Inventor
CHING-HUNG KAO
Inventor
TW
Overview
Patents· 29 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Dprimary
H10DInorganic electric semiconductor devices31%
H01LSemiconductor devices30%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h1022%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h107%
H10BElectronic memory devices5%
H10FInorganic semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation4%
H01JElectric discharge tubes or discharge lamps1%
PatentTitleYear
12,538,826Semiconductor device and method of manufacturing the same202612,464,787Circuit structure and method for reducing electronic noises202512,464,735Metal insulator metal capacitor structure having high capacitance202512,457,816Wide channel semiconductor device202512,374,638Passivation structure for metal pattern202512,369,376Method of manufacturing a semiconductor device and a semiconductor device202512,362,184Semiconductor devices and methods of manufacturing thereof202512,354,959Redistribution layer features202512,288,801Semiconductor structure and method of manufacture202512,274,054Flash memory layout to eliminate floating gate bridge202512,266,684High density capacitor202512,165,997Semiconductor device and method of manufacturing the same202412,107,148Semiconductor devices and methods of manufacturing thereof202412,068,364Metal insulator metal capacitor structure having high capacitance202412,063,776Flash memory layout to eliminate floating gate bridge202412,057,504Minimization of silicon germanium facets in planar metal oxide semiconductor structures202412,020,940Semiconductor devices and methods of manufacturing thereof202411,948,939Profile control of gate structures in semiconductor devices202411,901,305Method for fabricating semiconductor structure having alignment mark feature202411,784,198Wide channel semiconductor device202311,682,549Semiconductor wafer with modified surface and fabrication method thereof202311,670,594Redistribution layer features202311,605,709Circuit structure and method for reducing electronic noises202311,502,161Metal insulator metal capacitor structure having high capacitance202211,488,872Method for forming semiconductor device structure with isolation feature202211,380,721Wide channel gate structure202211,362,039Semiconductor structure and fabricating method thereof202211,342,455Minimization of silicon germanium facets in planar metal oxide semiconductor structures202211,201,082Deep trench isolation structure in semiconductor device2021Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2021–2026Patents assigned to TAIWAN SEMICONDUCTOR MFG CO LTD (29)· patent assignee history
2021–2026Based in TW· patent location history
2025Patents assigned to TAIWAN SEMICONDCUTOR MFG COMPANY LTD (1)· patent assignee history
2025Patents assigned to TAIWAN SEMICONDUCTOR MANUFACTUING COMPANY LTD (1)· patent assignee history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| TAIWAN SEMICONDUCTOR MFG CO LTD | 29 | 2021–2026 |
| TAIWAN SEMICONDCUTOR MFG COMPANY LTD | 1 | 2025 |
| TAIWAN SEMICONDUCTOR MANUFACTUING COMPANY LTD | 1 | 2025 |
Locations
| Location | Patents | Span |
|---|---|---|
| TW | 29 | 2021–2026 |