Inventor
Taichiroo Konno
Inventor
Hitachi, JP
Overview
Patents· 25 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Hprimary
H10HInorganic light-emitting semiconductor devices having potential barriers45%
H10DInorganic electric semiconductor devices14%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1014%
H01LSemiconductor devices12%
C30BSingle-crystal growth10%
C23CCoating metallic material4%
PatentTitleYear
10,418,241Metal chloride gas generator, hydride vapor phase epitaxy growth apparatus, and nitride semiconductor template201910,060,047Nitride semiconductor crystal producing method including growing nitride semiconductor crystal over seed crystal substrate20189,397,232'Nitride semiconductor epitaxial substrate and nitride semiconductor device'20169,359,692'Metal chloride gas generator, hydride vapor phase epitaxy growth apparatus, and method for fabricating a nitride semiconductor template'20169,236,252'Metal chloride gas generator, hydride vapor phase epitaxy growth apparatus, and nitride semiconductor template'20169,105,755'Method of manufacturing a nitride semiconductor epitaxial substrate'20158,829,489'Nitride semiconductor template and light-emitting diode'20148,796,711'Light-emitting element'20148,786,052'Nitride semiconductor crystal producing method, nitride semiconductor epitaxial wafer, and nitride semiconductor freestanding substrate'20148,664,663'Nitride semiconductor template and light-emitting diode including oxygen-doped layer and silicon-doped layer formed on the oxygen-doped layer'20148,350,277'Light emitting element'20138,258,529'Light-emitting element and method of making the same'20128,212,268'Epitaxial wafer, light-emitting element, method of fabricating epitaxial wafer and method of fabricating light-emitting element'20128,120,050'Light-emitting element'20127,723,731'Semiconductor light emitting device'20107,692,203'Semiconductor light emitting device'20107,675,072'Light emitting diode'20107,652,281'Light emitting diode'20107,608,859'Semiconductor light-emitting device with transparent conductive film'20097,569,866'Semiconductor light-emitting device'20097,564,071'Semiconductor light emitting device'20097,535,026'Semiconductor light-emitting device with high brightness and low operating voltage'20097,449,722'Semiconductor light emitting element'20087,368,759'Semiconductor light-emitting device'20087,230,281'Semiconductor light emitting device'2007Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2007–2016Patents assigned to HITACHI CABLE (18)· patent assignee history
2007–2009Based in Tsuchiura, JP· patent location history
2009–2019Based in Hitachi, JP· patent location history
2010Based in Tokyo, JP· patent location history
2012–2016Patents assigned to KONNO TAICHIROO (9)· patent assignee history
2014–2016Patents assigned to HITACHI METALS LTD (5)· patent assignee history
2014–2016Patents assigned to FUJIKURA HAJIME (4)· patent assignee history
2016–2019Patents assigned to SUMITOMO CHEMICAL CO (4)· patent assignee history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| HITACHI CABLE | 18 | 2007–2016 |
| KONNO TAICHIROOself | 9 | 2012–2016 |
| HITACHI METALS LTD | 5 | 2014–2016 |
| FUJIKURA HAJIME | 4 | 2014–2016 |
| SUMITOMO CHEMICAL CO | 4 | 2016–2019 |
Locations
| Location | Patents | Span |
|---|---|---|
| Hitachi, JP | 18 | 2009–2019 |
| Tsuchiura, JP | 6 | 2007–2009 |
| Tokyo, JP | 1 | 2010 |