Inventor
Naohiro Shimada
Inventor
Tokyo, JP
Overview
Patents· 24 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H04Lprimary
H04LTransmission of digital information, e.g. telegraphic communication28%
H04JMultiplex communication25%
H01SDevices using the process of light amplification by stimulated emission of radiation [laser] to amplify or generate light15%
H04QSelecting13%
H04MTelephonic communication8%
LOC268%
B82YSpecific uses or applications of nanostructures3%
Y10STechnical subjects covered by former uspc cross-reference art collections [xracs] and digests3%
PatentTitleYear
7,672,237'Node capable of saving a third-layer operation'20107,664,874'Node capable of saving a third-layer operation'20106,957,271'Node capable of saving a third layer packet handling operation in a synchronous optical network'20056,804,268'Method and apparatus for multi-access transmission'20046,690,649'QoS management apparatus'2004D0485376'Light emitting device'20046,647,014'Distributed network node'20036,557,112'QOS protection system'20036,483,809'High speed transfer of failure information in an ATM network'2002D0456534'Light emitting device'2002D0454966'Light emitting device'20026,292,502'Multiple quantum well semiconductor laser diode and DVD system using the same'20016,247,051'High speed transfer of failure information in an ATM network'20016,144,642'Signal transfer device in a telecommunications network'20006,101,167'Path switching system'20005,511,077'Frame transmission system'19965,434,858'Virtual tributary path idle insertion using timeslot interchange'19955,289,487'Semiconductor laser device having uniform and reproducible laser characteristics'19945,187,704'Monitoring method for stand-by circuits suitable for a multiplexing/demultiplexing apparatus'19935,157,682'Integrated semiconductor laser device'19924,982,409'Semiconductor laser device'19914,949,339'Multiplexer apparatus adaptable for two kinds of transmission rates'19904,799,228'Transverse-mode stabilized semiconductor laser diode with slab-coupled waveguide'19894,691,321'Semiconductor laser device having current confining and built-in waveguide structure'1987Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
1987–2004Patents assigned to TOSHIBA KK (9)· patent assignee history
1987Based in Yokohama, JP· patent location history
1989Based in Yokahama, JP· patent location history
1990–2010Patents assigned to NEC CORP (15)· patent assignee history
1990–2010Based in Tokyo, JP· patent location history
1991–1994Based in Kawasaki, JP· patent location history
2001–2004Based in Yokosuka, JP· patent location history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| NEC CORP | 15 | 1990–2010 |
| TOSHIBA KK | 9 | 1987–2004 |
Locations
| Location | Patents | Span |
|---|---|---|
| Tokyo, JP | 15 | 1990–2010 |
| Yokosuka, JP | 4 | 2001–2004 |
| Kawasaki, JP | 3 | 1991–1994 |
| Yokahama, JP | 1 | 1989 |
| Yokohama, JP | 1 | 1987 |