inventor

Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.

C23Cprimary
C23CCoating metallic material27%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1026%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1019%
C30BSingle-crystal growth6%
H01JElectric discharge tubes or discharge lamps5%
H01LSemiconductor devices3%
H10DInorganic electric semiconductor devices3%
B05DProcesses for applying fluent materials to surfaces, in general1%
B08BCleaning in general1%
Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests1%
PatentTitleYear
10,230,018Substrate used for III-V-nitride growth and manufacturing method thereof201910,121,682Purging of porogen from UV cure chamber201810,020,197Method for reducing porogen accumulation from a UV-cure chamber20189,832,493Method and apparatus for processing audio/video file20179,384,959'Purging of porogen from UV cure chamber'20169,073,100'Method and apparatuses for reducing porogen accumulation from a UV-cure chamber'20159,031,685'Atomic layer deposition apparatus'20159,012,334'Formation of a tantalum-nitride layer'20158,734,663'Purging of porogen from UV cure chamber'20148,626,330'Atomic layer deposition apparatus'20148,518,210'Purging of porogen from UV cure chamber'20138,282,768'Purging of porogen from UV cure chamber'20128,123,860'Apparatus for cyclical depositing of thin films'20128,114,789'Formation of a tantalum-nitride layer'20128,027,746'Atomic layer deposition apparatus'20117,867,914'System and method for forming an integrated barrier layer'20117,860,597'Atomic layer deposition apparatus'20107,779,784'Apparatus and method for plasma assisted deposition'20107,781,326'Formation of a tantalum-nitride layer'20107,745,333'Methods for depositing tungsten layers employing atomic layer deposition techniques'20107,732,325'Plasma-enhanced cyclic layer deposition process for barrier layers'20107,709,385'Method for depositing tungsten-containing layers by vapor deposition techniques'20107,695,563'Pulsed deposition process for tungsten nucleation'20107,674,715'Method for forming tungsten materials during vapor deposition processes'20107,660,644'Atomic layer deposition apparatus'20107,605,083'Formation of composite tungsten films'20097,473,638'Plasma-enhanced cyclic layer deposition process for barrier layers'20097,465,665'Method for depositing tungsten-containing layers by vapor deposition techniques'20087,465,666'Method for forming tungsten materials during vapor deposition processes'20087,405,158'Methods for depositing tungsten layers employing atomic layer deposition techniques'20087,396,565'Multiple precursor cyclical deposition system'20087,384,867'Formation of composite tungsten films'20087,279,432'System and method for forming an integrated barrier layer'20077,235,486'Method for forming tungsten materials during vapor deposition processes'20077,223,323'Multi-chemistry plating system'20077,220,673'Method for depositing tungsten-containing layers by vapor deposition techniques'20077,211,144'Pulsed nucleation deposition of tungsten layers'20077,201,803'Valve control system for atomic layer deposition chamber'20077,175,713'Apparatus for cyclical deposition of thin films'20077,115,494'Method and system for controlling the presence of fluorine in refractory metal layers'20067,101,795'Method and apparatus for depositing refractory metal layers employing sequential deposition techniques to form a nucleation layer'20067,094,685'Integration of titanium and titanium nitride layers'20067,094,680'Formation of a tantalum-nitride layer'20067,085,616'Atomic layer deposition apparatus'20067,033,922'Method and system for controlling the presence of fluorine in refractory metal layers'20067,026,238'Reliability barrier integration for Cu application'20066,998,014'Apparatus and method for plasma assisted deposition'20066,951,804'Formation of a tantalum-nitride layer'20056,939,804'Formation of composite tungsten films'20056,911,391'Integration of titanium and titanium nitride layers'20056,866,746'Clamshell and small volume chamber with fixed substrate support'20056,846,516'Multiple precursor cyclical deposition system'20056,809,026'Selective deposition of a barrier layer on a metal film'20046,797,340'Method for depositing refractory metal layers employing sequential deposition techniques'20046,734,020'Valve control system for atomic layer deposition chamber'20046,720,027'Cyclical deposition of a variable content titanium silicon nitride layer'20046,660,126'Lid assembly for a processing system to facilitate sequential deposition techniques'20036,624,064'Chamber seasoning method to improve adhesion of F-containing dielectric film to metal for VLSI application'20036,555,183'Plasma treatment of a titanium nitride film formed by chemical vapor deposition'20036,551,929'Bifurcated deposition process for depositing refractory metal layers employing atomic layer deposition and chemical vapor deposition techniques'20036,548,402'Method of depositing a thick titanium nitride film'20036,436,820'Method for the CVD deposition of a low residual halogen content multi-layered titanium nitride film having a combined thickness greater than 1000 '20026,365,495'Method for performing metallo-organic chemical vapor deposition of titanium nitride at reduced temperature'20026,326,690'Method of titanium/titanium nitride integration'20016,323,119'CVD deposition method to improve adhesion of F-containing dielectric metal lines for VLSI application'20016,299,692'Head for vaporizing and flowing various precursor materials onto semiconductor wafers during chemical vapor deposition'20016,221,174'Method of performing titanium/titanium nitride integration'20016,218,301'Deposition of tungsten films from W(CO)6'20016,214,714'Method of titanium/titanium nitride integration'20016,211,065'Method of depositing and amorphous fluorocarbon film using HDP-CVD'20016,066,836'High temperature resistive heater for a process chamber'20005,926,743'Process for chlorine trifluoride chamber cleaning'19995,849,092'Process for chlorine trifluoride chamber cleaning'19985,837,058'High temperature susceptor'1998

Career & activity timeline

Assembled from patent assignee/location history and declaration credentials.

1998–2015Patents assigned to APPLIED MATERIALS INC (65)· patent assignee history
1998–2000Based in Santa Clara, CA, US· patent location history
2001–2015Based in Milpitas, CA, US· patent location history
2001–2015Based in Sunnyvale, CA, US· patent location history
2004–2018Based in Palo Alto, CA, US· patent location history
2012–2018Patents assigned to NOVELLUS SYSTEMS INC (7)· patent assignee history
2012–2015Patents assigned to XI MING (6)· patent assignee history
2012–2013Patents assigned to KAMIAN GEORGE D (2)· patent assignee history
2012–2013Patents assigned to LAU STEPHEN YU-HONG (2)· patent assignee history
2019Based in Shanghai, CN· patent location history

Inventor activity

Assignee and location history derived from the patent record.

Assignees
AssigneePatentsSpan
APPLIED MATERIALS INC651998–2015
NOVELLUS SYSTEMS INC72012–2018
XI MINGself62012–2015
KAMIAN GEORGE D22012–2013
LAU STEPHEN YU-HONG22012–2013
Locations
LocationPatentsSpan
Milpitas, California, US312001–2015
Palo Alto, California, US302004–2018
Sunnyvale, California, US62001–2015
Santa Clara, California, US41998–2000
Shanghai, CN12019