Inventor
Nawoto Motegi
Inventor
Kanagawa, JP
Overview
Patents· 8 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H01Sprimary
H01SDevices using the process of light amplification by stimulated emission of radiation [laser] to amplify or generate light55%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1018%
H10DInorganic electric semiconductor devices9%
H10FInorganic semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation9%
H10HInorganic light-emitting semiconductor devices having potential barriers9%
PatentTitleYear
5,150,191'P-type II-VI compound semiconductor doped'19925,065,404'Transverse-mode oscillation semiconductor laser device'19914,974,233'Semiconductor laser device'19904,858,241'Semiconductor laser device'19894,691,321'Semiconductor laser device having current confining and built-in waveguide structure'19874,647,953'Semiconductor laser device and method for manufacturing the same'19874,640,737'Dry etching method of compound semiconductor'19874,635,268'Semiconductor laser device having a double heterojunction structure'1987Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
1987–1992Patents assigned to TOSHIBA KK (7)· patent assignee history
1987Patents assigned to TOKYO SHIBAURA ELECTRIC CO (1)· patent assignee history
1987–1992Based in Kanagawa, JP· patent location history
1991Based in Miura, JP· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| TOSHIBA KK | 7 | 1987–1992 |
| TOKYO SHIBAURA ELECTRIC CO | 1 | 1987 |
Locations
| Location | Patents | Span |
|---|---|---|
| Kanagawa, JP | 7 | 1987–1992 |
| Miura, JP | 1 | 1991 |