Inventor
Makoto Furuno
Inventor
Atsugi, JP
Overview
Patents· 43 as inventor
Public. Assignee & technology derived from the patent record. Each patent links to its LexDana page.
H10Dprimary
H10DInorganic electric semiconductor devices26%
H10PGeneric processes or apparatus for the manufacture or treatment of devices covered by class h1016%
C23CCoating metallic material9%
H10BElectronic memory devices8%
H10WGeneric packages, interconnections, connectors or other constructional details of devices covered by class h105%
G02FOptical devices or arrangements for the control of light by modification of the optical properties of the media of the elements involved therein5%
H01LSemiconductor devices5%
Y02EReduction of greenhouse gas [ghg] emissions, related to energy generation, transmission or distribution5%
G11CStatic stores4%
H01MProcesses or means, e.g. batteries, for the direct conversion of chemical energy into electrical energy3%
PatentTitleYear
10,529,556Deposition method and method for manufacturing semiconductor device20209,698,008'Deposition method and method for manufacturing semiconductor device'20179,044,793'Method for cleaning film formation apparatus and method for manufacturing semiconductor device'20159,006,046'Deposition method and method for manufacturing semiconductor device'20158,987,068'Method for manufacturing display device'20158,846,530'Method for forming semiconductor region and method for manufacturing power storage device'20148,729,620'Nonvolatile semiconductor memory device'20148,643,182'Semiconductor film, method for manufacturing the same, and power storage device'20148,629,442'Display device'20148,592,908'Semiconductor substrate and manufacturing method of semiconductor device'20138,518,761'Deposition method and method for manufacturing semiconductor device'20138,455,044'Semiconductor film, method for manufacturing the same, and power storage device'20138,395,158'Thin film transistor having microcrystalline semiconductor layer'20138,309,406'Method for manufacturing semiconductor device'20128,310,474'Display device'20128,263,421'Manufacturing method of semiconductor device'20128,247,307'Manufacturing method of substrate provided with semiconductor films'20128,247,315'Plasma processing apparatus and method for manufacturing semiconductor device'20128,242,562'Film deposition apparatus'20128,227,863'Nonvolatile semiconductor memory device'20128,212,302'Nonvolatile semiconductor memory device'20128,198,629'Photoelectric conversion device and method for manufacturing the same'20128,101,467'Liquid crystal display device and method for manufacturing the same, and liquid crystal television receiver'20128,101,444'Method for manufacturing semiconductor device'20128,030,147'Method for manufacturing thin film transistor and display device including the thin film transistor'20118,022,460'Nonvolatile semiconductor memory device'20118,017,946'Thin film transistor having microcrystalline semiconductor layer and amorphous semiconductor layer'20117,989,273'Semiconductor substrate and manufacturing method of semiconductor device'20117,947,544'Method of manufacturing semiconductor device, film deposition method, and film deposition apparatus'20117,888,167'Photoelectric conversion device and method for manufacturing the same'20117,842,992'Nonvolatile semiconductor memory device having floating gate that includes two layers'20107,833,845'Manufacturing method of semiconductor device'20107,786,526'Nonvolatile semiconductor memory device'20107,709,843'Display device and method for manufacturing the same, and television receiver'20107,692,232'Nonvolatile semiconductor memory device'20107,638,408'Manufacturing method of substrate provided with semiconductor films'20097,611,930'Method of manufacturing display device'20097,572,688'Method for manufacturing semiconductor device'20097,511,709'Display device'20097,477,216'Display device and electronic apparatus'20097,229,862'Method for manufacturing semiconductor device'20077,211,454'Manufacturing method of a light emitting device including moving the source of the vapor deposition parallel to the substrate'20076,306,183'Method of forming manufacturing semiconductor device'2001Career & activity timeline
Assembled from patent assignee/location history and declaration credentials.
2001Based in Tokyo, JP· patent location history
2007–2020Patents assigned to SEMICONDUCTOR ENERGY LAB (41)· patent assignee history
2007–2014Based in Atsugi, JP· patent location history
2007–2020Based in Kanagawa, JP· patent location history
2012–2014Patents assigned to FURUNO MAKOTO (18)· patent assignee history
2012–2014Patents assigned to YAMAZAKI SHUNPEI (16)· patent assignee history
2012–2014Patents assigned to ASAMI YOSHINOBU (3)· patent assignee history
2012–2014Patents assigned to IMAI KEITARO (3)· patent assignee history
Inventor activity
Assignee and location history derived from the patent record.
Assignees
| Assignee | Patents | Span |
|---|---|---|
| SEMICONDUCTOR ENERGY LAB | 41 | 2007–2020 |
| FURUNO MAKOTOself | 18 | 2012–2014 |
| YAMAZAKI SHUNPEI | 16 | 2012–2014 |
| ASAMI YOSHINOBU | 3 | 2012–2014 |
| IMAI KEITARO | 3 | 2012–2014 |
Locations
| Location | Patents | Span |
|---|---|---|
| Atsugi, JP | 23 | 2007–2014 |
| Kanagawa, JP | 19 | 2007–2020 |
| Tokyo, JP | 1 | 2001 |